IPB065N06L G OptiMOS™ Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS(on),max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB065N06L G Type IPP065N06L G Package Marking IPB063N06L G Package P-TO263-3-2 PG-TO263-3-2 063N06L PG-TO220-3-1 IPP063N06L G Marking PP-TO220-3-1 065N06L 063N06L 065N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 80 T C=100 °C 80 Pulsed drain current I D,pulse T C=25 °C2) 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 530 Reverse diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 A mJ kV/µs ±20 V 250 W -55 ... 175 °C 55/175/56 1) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 125 A. 2) See figure 3 Rev. 1.5 Unit page 1 2010-01-18 IPB065N06L G Parameter IPP065N06L G Values Symbol Conditions Unit min. typ. max. - - 0.6 minimal footprint - - 62 6 cm2 cooling area3) - - 40 60 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=180 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=60 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A - 5.4 6.5 mΩ V GS=4.5 V, I D=53 A - 6.5 8.4 V GS=10 V, I D=80 A, SMD version 5.1 6.2 V GS=4.5 V, I D=53 A, SMD version 6.2 8.1 - 2.2 - Ω 63 126 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.5 page 2 2010-01-18 IPB065N06L G Parameter IPP065N06L G Values Symbol Conditions Unit min. typ. max. - 3800 5100 - 890 1200 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 220 330 Turn-on delay time t d(on) - 11 17 Rise time tr - 21 32 Turn-off delay time t d(off) - 60 90 Fall time tf - 20 30 Gate to source charge Q gs - 13 18 Gate charge at threshold Q g(th) - 6 8 Gate to drain charge Q gd - 42 63 Switching charge Q sw - 49 72 Gate charge total Qg - 118 157 Gate plateau voltage V plateau - 3.5 - Output charge Q oss - 35 47 - - 80 - - 320 - 0.95 1.3 V - 60 76 ns - 92 115 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=4.5V, I D=80 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=30 V, I D=80 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) Rev. 1.5 T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition page 3 2010-01-18 IPB065N06L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 300 IPP065N06L G 100 250 75 I D [A] P tot [W] 200 150 50 100 25 50 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs limited by on-state resistance 10 µs 100 µs 102 0.5 1 ms Z thJC [K/W] DC I D [A] 10 ms 10 1 0.2 10 -1 0.1 0.05 0.02 100 0.01 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.5 single pulse 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-01-18 IPB065N06L G IPP065N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 300 10 V 5.5 V 20 5.5 V 3V 250 3.5 V 4V 16 4.5 V R DS(on) [mΩ] I D [A] 200 150 4V 12 8 4.5 V 5V 100 5.5 V 10 V 3.5 V 4 50 3V 0 0 0 0 1 2 3 4 0 5 50 V DS [V] 100 150 200 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 180 150 150 120 120 g fs [S] I D [A] 90 90 60 60 30 30 175 °C 25 °C 0 0 0 1 2 3 4 5 Rev. 1.5 0 20 40 I D [A] V GS [V] page 5 2010-01-18 IPB065N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPP065N06L G parameter: I D 16 2.5 2 12 V GS(th) [V] R DS(on) [mΩ] 1800 µA 98 % 8 1.5 180 µA 1 typ 4 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 25 °C I F [A] C [pF] 102 Coss 103 175°C 98% 175 °C 25°C 98% 101 100 Crss 102 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.5 0 0.5 1 1.5 2 V SD [V] page 6 2010-01-18 IPB065N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=80 A pulsed parameter: T j(start) parameter: V DD 102 IPP065N06L G 12 25 °C 100 °C 30 V 10 12V 150 °C 48 V V GS [V] I AV [A] 8 101 6 4 2 100 0 100 101 102 103 0 40 t AV [µs] 80 120 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 74 V GS Qg 70 V BR(DSS) [V] 66 62 V g s(th) 58 54 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.5 page 7 2010-01-18 IPB065N06L G IPP065N06L G PG-TO-263 (D²-Pak) Rev. 1.5 page 8 2010-01-18 IPB065N06L G IPP065N06L G PG-TO220-3: Outline Rev. 1.5 page 9 2010-01-18 IPB065N06L G IPP065N06L G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 page 10 2010-01-18