MCNIX MX29LV640BUTC-12 64m-bit [4m x 16] cmos equal sector flash memory Datasheet

MX29LV640BU
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
• 4,194,304 x 16 byte structure
• One hundred twenty-eight Equal Sectors with 32K
word each
- Any combination of sectors can be erased with erase
suspend/resume function
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to program or erase within the sector again.
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pinout and software compatible to single power supply Flash
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data# polling & Toggle bits provide detection of program and erase operation completion
PERFORMANCE
• High Performance
- Access time: 90/120ns
- Program time: 11us/word, 45s/chip (typical)
- Erase time: 0.9s/sector, 45s/chip (typical)
• Low Power Consumption
- Low active read current: 9mA (typical) at 5MHz
- Low standby current: 0.2uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-year data retention
PACKAGE
• 48-pin TSOP
• 63-ball CSP
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• ACC input pin
- Provides accelerated program capability
• WP# pin
- At VIL, allows protection of first sector, regardless of
sector protection/unprotected status
- At VIH, allows removal of protection
GENERAL DESCRIPTION
The standard MX29LV640BU offers access time as fast
as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,
the MX29LV640BU has separate chip enable (CE#) and
output enable (OE#) controls.
The MX29LV640BU is a 64-mega bit Flash memory organized as 4M bytes of 16 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV640BU is
packaged in 48-pin TSOP and 63-ball CSP. It is designed
to be reprogrammed and erased in system or in standard
EPROM programmers.
MXIC's Flash memories augment EPROM functionality
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MX29LV640BU
with in-circuit electrical erasure and programming. The
MX29LV640BU uses a command register to manage this
functionality.
controlled internally within the device.
AUTOMATIC SECTOR ERASE
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and program
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and programming operations produces reliable
cycling. The MX29LV640BU uses a 2.7V to 3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The MX29LV640BU is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase.
The timing and verification of electrical erase are controlled internally within the device.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using standard microprocessor write timings. The device will automatically preprogram and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the
status of the programming operation.
AUTOMATIC PROGRAMMING
The MX29LV640BU is word programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need
to have time out sequence nor to verify the data programmed. The typical chip programming time at room
temperature of the MX29LV640BU is less than 48 seconds.
Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# .
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times
the programming pulse width, provides the program verification, and counts the number of sequences. A status
bit similar to DATA# polling and a status bit toggling between consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV640BU electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The words are programmed by using
the EPROM programming mechanism of hot electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 45 seconds. The Automatic Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
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MX29LV640BU
PIN CONFIGURATION
48 TSOP
A15
A14
A13
A12
A11
A10
A9
A8
A21
A20
WE#
RESET#
ACC
WP#
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
V I/O
GND
Q15
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE#
GND
CE#
A0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
MX29LV640BU
63 Ball CSP (Top View, Ball Down)
12.0 mm
8
NC
NC
7
NC
NC
A13
A12
A14
A15
A16
V I/O
Q15
GND
6
A9
A8
A10
A11
Q7
Q14
Q13
Q6
5
WE
RESET
A21
A19
Q5
Q12
VCC
Q4
NC*
NC*
NC*
NC*
11.0 mm
4
RY/BY
ACC
A18
A20
Q2
Q10
Q11
Q3
3
A7
A17
A6
A5
Q0
Q8
Q9
Q1
A3
A4
A2
A1
A0
CE
OE
GND
2
NC*
1
NC*
NC*
A
B
C
D
E
F
G
H
J
K
NC*
NC*
NC*
NC*
L
M
* Ball are shorted together via the substrate but not connected to the die.
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MX29LV640BU
PIN DESCRIPTION
SYMBOL
A0~A21
Q0~Q15
CE#
WE#
OE#
RESET#
WP#
RY/BY#
PIN NAME
Address Input
8 Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Hardware Reset Pin, Active Low
Hardware Write Protect Input
Read/Busy Output
VCC
ACC
GND
NC
V I/O
+3.0V single power supply
Hardware Acceleration Pin
Device Ground
Pin Not Connected Internally
Input/Output buffer (2.7V~3.6V) this
input should be tied directly to VCC
LOGIC SYMBOL
22
16
A0-A21
Q0-Q15
CE#
OE#
WE#
RESET#
WP#
RY/BY#
V I/O
ACC
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MX29LV640BU
BLOCK DIAGRAM
CE#
OE#
WE#
RESET#
WP#
ACC
WRITE
CONTROL
LOGIC
STATE
HIGH VOLTAGE
MACHINE
(WSM)
LATCH
BUFFER
STATE
MX29LV640BU
FLASH
REGISTER
ARRAY
ARRAY
Y-DECODER
AND
X-DECODER
ADDRESS
A0-A21
PROGRAM/ERASE
INPUT
Y-PASS GATE
SOURCE
HV
COMMAND
DATA
DECODER
SENSE
AMPLIFIER
PGM
DATA
HV
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q15
I/O BUFFER
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MX29LV640BU
SECTOR (GROUP) STRUCTURE
Sector
A21
A20
A19
A18
A17
A16
A15
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
16-bit Address Range
(in hexadecimal)
000000-007FFF
008000-00FFFF
010000-017FFF
018000-01FFFF
020000-027FFF
028000-02FFFF
030000-037FFF
038000-03FFFF
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
040000-047FFF
048000-04FFFF
050000-057FFF
058000-05FFFF
060000-067FFF
068000-06FFFF
070000-077FFF
078000-07FFFF
080000-087FFF
088000-08FFFF
090000-097FFF
098000-09FFFF
0A0000-0A7FFF
0A8000-0AFFFF
0B0000-0B7FFF
0B8000-0BFFFF
0C0000-0C7FFF
0C8000-0CFFFF
0D0000-0D7FFF
0D8000-0DFFFF
0E0000-0E7FFF
0E8000-0EFFFF
0F0000-0F7FFF
0F8000-0FFFFF
100000-10FFFF
108000-10FFFF
110000-117FFF
118000-11FFFF
120000-127FFF
128000-12FFFF
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MX29LV640BU
Sector
A21
A20
A19
A18
A17
A16
A15
SA38
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
16-bit Address Range
(in hexadecimal)
130000-137FFF
138000-13FFFF
140000-147FFF
148000-14FFFF
150000-157FFF
158000-15FFFF
160000-167FFF
168000-16FFFF
170000-177FFF
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
SA71
SA72
SA73
SA74
SA75
SA76
SA77
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
178000-17FFFF
180000-187FFF
188000-18FFFF
190000-197FFF
198000-19FFFF
1A0000-1A7FFF
1A8000-1AFFFF
1B0000-1B7FFF
1B8000-1BFFFF
1C0000-1C7FFF
1C8000-1CFFFF
1D0000-1D7FFF
1D8000-1DFFFF
1E0000-1E7FFF
1E8000-1EFFFF
1F0000-1F7FFF
1F8000-1FFFFF
200000-207FFF
208000-20FFFF
210000-217FFF
218000-21FFFF
220000-227FFF
228000-22FFFF
230000-237FFF
238000-23FFFF
240000-247FFF
248000-24FFFF
250000-257FFF
258000-25FFFF
260000-267FFF
268000-26FFFF
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MX29LV640BU
Sector
A21
A20
A19
A18
A17
A16
A15
SA78
SA79
SA80
SA81
SA82
SA83
SA84
SA85
SA86
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
16-bit Address Range
(in hexadecimal)
270000-277FFF
278000-27FFFF
280000-287FFF
288000-28FFFF
290000-297FFF
298000-29FFFF
2A0000-2A7FFF
2A8000-2AFFFF
2B0000-2B7FFF
SA87
SA88
SA89
SA90
SA91
SA92
SA93
SA94
SA95
SA96
SA97
SA98
SA99
SA100
SA101
SA102
SA103
SA104
SA105
SA106
SA107
SA108
SA109
SA110
SA111
SA112
SA113
SA114
SA115
SA116
SA117
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
2B8000-2BFFFF
2C0000-2C7FFF
2C8000-2CFFFF
2D0000-2D7FFF
2D8000-2DFFFF
2E0000-2E7FFF
2E8000-2EFFFF
2F0000-2F7FFF
2F8000-2FFFFF
300000-307FFF
308000-30FFFF
310000-317FFF
318000-31FFFF
320000-327FFF
328000-32FFFF
330000-337FFF
338000-33FFFF
340000-347FFF
348000-34FFFF
350000-357FFF
358000-35FFFF
360000-367FFF
368000-36FFFF
370000-377FFF
378000-37FFFF
380000-387FFF
388000-38FFFF
390000-397FFF
398000-39FFFF
3A0000-3A7FFF
3A8000-3AFFFF
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MX29LV640BU
Sector
A21
A20
A19
A18
A17
A16
A15
SA118
SA119
SA120
SA121
SA122
SA123
SA124
SA125
SA126
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
16-bit Address Range
(in hexadecimal)
3B0000-3B7FFF
3B8000-3BFFFF
3C0000-3C7FFF
3C8000-3CFFFF
3D0000-3D7FFF
3D8000-3DFFFF
3E0000-3E7FFF
3E8000-3EFFFF
3F0000-3F7FFF
SA127
1
1
1
1
1
1
1
3F8000-3FFFFF
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MX29LV640BU
Sector Group Protection/Unprotected Address Table
Sector Group
A21-A17
SA0-SA3
00000
SA4-SA7
00001
SA8-SA11
00010
SA12-SA15
00011
SA16-SA19
00100
SA20-SA23
00101
SA24-SA27
00110
SA28-SA31
00111
SA32-SA35
01000
SA36-SA39
01001
SA40-SA43
01010
SA44-SA47
01011
SA48-SA51
01100
SA52-SA55
01101
SA56-SA59
01110
SA60-SA63
01111
SA64-SA65
10000
SA66-SA69
10001
SA70-SA73
10010
SA74-SA79
10011
SA80-SA83
10100
SA84-SA87
10101
SA88-SA91
10110
SA92-SA95
10111
SA96-SA99
11000
SA100-SA103
11001
SA104-SA107
11010
SA108-SA111
11011
SA112-SA115
11100
SA116-SA119
11101
SA120-SA123
11110
SA124-SA127
11111
Note: All sector groups are 128K words in size.
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MX29LV640BU
Table 1. BUS OPERATION (1)
Operation
CE#
OE#
Read
L
L
H
Write (Program/Erase)
L
H
Accelerated Program
L
VCC±
Standby
WE# RESET#
WP#
ACC
Address (Note 2)
Q15~Q0
H
X
X
AIN
DOUT
L
H
(Note 2)
X
AIN
(Note 3)
H
L
H
(Note 2)
V HH
AIN
(Note 3)
X
X
VCC±
X
H
X
High-Z
0.3V
0.3V
Output Disable
L
H
H
H
X
X
X
High-Z
Reset
X
X
X
L
X
X
X
High-Z
Sector Group Protect
L
H
L
VID
H
X
Sector Addresses,
(Note 3)
(Note 1)
Chip
A6=L, A1=H, A0=L
L
H
L
VID
H
X
Unprotect (Note 1)
Temporary Sector Group
Sector Addresses,
(Note 3)
A6=H, A1=H, A0=L
X
X
X
VID
H
X
AIN
(Note 3)
Unprotect
Legend:
L=Logic LOW=VIL,H=Logic High=VIH,VID=12.0±0.5V, X=Don't Care, AIN=Address IN, DIN=Data IN, DOUT=Data OUT
Notes:
1. The sector group protect and chip unprotect functions may also be implemented via programming equipment. See
the "Sector Group Protection and Chip Unprotect" section.
2. If WP#=VIL, the first sector remains protected. If WP#=VIH, the first sector will be protected or unprotected as
determined by the method described in "Sector Group Protection and Unprotect". All sectors are unprotected when
shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered).
3. DIN or DOUT as required by command sequence, Data# polling or sector protect algorithm (see Figure 14).
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MX29LV640BU
Table 2. AUTOMATIC SELECT CODES (High Voltage Method)
Operation
CE# OE# WE# A0 A1
A5
A6
A8
to
to
A2
A7
A9
A14 A15
to
Q0~Q15
to
A10 A21
Read
Manufactures Code
L
L
H
L
L
X
L
X
VID
X
X
C2H
Silicon
Device Code
L
L
H
H
L
X
L
X
VID
X
X
22D7H
L
L
H
L
H
X
L
X
VID
X
SA
Code(1)
ID
Sector Protect Verify
Secured Silicon Sector
Indicator Bit(Q7)
xx98h
L
L
H
H
H
X
L
X
VID
X
X
with WP# Protects
xx18h
highest Address Sector
(non-factory locked)
Secured Silicon Sector
Indicator Bit(Q7)
(factory locked)
xx88h
L
L
H
H
H
with WP# Protects
X
L
X
VID
X
X
(factory locked)
xx08h
lowest Address Sector
(non-factory locked)
Notes:
1.code=xx00h means unprotected, or code=xx01h means protected, SA=Sector Address, X=Don't care.
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MX29LV640BU
REQUIREMENTS FOR READING ARRAY
DATA
ACCELERATED PROGRAM OPERATION
The device offers accelerated program operations through
the ACC function. This is one of two functions provided
by the ACC pin. This function is primarily intended to
allow faster manufacturing throughput at the factory.
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should remain at VIH.
If the system asserts VHH on this pin, the device automatically enters the aforementioned accelerated program
mode, temporarily unprotects any protected sectors, and
uses the higher voltage on the pin to reduce the time
required for program operations. Removing VHH from the
ACC pin must not be at VHH for operations other than
accelerated programming, or device damage may result.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device data outputs. The device remains enabled for read
access until the command register contents are altered.
STANDBY MODE
MX29LV640BU can be set into Standby mode with two
different approaches. One is using both CE# and RESET# pins and the other one is using RESET# pin only.
WRITE COMMANDS/COMMAND SEQUENCES
To program data to the device or erase sectors of memory
, the system must drive WE# and CE# to VIL, and OE#
to VIH.
When using both pins of CE# and RESET#, a CMOS
Standby mode is achieved with both pins held at Vcc ±
0.3V. Under this condition, the current consumed is less
than 0.2uA (typ.). If both of the CE# and RESET# are
held at VIH, but not within the range of VCC ± 0.3V, the
device will still be in the standby mode, but the standby
current will be larger. During Auto Algorithm operation,
Vcc active current (Icc2) is required even CE# = "H"
until the operation is completed. The device can be read
with standard access time (tCE) from either of these
standby modes.
An erase operation can erase one sector, multiple sectors , or the entire device. Table indicates the address
space that each sector occupies. A "sector address"
consists of the address bits required to uniquely select a
sector. The "Writing specific address and data commands
or sequences into the command register initiates device
operations. Table 1 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data". Section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.
When using only RESET#, a CMOS standby mode is
achieved with RESET# input held at Vss ± 0.3V, Under
this condition the current is consumed less than 1uA (typ.).
Once the RESET# pin is taken high, the device is back
to active without recovery delay.
After the system writes the Automatic Select command
sequence, the device enters the Automatic Select mode.
The system can then read Automatic Select codes from
the internal register (which is separate from the memory
array) on Q7-Q0. Standard read cycle timings apply in
this mode. Refer to the Automatic Select Mode and Automatic Select Command Sequence section for more information.
In the standby mode the outputs are in the high impedance state, independent of the OE# input.
MX29LV640BU is capable to provide the Automatic
Standby Mode to restrain power consumption during readout of data. This mode can be used effectively with an
application requested low power consumption such as
handy terminals.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC
Characteristics" section contains timing specification table
and timing diagrams for write operations.
To active this mode, MX29LV640BU automatically switch
themselves to low power mode when MX29LV640BU addresses remain stable during access time of tACC+30ns.
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MX29LV640BU
internal reset operation is complete, which requires a time
of tREADY. The system can thus monitor RY/BY# to
determine whether the reset operation is complete. If
RESET# is asserted when a program or erase operation
is completed within a time of tREADY. The system can
read data tRH after the RESET# pin returns to VIH.
It is not necessary to control CE#, WE#, and OE# on the
mode. Under the mode, the current consumed is typically 0.2uA (CMOS level).
AUTOMATIC SLEEP MODE
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 3 for the timing diagram.
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this
mode when address remain stable for tACC+30ns. The
automatic sleep mode is independent of the CE#, WE#,
and OE# control signals. Standard address access timings provide new data when addresses are changed. While
in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table
represents the automatic sleep mode current specification.
SECTOR GROUP PROTECT OPERATION
The MX29LV640BU features hardware sector group protection. This feature will disable both program and erase
operations for these sector group protected. In this device, a sector group consists of four adjacent sectors
which are protected or unprotected at the same time. To
activate this mode, the programming equipment must
force VID on address pin A9 and control pin OE#, (suggest VID = 12V) A6 = VIL and CE# = VIL. (see Table 2)
Programming of the protection circuitry begins on the
falling edge of the WE# pulse and is terminated on the
rising edge. Please refer to sector group protect algorithm and waveform.
OUTPUT DISABLE
With the OE# input at a logic high level (VIH), output
from the devices are disabled. This will cause the output
pins to be in a high impedance state.
MX29LV640BU also provides another method. Which requires VID on the RESET# only. This method can be implemented either in-system or via programming equipment.
This method uses standard microprocessor bus cycle
timing.
RESET# OPERATION
The RESET# pin provides a hardware method of resetting
the device to reading array data. When the RESET# pin
is driven low for at least a period of tRP, the device
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write
commands for the duration of the RESET# pulse. The
device also resets the internal state machine to reading
array data. The operation that was interrupted should be
reinitiated once the device is ready to accept another
command sequence, to ensure data integrity
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
( with CE# and OE# at VIL and WE# at VIH). When
A1=1, it will produce a logical "1" code at device output
Q0 for a protected sector. Otherwise the device will produce 00H for the unprotected sector. In this mode, the
addresses, except for A1, are don't care. Address locations with A1 = VIL are reserved to read manufacturer
and device codes. (Read Silicon ID)
Current is reduced for the duration of the RESET# pulse.
When RESET# is held at VSS±0.3V, the device draws
CMOS standby current (ICC4). If RESET# is held at VIL
but not within VSS±0.3V, the standby current will be
greater.
It is also possible to determine if the group is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
a logical "1" at Q0 for the protected sector.
The RESET# pin may be tied to system reset circuitry.
A system reset would that also reset the Flash memory,
enabling the system to read the boot-up firmware from
the Flash memory.
CHIP UNPROTECT OPERATION
The MX29LV640BU also features the chip unprotected
mode, so that all sectors are unprotected after chip
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a "0" (busy) until the
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MX29LV640BU
unprotected is completed to incorporate any changes in
the code. It is recommended to protect all sectors before
activating chip unprotect mode.
SET# pin, all the previously protected sectors are protected again.
To activate this mode, the programming equipment must
force VID on control pin OE# and address pin A9. The
CE# pins must be set at VIL. Pins A6 must be set to
VIH. (see Table 2) Refer to chip unprotected algorithm
and waveform for the chip unprotected algorithm. The
unprotected mechanism begins on the falling edge of the
WE# pulse and is terminated on the rising edge.
SILICON ID READ OPERATION
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the
device resides in the target system. PROM programmers typically access signature codes by raising A9 to
a high voltage. However, multiplexing high voltage onto
address lines is not generally desired system design practice.
MX29LV640BU also provides another method. Which requires VID on the RESET# only. This method can be implemented either in-system or via programming equipment.
This method uses standard microprocessor bus cycle
timing.
MX29LV640BU provides hardware method to access the
silicon ID read operation. Which method requires VID on
A9 pin, VIL on CE#, OE#, A6, and A1 pins. Which apply
VIL on A0 pin, the device will output MXIC's manufacture code of C2H. Which apply VIH on A0 pin, the device
will output MX29LV640BU device code of 22D7H.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs (Q0-Q15) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotected algorithm is completed.
VERIFY SECTOR GROUP PROTECT STATUS
OPERATION
MX29LV640BU provides hardware method for sector group
protect status verify. Which method requires VID on A9
pin, VIH on WE# and A1 pins, VIL on CE#, OE#, A6, and
A0 pins, and sector address on A16 to A21 pins. Which
the identified sector is protected, the device will output
01H. Which the identified sector is not protect, the device
will output 00H.
WRITE PROTECT (WP#)
This Write Protect function provides a hardware protection method on the first sector without using VID.
If the system asserts VIL on the WP# pin, the device
disable program and erase function in the first sector independently of whether those sectors were protected or
unprotect using the method described in "Sector Group
Protection and Unprotect".
DATA PROTECTION
The MX29LV640BU is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transition. During power up the device automatically resets
the state machine in the Read mode. In addition, with its
control register architecture, alteration of the memory
contents only occurs after successful completion of specific command sequences. The device also incorporates
several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or
system noise.
If the system asserts VIH on the WP# pin, the device
reverts to whether the first sector was previously set to
be protected or unprotected using the method described
in "Sector Group Protection and Unprotect".
TEMPORARY SECTOR GROUP UNPROTECT
OPERATION
This feature allows temporary unprotect of previously protected sector to change data in-system. The Temporary
Sector Unprotect mode is activated by setting the RESET# pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased
as unprotected sector. Once VID is remove from the RE-
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MX29LV640BU
the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the
device reverts to sending command to sector SA0.
SECURED SILICON SECTOR
The MX29LV640BU features a OTP region where the system may access through a command sequence to create a permanent part identification as so called Electronic Serial Number (ESN) in the device. Once this region is programmed, any further modification on the region is impossible. The secured silicon sector is a 128
words in length, and uses a Secured Silicon Sector Indicator Bit (Q7) to indicate whether or not the Secured
Silicon Sector is locked when shipped from the factory.
This bit is permanently set at the factory and cannot be
changed, which prevent duplication of a factory locked
part. This ensures the security of the ESN once the product is shipped to the field.
FACTORY LOCKED:Secured Silicon Sector
Programmed and Protected At the Factory
In device with an ESN, the Secured Silicon Sector is
protected when the device is shipped from the factory.
The Secured Silicon Sector cannot be modified in any
way. A factory locked device has an 8-word random ESN
at address 000000h-000007h.
The MX29LV640BU offers the device with Secured Silicon Sector either factory locked or customer lockable.
The factory-locked version is always protected when
shipped from the factory , and has the Secured Silicon
Sector Indicator Bit permanently set to a "1". The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customs to utilize that
sector in any form they prefer. The customer-lockable
version has the secured sector Indicator Bit permanently
set to a "0". Therefore, the Secured Silicon Sector Indicator Bit permanently set to a "0". Therefore, the Second Silicon Sector Indicator Bit prevents customer, lockable device from being used to replace devices that are
factory locked.
CUSTOMER LOCKABLE:Secured Silicon
Sector NOT Programmed or Protected At the
Factory
As an alternative to the factory-locked version, the device
may be ordered such that the customer may program
and protect the 128-word Secured Silicon Sector.
Programming and protected the Secured Silicon Sector
must be used with caution since, once protected, there
is no procedure available for unprotecting the Secured
Silicon Sector area and none of the bits in the Secured
Silicon Sector memory space can be modified in any
way.
The Secured Silicon Sector area can be protected using
one of the following procedures:
The secured silicon sector address space in this device
is allocated as follows.
Secured Silicon Standard
Sector Address Factory
Express Flash Customer
Factory
Lockable
Range
000000h-
Locked
ESN or
000007h
000008h00007Fh
Locked
ESN
Determined
by Customer
Unavailable Determined
by Customer
Write the three-cycle Enter Secured Silicon Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 14, except
that RESET# may be at either VIH or VID. This allows insystem protection of the Secured Silicon Sector without
raising any device pin to a high voltage. Note that method
is only applicable to the Secured Silicon Sector.
Determined
by
Customer
Write the three-cycle Enter Secured Silicon Sector Region
command sequence, and then alternate method of sector
protection described in the :Sector Group Protection and
Unprotect" section.
The system access the Secured Silicon Sector through
a command sequence (refer to "Enter Secured Silicon/
Exit Secured Silicon Sector command Sequence). After
the system has written the Enter Secured Silicon Sector
command sequence, it may read the Secured Silicon
Sector by using the address normally occupied by the
first sector (SA0). This mode of operation continues until
Once the Secured Silicon Sector is programmed, locked
and verified, the system must write the Exit Secured
Silicon Sector Region command sequence to return to
reading and writing the remainder of the array.
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MX29LV640BU
LOW VCC WRITE INHIBIT
When VCC is less than VLKO the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the proper
signals to the control pins to prevent unintentional write
when VCC is greater than VLKO.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE# or WE# will
not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE# = VIL, CE#
= VIH or WE# = VIH. To initiate a write cycle CE# and
WE# must be a logical zero while OE# is a logical one.
POWER-UP SEQUENCE
The MX29LV640BU powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
POWER-UP WRITE INHIBIT
If WE#=CE#=VIL and OE#=VIH during power up, the
device does not accept commands on the rising edge of
WE#. The internal state machine is automatically reset
to the read mode on power-up.
POWER SUPPLY DE COUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between its VCC and GND.
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MX29LV640BU
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress. Either of the two
reset command sequences will reset the device (when
applicable).
SOFTWARE COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 3 defines the valid register command
sequences. Note that the Erase Suspend (B0H) and
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data are latched on
rising edge of WE# or CE#, whichever happens first.
TABLE 3. MX29LV640BU COMMAND DEFINITIONS
Command
First Bus
Second Bus Third Bus
Fourth Bus
Fifth Bus
Sixth Bus
Bus
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Addr
Data
Cycle
Addr
Data Addr
Data Addr Data
Read(Note 5)
1
RA
RD
Reset(Note 6)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
C2
Device ID
4
555
AA
2AA
55
555
90
X01
22D7
Secured Sector Factory
4
555
AA
2AA
55
555
90
X03
see
Addr Data Addr Data
Automatic Select(Note 7)
Protect (Note 9)
Note10
Sector Group Protect
4
555
AA
2AA
55
555
90
SA
xx00
Verify (Note 8)
4
555
AA
2AA
55
555
90
X02
xx01
3
555
AA
2AA
55
555
88
4
555
AA
2AA
55
555
90
xxx
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend(Note 10)
1
555
B0
Erase Resume(Note 11)
1
555
30
55
98
Enter Secured Silicon
Sector
Exit Secured Silicon
Sector
CFI Query (Note 12)
Legend:
X=Don't care
RA=Address of the memory location to be read.
RD=Data read from location RA during read operation.
PA=Address of the memory location to be programmed.
Addresses are latched on the falling edge of the WE# or
CE# pulse.
PD=Data to be programmed at location PA. Data is latched
on the rising edge of WE# or CE# pulse.
SA=Address of the sector to be erased or verified.
Address bits A21-A16 uniquely select any sector.
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MX29LV640BU
Notes:
1. See Table 1 for descriptions of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or Automatic Select data, all bus cycles are write operation.
4. Address bits are don't care for unlock and command cycles, except when PA or SA is required.
5. No unlock or command cycles required when device is in read mode.
6. The Reset command is required to return to the read mode when the device is in the Automatic Select mode or if
Q5 goes high.
7. The fourth cycle of the Automatic Select command sequence is a read cycle.
8. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. In the third
cycle of the command sequence, address bit A21=0 to verify sectors 0~63, A21=1 to verify sectors 64.
9. If WP# protects the highest address sectors, the data is 98h for factory locked and 18h for factory. If WP# protects
the lowest address sector, the data is 88h for factory locked and 08h for not factory locked.
10.The system may read and program functions in non-erasing sectors, or enter the Automatic Select mode, when in
the erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
11.The Erase Resume command is valid only during the Erase Suspend mode.
12.Command is valid when device is ready to read array data or when device is in Automatic Select mode.
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
READING ARRAY DATA
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the device to reading
array data (also applies to programming in Erase Suspend
mode). Once programming begins, however, the device
ignores reset commands until the operation is complete.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system
can read array data using the standard read timings,
except that if it reads at an address within erasesuspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See "Erase Suspend/Erase
Resume Commands" for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or
while in the Automatic Select mode. See the "Reset
Command" section, next.
The reset command may be written between the
sequence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command must be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to reading
array data (also applies during Erase Suspend).
RESET COMMAND
SILICON ID READ COMMAND SEQUENCE
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The SILICON ID READ command sequence allows the
host system to access the manufacturer and devices
codes, and determine whether or not a sector is protected.
Table 3 shows the address and data requirements.
The reset command may be written between the se-
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MX29LV640BU
This method is an alternative to that shown in Table 1,
which is intended for PROM programmers and requires
VID on address bit A9.
SETUP AUTOMATIC CHIP/SECTOR ERASE
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles
are then followed by the chip erase command 10H, or the
sector erase command 30H.
The SILICON ID READ command sequence is initiated
by writing two unlock cycles, followed by the SILICON
ID READ command. The device then enters the SILICON
ID READ mode, and the system may read at any address
any number of times, without initiating another command
sequence. A read cycle at address XX00h retrieves the
manufacturer code. A read cycle at address XX01h
returns the device code. A read cycle containing a sector
address (SA) and the address 02h returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
Table for valid sector addresses.
The MX29LV640BU contains a Silicon-ID-Read operation
to supplement traditional PROM programming methodology. The operation is initiated by writing the read silicon
ID command sequence into the command register. Following the command write, a read cycle with
A1=VIL,A0=VIL retrieves the manufacturer code of C2H.
A read cycle with A1=VIL, A0=VIH returns the device
code of 22D7H for MX29LV640BU.
The system must write the reset command to exit the
Automatic Select mode and return to reading array data.
AUTOMATIC
COMMAND
WORD PROGRAM COMMAND SEQUENCE
CHIP/SECTOR
ERASE
The device does not require the system to preprogram
prior to erase. The Automatic Erase algorithm automatically pre-program and verifies the entire memory for an
all zero data pattern prior to electrical erase. The system
is not required to provide any controls or timings during
these operations. Table 3 shows the address and data
requirements for the chip erase command sequence.
The command sequence requires four bus cycles, and is
initiated by writing two unlock write cycles, followed by
the program set-up command. The program address and
data are written next, which in turn initiate the Embedded
Program algorithm. The system is not required to provide
further controls or timings. The device automatically
generates the program pulses and verifies the
programmed cell margin. Table 3 shows the address and
data requirements for the word program command
sequence.
Any commands written to the chip during the Automatic
Erase algorithm are ignored. Note that a hardware reset
during the chip erase operation immediately terminates
the operation. The Chip Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses
are no longer latched. The system can determine the
status of the program operation by using Q7, Q6, or RY/
BY#. See "Write Operation Status" for information on these
status bits.
The system can determine the status of the erase operation by using Q7, Q6, Q2, or RY/BY#. See "Write Operation Status" for information on these status bits. When
the Automatic Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched.
Any commands written to the device during the
Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operation. The Word Program command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.
Figure 5 illustrates the algorithm for the erase operation.
See the Erase/Program Operations tables in "AC Characteristics" for parameters, and to Figure 4 for timing
diagrams.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" ,” or cause the Data# Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".
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MX29LV640BU
SECTOR ERASE COMMANDS
therefore will only be responded during Automatic Sector
Erase operation. When the Erase Suspend command is
issued during the sector erase operation, the device requires a maximum 20us to suspend the sector erase
operation. However, When the Erase Suspend command
is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends
the erase operation. After this command has been executed, the command register will initiate erase suspend
mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to the
Erase Resume, program data to, or read data from any
sector not selected for erasure.
The Automatic Sector Erase does not require the
device to be entirely pre-programmed prior to
executing the Automatic Set-up Sector Erase
command and Automatic Sector Erase command.
Upon executing the Automatic Sector Erase
command, the device will automatically program and
verify the sector(s) memory for an all-zero data
pattern. The system is not required to provide any
control or timing during these operations.
When the sector(s) is automatically verified to
contain an all-zero pattern, a self-timed sector erase
and verify begin. The erase and verify operations are
complete when the data on Q7 is "1" and the data on
Q6 stops toggling for two consecutive read cycles, at
which time the device returns to the Read mode. The
system is not required to provide any control or timing
during these operations.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend program operation is complete, the system can once again
read array data within non-suspended blocks.
When using the Automatic Sector Erase algorithm,
note that the erase automatically terminates when
adequate erase margin has been achieved for the
memory array (no erase verification command is
required). Sector erase is a six-bus cycle operation.
There are two "unlock" write cycles. These are
followed by writing the set-up command 80H. Two
more "unlock" write cycles are then followed by the
sector erase command 30H. The sector address is
latched on the falling edge of WE# or CE#, whichever
happens later , while the command (data) is latched
on the rising edge of WE# or CE#, whichever happens
first. Sector addresses selected are loaded into
internal register on the sixth falling edge of WE# or
CE#, whichever happens later. Each successive
sector load cycle started by the falling edge of WE#
or CE#, whichever happens later must begin within
50us from the rising edge of the preceding WE# or
CE#, whichever happens first. Otherwise, the loading
period ends and internal auto sector erase cycle
starts. (Monitor Q3 to determine if the sector erase
timer window is still open, see section Q3, Sector
Erase Timer.) Any command other than Sector Erase
(30H) or Erase Suspend (B0H) during the time-out
period resets the device to read mode.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.
QUERY COMMAND AND COMMON FLASH
INTERFACE (CFI) MODE
MX29LV640BU is capable of operating in the CFI mode.
This mode all the host system to determine the manufacturer of the device such as operating parameters and
configuration. Two commands are required in CFI mode.
Query command of CFI mode is placed first, then the
Reset command exits CFI mode. These are described in
Table 3.
The single cycle Query command is valid only when the
device is in the Read mode, including Erase Suspend,
Standby mode, and Read ID mode; however, it is ignored
otherwise.
ERASE SUSPEND
The Reset command exits from the CFI mode to the Read
mode, or Erase Suspend mode, or read ID mode. The
command is valid only when the device is in the CFI
mode.
This command only has meaning while the state machine is executing Automatic Sector Erase operation, and
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MX29LV640BU
Table 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal)
Description
Address h
Data h
10
0051
11
0052
12
0059
13
0002
14
0000
15
0040
16
0000
17
0000
18
0000
19
0000
1A
0000
Address h
Data h
VCC supply, minimum (2.7V)
1B
0027
VCC supply, maximum (3.6V)
1C
0036
VPP supply, minimum (none)
1D
0000
VPP supply, maximum (none)
1E
0000
Typical timeout for single word/byte write (2N us)
1F
0004
Typical timeout for maximum size buffer write (2N us)
20
0000
Typical timeout for individual block erase (2N ms)
21
000A
Typical timeout for full chip erase (2N ms)
22
0000
Maximum timeout for single word/byte write times (2N X Typ)
23
0005
Maximum timeout for maximum size buffer write times (2N X Typ)
24
0000
Maximum timeout for individual block erase times (2N X Typ)
25
0004
Maximum timeout for full chip erase times (not supported)
26
0000
Query-unique ASCII string "QRY"
Primary vendor command set and control interface ID code
Address for primary algorithm extended query table
Alternate vendor command set and control interface ID code (none)
Address for secondary algorithm extended query table (none)
Table 4-2. CFI Mode: System Interface Data Values
Description
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MX29LV640BU
Table 4-3. CFI Mode: Device Geometry Data Values
Description
Device size (2n bytes)
Flash device interface code (02=asynchronous x8/x16)
Maximum number of bytes in multi-byte write (not supported)
Number of erase block regions
Erase block region 1 information
[2E,2D] = # of blocks in region -1
[30, 2F] = size in multiples of 256-bytes
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
Address h
27
28
29
2A
2B
2C
2D
2E
2F
30
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Data h
0017
0001
0000
0000
0000
0001
007F
0000
0000
0001
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
Description
Query-unique ASCII string "PRI"
Major version number, ASCII
Minor version number, ASCII
Address sensitive unlock (0=required, 1= not required)
Erase suspend (2= to read and write)
Sector protect (N= # of sectors/group)
Temporary sector unprotected (1=supported)
Sector protect/unprotected scheme (04=29LV800 mode)
Simultaneous R/W operation (0=not supported)
Burst mode type (0=not supported)
Page mode type (0=not supported)
ACC (Acceleration) Supply Minimum
00h=Not Supported, D7-D4: Volt, D3-D0:100mV
ACC (Acceleration) Supply Maximum
00h=Not Supported, D7-D4: Volt, D3-D0:100mV
Top/Bottom Boot Sector Flag
02h=Bottom Boot Device, 03h=Top BootnDevice
P/N:PM1081
Address h
40
41
42
43
44
45
46
47
48
49
4A
4B
4C
4Dh
Data h
0050
0052
0049
0031
0033
0000
0002
0004
0001
0004
0000
0000
0000
00B5
4Eh
00C5
4Fh
0000h
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MX29LV640BU
WRITE OPERATION STATUS
The device provides several bits to determine the status
of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/BY#.
Table 5 and the following subsections describe the functions of these bits. Q7, RY/BY#, and Q6 each offer a
method for determining whether a program or erase operation is complete or in progress. These three bits are
discussed first.
Table 5. Write Operation Status
Status
Q7#
Note1
Q6
Q5
Note2
Q3
Q2
RY/BY#
Q7#
Toggle
0
N/A
No
Toggle
0
0
Toggle
0
1
Toggle
0
1
No
Toggle
0
N/A Toggle
1
Erase Suspend Read
(Non-Erase Suspended Sector)
Data
Data
Data
Data Data
1
Erase Suspend Program
Q7#
Toggle
0
N/A
N/A
0
Q7#
Toggle
1
N/A
No
Toggle
0
0
Toggle
1
1
Toggle
0
Q7#
Toggle
1
N/A
N/A
0
Word Program in Auto Program Algorithm
Auto Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)
In Progress
Erase Suspended Mode
Word Program in Auto Program Algorithm
Exceeded
Time Limits
Auto Erase Algorithm
Erase Suspend Program
Notes:
1. Performing successive read operations from the erase-suspended sector will cause Q2 to toggle.
2. Performing successive read operations from any address will cause Q6 to toggle.
3. Reading the word address being programmed while in the erase-suspend program mode will indicate logic "1" at the
Q2 bit.
However, successive reads from the erase-suspended sector will cause Q2 to toggle.
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MX29LV640BU
after the rising edge of the final WE# or CE#, whichever
happens first pulse in the command sequence (prior to
the program or erase operation), and during the sector
time-out.
Q7: Data# Polling
The Data# Polling bit, Q7, indicates to the host system
whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data#
Polling is valid after the rising edge of the final WE# pulse
in the program or erase command sequence.
During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6
to toggle. The system may use either OE# or CE# to
control the read cycles. When the operation is complete,
Q6 stops toggling.
During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to programming during Erase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program
address to read valid status information on Q7. If a program address falls within a protected sector, Data# Polling on Q7 is active for approximately 1 us, then the device returns to reading array data.
After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles for
100us and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase suspended.
When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. When
the device enters the Erase Suspend mode, Q6 stops
toggling. However, the system must also use Q2 to determine which sectors are erasing or erase-suspended.
Alternatively, the system can use Q7.
During the Automatic Erase algorithm, Data# Polling produces a "0" on Q7. When the Automatic Erase algorithm
is complete, or if the device enters the Erase Suspend
mode, Data# Polling produces a "1" on Q7. This is analogous to the complement/true datum output described for
the Automatic Program algorithm: the erase function
changes all the bits in a sector to "1" prior to this, the
device outputs the "complement,” or "0".” The system
must provide an address within any of the sectors selected for erasure to read valid status information on Q7.
If a program address falls within a protected sector, Q6
toggles for approximately 2us after the program command sequence is written, then returns to reading array
data.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algorithm is complete.
Table 5 shows the outputs for Toggle Bit I on Q6.
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchronously with Q0-Q6 while Output Enable
(OE#) is asserted low.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively erasing (that is,
the Automatic Erase algorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE# or CE#, whichever
happens first pulse in the command sequence.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE# or CE# to control the read
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MX29LV640BU
cycles.) But Q2 cannot distinguish whether the sector is
actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or
is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are
required for sectors and mode information. Refer to Table
5 to compare outputs for Q2 and Q6.
the only operating functions of the device under this condition.
If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on Q7-Q0 on the following read cycle.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or combination of sectors are bad.
If this time-out condition occurs during the word programming operation, it specifies that the entire sector containing that word is bad and this sector may not be reused, (other sectors are still functional and can be reused).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfully completed the program or erase operation. If it is still toggling, the device did not complete the
operation successfully, and the system must write the
reset command to return to reading array data.
The time-out condition may also appear if a user tries to
program a non blank location without erasing. In this
case the device locks out and never completes the Automatic Algorithm operation. Hence, the system never
reads a valid data on Q7 bit and Q6 never stops toggling.
Once the Device has exceeded timing limits, the Q5 bit
will indicate a "1". Please note that this is not a device
failure condition since the device was incorrectly used.
The Q5 failure condition may appear if the system tries
to program a to a "1" location that is previously programmed to "0". Only an erase operation can change a
"0" back to a "1".” Under this condition, the device halts
the operation, and when the operation has exceeded the
timing limits, Q5 produces a "1".
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively,
it may choose to perform other system tasks. In this
case, the system must start at the beginning of the algorithm when it returns to determine the status of the
operation.
Q3:Sector Erase Timer
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data# Polling
and Toggle Bit are valid after the initial sector erase command sequence.
Q5:Program/Erase Timing
Q5 will indicate if the program or erase time has exceeded
the specified limits (internal pulse count). Under these
conditions Q5 will produce a "1". This time-out condition
indicates that the program or erase cycle was not successfully completed. Data# Polling and Toggle Bit are
If Data# Polling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
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MX29LV640BU
still open. If Q3 is high ("1") the internally controlled erase
cycle has begun; attempts to write subsequent commands
to the device will be ignored until the erase operation is
completed as indicated by Data Polling or Toggle Bit. If
Q3 is low ("0"), the device will accept additional sector
erase commands. To insure the command has been accepted, the system software should check the status of
Q3 prior to and following each subsequent sector erase
command. If Q3 were high on the second status check,
the command may not have been accepted.
If the time between additional erase commands from the
system can be less than 50us, the system need not to
monitor Q3.
RY/BY#:READY/BUSY# OUTPUT
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in progress
or complete. The RY/BY# status is valid after the rising
edge of the final WE# pulse in the command sequence.
Since RY/BY# is an open-drain output, several RY/BY#
pins can be tied together in parallel with a pull-up resistor
to VCC .
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device
is ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.
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MX29LV640BU
ABSOLUTE MAXIMUM RATINGS
OPERATING RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE#, ACC and
RESET# (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Commercial (C) Devices
Ambient Temperature (TA ). . . . . . . . . . . . 0° C to +70° C
Industrial (I) Devices
Ambient Temperature (TA ). . . . . . . . . . -40° C to +85° C
VCC Supply Voltages
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#,
and RESET# may overshoot VSS to -2.0 V for periods
of up to 20 ns. Maximum DC input voltage on pin A9 is
+12.5 V which may overshoot to 14.0 V for periods up
to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.
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MX29LV640BU
DC CHARACTERISTICS
TA=-40°° C to 85°° C, VCC=2.7V~3.6V
Parameter Description
Test Conditions
I LI
VIN = VSS to VCC ,
Input Load Current (Note 1)
Min
Typ
Max
Unit
±1.0
uA
35
uA
±1.0
uA
VCC = VCC max
I LIT
A9,ACC Input Load Current
VCC=VCC max; A9 = 12.5V
I LO
Output Leakage Current
VOUT = VSS to VCC ,
VCC= VCC max
ICC1
ICC2
VCC Active Read Current
CE#= VIL,
5 MHz
9
16
mA
(Notes 2,3)
OE# = VIH
1 MHz
2
4
mA
VCC Active Write Current
CE#= V IL , OE# = V IH
26
30
mA
VCC Standby Current
CE#,RESET#,ACC=VCC±0.3V
0.2
15
uA
(Note 2)
WP#=VIH
VCC Reset Current
RESET=VSS±0.3V
0.2
15
uA
(Note 2)
WP#=VIH
Automatic Sleep Mode
VIL = V SS ± 0.3 V,
0.2
15
uA
(Note 2,5)
VIH = VCC ± 0.3 V,
5
10
mA
15
30
mA
(Notes 2,4,6)
ICC3
ICC4
ICC5
ACC = VCC ± 0.3 V, WP#=VIH
IACC
ACC Accelerated Program
CE#=VIL, OE#=VIH ACC pin
Current, Word or Byte
VCC pin
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3
V
VHH
Voltage for ACC Program
VCC = 3.0 V ± 10%
11.5
12.5
V
VCC = 3.0 V ± 10%
11.5
12.5
V
0.45
V
Acceleration
VID
Voltage for Automatic Select
and Temporary Sector Unprotect
VOL
Output Low Voltage
IOL= 4.0mA,VCC=VCC min
VOH1 Output High Voltage
IOH=-2.0mA,VCC=VCC min
0.85VCC
V
VOH2
IOH=-100uA,VCC=VCC min
VCC-0.4
V
1.5
V
VLKO Low VCC Lock-Out Voltage
(Note 4)
Notes:
1. On the WP# pin only, the maximum input load current when WP# = VIL is ± 5.0uA.
2. Maximum ICC specifications are tested with VCC = VCC max.
3. The ICC current listed is typically is less than 2 mA/MHz, with OE# at VIH . Typical specifications are for VCC =
3.0V.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t ACC + 30 ns. Typical sleep
mode current is 200 nA.
6. Not 100% tested.
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MX29LV640BU
SWITCHING TEST CIRCUITS
TEST SPECIFICATIONS
Test Condition
90
120
Output Load
1 TTL gate
Output Load Capacitance, CL 30
100
(including jig capacitance)
Input Rise and Fall Times
5
Input Pulse Levels
0.0-3.0
2.7K ohm
DEVICE UNDER
TEST
3.3V
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
Input timing measurement
reference levels
Output timing measurement
reference levels
Unit
pF
ns
V
1.5
V
1.5
V
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don't Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
SWITCHING TEST WAVEFORMS
3.0V
1.5V
Measurement Level
1.5V
0.0V
INPUT
OUTPUT
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MX29LV640BU
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
Std.
Description
Test Setup
90
120
Unit
tRC
Read Cycle Time (Note 1)
Min
90
120
ns
tACC
Address to Output Delay
CE#, OE#=VIL
Max
90
120
ns
tCE
Chip Enable to Output Delay
OE#=VIL
Max
90
120
ns
tOE
Output Enable to Output Delay
Max
35
50
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
30
30
ns
tDF
Output Enable to Output High Z (Note 1)
Max
30
30
ns
tOH
Output Hold Time From Address, CE#
Min
0
ns
Read
Min
0
ns
Output Enable Hold Time
Toggle and
Min
10
ns
(Note 1)
Data# Polling
or OE#, whichever Occurs First
tOEH
Notes:
1. Not 100% tested.
2. See SWITCHING TEST CIRCUITS and TEST SPECIFICATIONS TABLE for test specifications.
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MX29LV640BU
Figure 1. COMMAND WRITE OPERATION
VCC
Addresses
3V
VIH
ADD Valid
VIL
tAH
tAS
WE#
VIH
VIL
tWPH
tWP
tCWC
CE#
VIH
VIL
tCS
OE#
tCH
VIH
VIL
tDS
tDH
VIH
Data
DIN
VIL
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MX29LV640BU
READ/RESET OPERATION
Figure 2. READ TIMING WAVEFORMS
tRC
VIH
ADD Valid
Addresses
VIL
tCE
VIH
CE#
tRH
VIL
tRH
VIH
WE#
VIL
OE#
VIH
VIL
Outputs
tDF
tOE
tOEH
VOH
tACC
HIGH Z
tOH
DATA Valid
HIGH Z
VOL
VIH
RESET#
VIL
RY/BY#
0V
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MX29LV640BU
AC CHARACTERISTICS
Parameter
Description
Test Setup All Speed Options Unit
tREADY1
RESET# PIN Low (During Automatic Algorithms)
MAX
20
us
MAX
500
ns
tRP
RESET# Pulse Width (NOT During Automatic Algorithms) MIN
500
ns
tRH
RESET# High Time Before Read (See Note)
MIN
50
ns
tRB
RY/BY# Recovery Time (to CE#, OE# go low)
MIN
0
ns
tRPD
RESET# Low to Standby Mode
MIN
20
us
to Read or Write (See Note)
tREADY2
RESET# PIN Low (NOT During Automatic
Algorithms) to Read or Write (See Note)
Note:Not 100% tested
Figure 3. RESET# TIMING WAVEFORM
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Reset Timing during Automatic Algorithms
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MX29LV640BU
ERASE/PROGRAM OPERATION
Figure 4. AUTOMATIC CHIP/SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
2AAh
Address
Read Status Data
tAS
VA
SA
555h for chip erase
VA
tAH
CE#
tCH
OE#
tWHWH2
tWP
WE#
tCS
tWPH
tDS
tDH
55h
Data
In
Progress Complete
30h
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
1.SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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MX29LV640BU
Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Poll
from system
YES
No
DATA = FFh ?
YES
Auto Erase Completed
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MX29LV640BU
Figure 6. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
NO
Last Sector
to Erase ?
YES
Data Poll from System
NO
Data=FFh?
YES
Auto Sector Erase Completed
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MX29LV640BU
Figure 7. ERASE SUSPEND/RESUME FLOWCHART
START
Write Data B0H
NO
ERASE SUSPEND
Toggle Bit checking Q6
not toggled
YES
Read Array or
Program
Reading or
Programming End
NO
YES
Write Data 30H
ERASE RESUME
Continue Erase
Another
Erase Suspend ?
NO
YES
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MX29LV640BU
Figure 8. SECURED SILICON SECTOR PROTECTED ALGORITHMS FLOWCHART
START
Enter Secured Silicon Sector
Wait 1us
First Wait Cycle Data=60h
Second Wait Cycle Data=60h
A6=0, A1=1, A0=0
Wait 300us
No
Data = 01h ?
Yes
Device Failed
Write Reset Command
Secured Sector Protect Complete
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MX29LV640BU
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
Std.
Description
90
120
Unit
tWC
Write Cycle Time (Note 1)
Min
90
120
ns
tCWC
Command Write Cycle Time (Note 1)
Min
90
120
ns
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high during toggle
Min
45
50
0
ns
ns
bit polling
tDS
Data Setup Time
Min
45
50
ns
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
Read Recovery Time Before Write
Min
0
ns
(OE# High to WE# Low)
tGHEL
Read Recovery Time Before Write
Min
0
ns
tCS
CE# Setup Time
Min
0
ns
tCH
CE# Hold Time
Min
0
ns
tWP
Write Pulse Width
Min
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
Word Programming Operation (Note 2)
Typ
11
us
tWHWH2
Sector Erase Operation (Note 2)
Typ
1.6
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
us
tRB
Write Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
35
50
ns
Notes:
1. Not 100% tested.
2. See the "Erase And Programming Performance" section for more information.
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MX29LV640BU
Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORMS
Program Command Sequence(last two cycle)
tWC
555h
Address
Read Status Data (last two cycle)
tAS
PA
PA
PA
tAH
CE#
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tCS
tWPH
tDS
tDH
A0h
Status
PD
DOUT
Data
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
Figure 10. ACCELERATED PROGRAM TIMING DIAGRAM
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
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MX29LV640BU
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
Std.
Description
90
120
Unit
tWC
Write Cycle Time (Note 1)
Min
90
120
ns
tAS
Address Setup Time
Min
tAH
Address Hold Time
Min
45
50
ns
tDS
Data Setup Time
Min
45
50
ns
tDH
Data Hold Time
Min
0
ns
tGHEL
Read Recovery Time Before Write
Min
0
ns
0
ns
(OE# High to WE# Low)
tWS
WE# Setup Time
Min
0
ns
tWH
WE# Hold Time
Min
0
ns
tCP
CE# Pulse Width
Min
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
Word Programming Operation (Note 2)
Typ
11
us
tWHWH2
Sector Erase Operation (Note 2)
Typ
1.6
sec
45
50
ns
Notes:
1. Not 100% tested.
2. See the "Erase And Programming Performance" section for more information.
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MX29LV640BU
Figure 11. CE# CONTROLLED PROGRAM TIMING WAVEFORM
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Address
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
tWHWH1 or 2
CE#
tCPH
tWS
tDS
tBUSY
tDH
Q7
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET #
RY/BY#
NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.
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MX29LV640BU
Figure 12. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Data Poll
from system
Increment
Address
No
Verify Word Ok ?
YES
No
Last Address ?
YES
Auto Program Completed
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MX29LV640BU
SECTOR GROUP PROTECT/CHIP UNPROTECT
Figure 13. Sector Group Protect / Chip Unprotect Waveform (RESET# Control)
VID
VIH
RESET#
SA, A6
A1, A0
Valid*
Valid*
Sector Group Protect or Chip Unprotect
Data
60h
1us
60h
Valid*
Verify
40h
Status
Sector Group Protect:150us
Chip Unprotect:15ms
CE#
WE#
OE#
Note: For sector group protect A6=0, A1=1, A0=0. For sector group unprotect A6=1, A1=1, A0=0
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MX29LV640BU
Figure 14. IN-SYSTEM SECTOR GROUP PROTECT/CHIP UNPROTECT ALGORITHMS WITH
RESET#=VID
START
START
Protect all sectors:
The indicated portion of
the sector protect algorithm
must be performed
for all unprotected sectors
prior to issuing the first
sector unprotect address
PLSCNT=1
RESET#=VID
Wait 1us
PLSCNT=1
RESET#=VID
Wait 1us
Temporary Sector
Unprotect Mode
No
First Write
Cycle=60h?
First Write
Cycle=60h?
No
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector address
No
Sector Protect:
Write 60h to sector
address with
A6=0, A1=1, A0=0
All sectors
protected?
Yes
Set up first sector address
Wait 150us
Verify Sector Protect:
Write 40h to sector
address with
A6=0, A1=1, A0=0
Chip Unprotect:
Write 60h to sector
address with
A6=1, A1=1, A0=0
Reset
PLSCNT=1
Increment PLSCNT
Wait 15 ms
Read from
sector address
with
A6=0, A1=1, A0=0
Verify Chip Unprotect:
Write 40h to sector
address with
A6=1, A1=1, A0=0
No
Increment PLSCNT
No
PLSCNT=25?
Yes
Data=01h?
Read from
sector address
with
A6=1, A1=1, A0=0
Yes
No
Device failed
Protect another
sector?
Sector Protect
Algorithm
Reset
PLSCNT=1
Yes
No
PLSCNT=1000?
Data=00h?
No
Yes
Remove VID from RESET#
Yes
Device failed
Last sector
verified?
Write reset command
Chip Unprotect
Algorithm
Sector Protect complete
No
Yes
Remove VID from RESET#
Write reset command
Chip Unprotect complete
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MX29LV640BU
AC CHARACTERISTICS
Parameter
Description
Test Setup
All Speed Options
Unit
tVLHT
Voltage transition time
Min.
4
us
tWPP1
Write pulse width for sector group protect
Min.
100
ns
tWPP2
Write pulse width for chip unprotect
Min.
100
ns
tOESP
OE# setup time to WE# active
Min.
4
us
Figure 15. SECTOR GROUP PROTECT TIMING WAVEFORM (A9, OE# Control)
A1
A6
12V
3V
A9
tVLHT
Verify
12V
3V
OE#
tVLHT
tVLHT
tWPP 1
WE#
tOESP
CE#
Data
01H
F0H
tOE
A21-A16
Sector Address
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MX29LV640BU
Figure 16. SECTOR GROUP PROTECTION ALGORITHM (A9, OE# Control)
START
Set Up Sector Addr
PLSCNT=1
OE#=VID, A9=VID, CE#=VIL
A6=VIL
Activate WE# Pulse
Time Out 150us
Set WE#=VIH, CE#=OE#=VIL
A9 should remain VID
Read from Sector
Addr=SA, A1=1
No
PLSCNT=32?
.
No
Data=01H?
Yes
Device Failed
Protect Another
Sector?
Yes
Remove VID from A9
Write Reset Command
Sector Protection
Complete
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MX29LV640BU
Figure 17. CHIP UNPROTECT TIMING WAVEFORM (A9, OE# Control)
A1
12V
3V
A9
tVLHT
A6
Verify
12V
3V
OE#
tVLHT
tVLHT
tWPP 2
WE#
tOESP
CE#
Data
00H
F0H
tOE
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MX29LV640BU
Figure 18. CHIP UNPROTECT FLOWCHART (A9, OE# Control)
START
Protect All Sectors
PLSCNT=1
Set OE#=A9=VID
CE#=VIL,A6=1
Activate WE# Pulse
Time Out 15ms
Increment
PLSCNT
Set OE#=CE#=VIL
A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device
No
Data=00H?
Increment
Sector Addr
Yes
No
All sectors have
been verified?
No
PLSCNT=1000?
Yes
Device Failed
Yes
Remove VID from A9
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
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MX29LV640BU
AC CHARACTERISTICS
Parameter
Description
Test
All Speed Options Unit
Setup
tVIDR
VID Rise and Fall Time (see Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotect
Min
4
us
tRRB
RESET# Hold Time from RY/BY# High for Temporary
Min
4
us
Sector Group Unprotect
Figure 19. TEMPORARY SECTOR GROUP UNPROTECTED WAVEFORMS
12V
RESET#
0 or 3V
VIL or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
tRRB
RY/BY#
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MX29LV640BU
Figure 20. TEMPORARY SECTOR GROUP UNPROTECT FLOWCHART
Start
RESET# = VID (Note 1)
Perform Erase or Program Operation
Operation Completed
RESET# = VIH
Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
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MX29LV640BU
Figure 21. SILICON ID READ TIMING WAVEFORM
VCC
3V
VID
VIH
VIL
ADD
A9
ADD
A0
VIH
A1
VIH
VIL
tACC
tACC
VIL
VIH
ADD
VIL
CE#
VIH
VIL
WE#
VIH
tCE
VIL
OE#
VIH
tOE
VIL
tDF
tOH
tOH
VIH
DATA
Q0-Q15
DATA OUT
DATA OUT
VIL
22D7
00C2H
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MX29LV640BU
WRITE OPERATION STATUS
Figure 22. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
tRC
Address
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
Q7
Status Data
Q0-Q6
Status Data
Complement
Status Data
True
True
Valid Data
Valid Data
High Z
High Z
tBUSY
RY/BY#
NOTES:
VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data raed cycle.
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MX29LV640BU
Figure 23. Data# Polling Algorithm
Start
Read Q7~Q0
Add.=VA(1)
Yes
Q7 = Data ?
No
No
Q5 = 1 ?
Yes
Read Q7~Q0
Add.=VA
Yes
Q7 = Data ?
(2)
No
FAIL
Pass
Notes:
1. VA=valid address for programming.
2.Q7 should be rechecked even Q5="1" because Q7 may change simultaneously with Q5.
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MX29LV640BU
Figure 24. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
tRC
Address
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tDH
Q6/Q2
Valid Status
tOH
Valid Status
Valid Data
(second read)
(stops toggling)
Valid Status
(first read)
Valid Data
RY/BY#
NOTES:
VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
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MX29LV640BU
Figure 25. Toggle Bit Algorithm
START
Read Q7~Q0
Read Q7~Q0
(Note 1)
NO
Toggle Bit Q6
=Toggle?
YES
NO
Q5=1?
YES
Read Q7~Q0 Twice
(Note 1,2)
Toggle Bit Q6=
Toggle?
YES
Program/Erase Operation Not
Complete, Write Reset Command
Program/Erase Operation Complete
Note:
1. Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 changes to "1".
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MX29LV640BU
Figure 26. Q6 versus Q2
Enter Embedded
Erasing
Erase
Suspend
Erase
WE#
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Complete
Q6
Q2
NOTES:
The system can use OE# or CE# to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
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ERASE AND PROGRAMMING PERFORMANCE (1)
LIMITS
PARAMETER
MIN.
TYP.(2)
MAX.
UNITS
Sector Erase Time
0.9
15
sec
Chip Erase Time
45
65
sec
Word Programming Time
11
300
us
Accelerated Word Program Time
7
210
us
Chip Programming Time
45
140
sec
Erase/Program Cycles
Note:
100,000
Cycles
1. Not 100% Tested, Excludes external system level over head.
2. Typical program and erase times assume the following condition= 25° C,3.0V VCC.
Additionally, programming typicals assume checkerboard pattern.
LATCH-UP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
13.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
-100mA
+100mA
Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
TSOP PIN CAPACITANCE
Parameter Symbol
Parameter Description
Test Set
TYP
MAX
UNIT
CIN
Input Capacitance
VIN=0
6
7.5
pF
COUT
Output Capacitance
VOUT=0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN=0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA=25° C, f=1.0MHz
DATA RETENTION
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
10
Years
125
20
Years
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MX29LV640BU
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.
ACCESS TIME
Ball Pitch/
(ns)
Ball size
MX29LV640BUTC-90
90
MX29LV640BUTC-12
120
PACKAGE
48 Pin TSOP
Remark
Commercial grade
(Normal Type)
48 Pin TSOP
Commercial grade
(Normal Type)
MX29LV640BUTI-90
90
48 Pin TSOP
Industrial grade
(Normal Type)
MX29LV640BUTI-12
120
48 Pin TSOP
Industrial grade
(Normal Type)
MX29LV640BUXBC-90
90
0.8mm/0.3mm
63 Ball CSP
Commercial grade
MX29LV640BUXBC-12
120
0.8mm/0.3mm
63 Ball CSP
Commercial grade
MX29LV640BUXBI-90
90
0.8mm/0.3mm
63 Ball CSP
Industrial grade
MX29LV640BUXBI-12
120
0.8mm/0.3mm
63 Ball CSP
Industrial grade
MX29LV640BUTC-90G
90
48 Pin TSOP
Commercial grade
(Normal Type)
Pb-free
MX29LV640BUTC-12G
120
48 Pin TSOP
Commercial grade
(Normal Type)
Pb-free
48 Pin TSOP
Industrial grade
(Normal Type)
Pb-free
48 Pin TSOP
Industrial grade
(Normal Type)
Pb-free
MX29LV640BUTI-90G
MX29LV640BUTI-12G
MX29LV640BUXBC-90G
90
120
90
0.8mm/0.3mm
63 Ball CSP
Commercial grade
Pb-free
MX29LV640BUXBC-12G
120
0.8mm/0.3mm
63 Ball CSP
Commercial grade
Pb-free
MX29LV640BUXBI-90G
90
0.8mm/0.3mm
63 Ball CSP
Industrial grade
Pb-free
MX29LV640BUXBI-12G
120
0.8mm/0.3mm
63 Ball CSP
Industrial grade
Pb-free
P/N:PM1081
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MX29LV640BU
PACKAGE INFORMATION
P/N:PM1081
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P/N:PM1081
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MX29LV640BU
REVISION HISTORY
Revision No. Description
1.0
1. Removed "Preliminary"
Page
P1
P/N:PM1081
Date
MAR/08/2005
REV. 1.0, MAR. 08, 2005
63
MX29LV640BU
MACRONIX INTERNATIONAL CO., LTD.
Headquarters:
TEL:+886-3-578-6688
FAX:+886-3-563-2888
Europe Office :
TEL:+32-2-456-8020
FAX:+32-2-456-8021
Hong Kong Office :
TEL:+86-755-834-335-79
FAX:+86-755-834-380-78
Japan Office :
Kawasaki Office :
TEL:+81-44-246-9100
FAX:+81-44-246-9105
Osaka Office :
TEL:+81-6-4807-5460
FAX:+81-6-4807-5461
Singapore Office :
TEL:+65-6346-5505
FAX:+65-6348-8096
Taipei Office :
TEL:+886-2-2509-3300
FAX:+886-2-2509-2200
MACRONIX AMERICA, INC.
TEL:+1-408-262-8887
FAX:+1-408-262-8810
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.