PHILIPS BF1107 N-channel single gate mos-fet Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF1107; BF1107W
N-channel single gate MOS-FETs
Product specification
Supersedes data of 1998 Jun 22
1999 May 14
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
FEATURES
• Currentless RF switch.
3
handbook, halfpage
APPLICATIONS
• Various RF switching applications such as:
- Passive loop through for VCR tuner
1
2
- Transceiver switching.
Top view
MSB003
Marking code: S3p.
DESCRIPTION
Fig.1 Simplified outline SOT23 (BF1107).
The BF1107 and BF1107W are depletion type field-effect
transistors in SOT23 and SOT323 packages respectively.
The low loss and high isolation capabilities of this
MOS-FET provide excellent RF switching functions.
Integrated diodes between gate and source and between
gate and drain protect against excessive input voltage
surges. Drain and source are interchangeable.
3
handbook, halfpage
3
1
PINNING
2
DESCRIPTION
1
PIN
BF1107
BF1107W
1
drain
drain
2
source
source
3
gate
gate
2
Top view
MAM062
Marking code: W3.
Fig.2 Simplified outline SOT323 (BF1107W).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
S21(on)2
S21(off)2
losses (on-state)
RDSon
drain-source on-resistance
VGS = 0; ID = 1 mA
VGSoff
pinch-off voltage
ID = 20 µA; VDS = 1 V
RS = RL = 50 Ω; f = 50 to 860 MHz
isolation (off-state)
MIN.
TYP.
MAX.
UNIT
−
−
2.5
dB
30
−
−
dB
−
12
20
Ω
−
−3
−4.5
V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 May 14
2
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
3
V
VSD
source-drain voltage
−
3
V
VDG
drain-gate voltage
−
7
V
VSG
source-gate voltage
−
7
V
ID
drain current
−
10
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point; note 1
VALUE
UNIT
260
K/W
Note
1. Soldering point of the gate lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)GSS
gate-source breakdown voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS = 0; IGS = 0.1 mA
7
−
−
V
VGSoff
gate-source pinch-off voltage
VDS = 1 V; ID = 20 µA
−
−3
−4.5
V
IDSX
drain-source leakage current
VGS = −5 V; VDS = 2 V
−
−
10
µA
IGSS
gate cut-off current
VGS = −5 V; VDS = 0
−
−
100
nA
DYNAMIC CHARACTERISTICS
Common gate; Tamb = 25°C.
SYMBOL
S21(on)2
S21(off)2
PARAMETER
losses (on-state)
isolation (off-state)
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VSG = VDG = 0; RS = RL = 50 Ω;
f = 50 to 860 MHz
−
−
2.5
dB
VSG = VDG = 0; RS = RL = 75 Ω;
f = 50 to 860 MHz
−
−
3.5
dB
VSG = VDG = 5 V; RS = RL = 50 Ω;
f = 50 to 860 MHz
30
−
−
dB
VSG = VDG = 5 V; RS = RL = 75 Ω;
f = 50 to 860 MHz
30
−
−
dB
RDSon
drain-source on-resistance
VGS = 0; ID = 1 mA
−
12
20
Ω
Cig
input capacitance
VSG = VDG = 5 V; f = 1 MHz
−
0.9
−
pF
VSG = VDG = 0; f = 1 MHz
−
1.5
2
pF
VSG = VDG = 5 V; f = 1 MHz
−
0.9
−
pF
VSG = VDG = 0; f = 1 MHz
−
1.5
2
pF
Cog
1999 May 14
output capacitance
3
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
MBK831
0
MBK832
0
handbook, halfpage
2
S
handbook, halfpage
2
S
21(on)
(dB)
−1
21(off)
(dB)
(2)
(1)
−20
−2
−3
−40
(2)
−4
(1)
−5
10
102
−60
10
103
f (MHz)
VSG = VDG = 0.
(1) RS = RL = 50 Ω.
(2) RS = RL = 75 Ω.
Fig.3
Fig.4
MBK833
0
handbook, halfpage
RL
(dB)
−5
−10
−15
(1)
(2)
−25
10
102
f (MHz)
103
VSG = VDG = 0.
(1) RS = RL = 50 Ω.
(2) RS = RL = 75 Ω.
Fig.5
Input and output return losses (on-state)
as function of frequency; typical values.
1999 May 14
f (MHz)
103
VSG = VDG = 5 V.
(1) RS = RL = 50 Ω.
(2) RS = RL = 75 Ω.
Losses (on-state) as a function of
frequency; typical values.
−20
102
4
Isolation (off-state) as a function of
frequency; typical values.
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 May 14
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 May 14
REFERENCES
IEC
JEDEC
EIAJ
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 14
7
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© Philips Electronics N.V. 1999
SCA 64
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125004/00/03/pp8
Date of release: 1999 May 14
Document order number:
9397 750 05776
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