BA592/BA892... Silicon RF Switching Diode For band switching in TV/VTR tuners and mobile applications Very low forward resistance (typ. 0.45 @ 3 mA) small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323 SCD80 TSLP-2-1 SC79 Configuration single single single, leadless single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol LS(nH) 1.8 0.6 0.4 0.6 Value Marking blue S AA AA A Unit Diode reverse voltage VR 35 V Forward current IF 100 mA Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Unit K/W 135 120 70 BA592 BA892, BA892-02V BA892-02L 1For Value calculation of RthJA please refer to Application Note Thermal Resistance 1 Feb-04-2003 BA592/BA892... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - - 1 V DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 0.65 0.92 1.4 VR = 3 V, f = 1 MHz 0.6 0.85 1.1 - 1 - - 100 - VR = 0 V, f = 100 MHz Reverse parallel resistance RP k VR = 0 V, f = 100 MHz Forward resistance rf IF = 3 mA, f = 100 MHz - 0.45 0.7 IF = 10 mA, f = 100 MHz - 0.36 0.5 rr - 120 - ns I-region width WI - 3 - µm Insertion loss1) |S21|2 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3mA, RL = 100 dB IF = 0.1 mA, f = 1 GHz - -0.1 - IF = 3 mA, f = 1 GHz - -0.05 - IF = 10 mA, f = 1 GHz - -0.04 - VR = 0 V, f = 100 MHz - -23.5 - VR = 0 V, f = 470 MHz - -10.5 - VR = 0 V, f = 1 GHz - -5.5 - Isolation1) 1BA892-02L |S21|2 in series configuration, Z = 50 2 Feb-04-2003 BA592/BA892... Diode capacitance CT = (VR ) Reverse parallel resistance RP = (VR ) f = Parameter f = Parameter 10 3 2 KOhm 100 MHz pF Rp CT 10 2 1.2 10 1 1 GHz 1 MHz ... 1 GHz 0.8 10 0 0.4 0 0 5 10 15 V 20 10 -1 0 30 5 10 15 20 V VR Forward resistance rf = (I F) Forward current IF = (VF) f = 100MHz TA = Parameter 10 2 10 0 A Ohm 10 -1 1 10 -2 rf IF 10 30 VR 10 -3 10 0 -40 °C 25 °C 85 °C 125 °C 10 -4 10 -5 10 -1 10 -2 10 -1 10 0 10 1 10 -6 0 mA 10 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 3 Feb-04-2003 BA592/BA892... Insertion loss |S21 |2 = (f) Isolation |S21 |2 = (f) IF = Parameter VR = Paramter BA892-02L in series configuration, Z = 50 BA892-02L in series configuration, Z = 50 0 0 dB |S21|2 |S21|2 dB 10 mA 3 mA 1 mA 0.1 mA -0.2 -10 0V 1V 10 V -15 -20 -0.3 -25 -0.4 0 0.5 1 1.5 2 GHz -30 0 3 f 0.5 1 1.5 2 GHz 3 f 4 Feb-04-2003