SPICE MODEL: DMN2005K PRODUCT NEWNEW PRODUCT DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate A SOT-23 B D G H K Mechanical Data • • • • • • • • J M Drain Body Diode Gate Gate Protection Diode Source ESD protected A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0° 8° All Dimensions in mm EQUIVALENT CIRCUIT Maximum Ratings Max L D Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate) Min C TOP VIEW E Dim @TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage Characteristic VDSS 20 V Gate-Source Voltage Drain Current per element (Note 1) VGSS V Pd ±10 300 600 350 mW RθJA 357 °C/W Tj, TSTG -65 to +150 °C Continuous Pulsed (Note 3) ID Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. mA Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30734 Rev. 3 - 2 1 of 4 www.diodes.com DMN2005K © Diodes Incorporated @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 10 μA VDS = 17V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±5 μA VGS = ±8V, VDS = 0V VGS(th) 0.53 ⎯ 0.9 V VDS = VGS, ID = 100μA RDS (ON) ⎯ ⎯ ⎯ ⎯ 3.5 1.7 Ω VGS = 1.8V, ID = 200mA VGS = 2.7V, ID = 200mA ⏐Yfs⏐ 40 ⎯ ⎯ mS OFF CHARACTERISTICS (Note 5) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance VDS = 3V, ID = 10A Notes: 5. Short duration test pulse used to minimize self-heating effect. 2 VGS = 2.0V 1.8 o Ta = 25 C 1.6 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics TA = 150° C VGS =1.8V 1.4 TA = 125° C 1.2 1 VGS = 1.6V TA = 85° C TA = 25° C 0.8 TA = 0° C VGS = 1.4V 0.6 0.4 TA = -55° C VGS = 1.2V 0.2 VGS = 1.0V 0 0 1 2 3 4 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage TA = 150° C TA = -55° C TA = 85° C TA = 0° C TA = 25° C ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature DS30734 Rev. 3 - 2 T A = 125°C 2 of 4 www.diodes.com DMN2005K © Diodes Incorporated NEW PRODUCT ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current TA = 150° C TA = 85°C T A = 25°C TA = -55° C TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature |YfS|, FORWARD TRANSFER ADMITTANCE (S) VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage f=1MHz C T , CAPACITANCE (pF) Ciss Coss Crss ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DS30734 Rev. 3 - 2 3 of 4 www.diodes.com DMN2005K © Diodes Incorporated Packaging SOT-23 Device DMN2005K-7 Notes: Shipping 3000/Tape & Reel 6. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf. Marking Information DM Date Code Key Year 2006 T Code 2007 U DM = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September YM NEW PRODUCT Ordering Information (Note 6) 2008 V 2009 W 2010 X Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30734 Rev. 3 - 2 4 of 4 www.diodes.com DMN2005K © Diodes Incorporated