AP4578GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BVDSS
▼ Simple Drive Requirement
D1/D2
▼ Good Thermal Performance
60V
RDS(ON)
72mΩ
ID
▼ Fast Switching Performance
S1
G1
S2
9A
P-CH BVDSS
TO-252-4L
Description
-60V
RDS(ON)
G2
125mΩ
ID
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
-6A
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Units
P-channel
60
-60
V
+25
+25
V
Continuous Drain Current
3
9
-6
A
Continuous Drain Current
3
6
-4
A
30
-30
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
8.9
W
Linear Derating Factor
0.07
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
3
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Units
14
℃/W
110
℃/W
1
201108113
AP4578GH
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
-
0.05
-
V/℃
VGS=10V, ID=5A
-
-
72
mΩ
VGS=4.5V, ID=3A
-
-
90
mΩ
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125oC) VDS=48V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
ID=5A
-
9
15
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
2
td(on)
Turn-on Delay Time
VDS=30V
-
7
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
21
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
750
1200
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
IS=5A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
33
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
55
-
nC
2
AP4578GH
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient
RDS(ON)
Min.
Typ.
-60
-
-
V
Reference to 25℃,ID=-1mA
-
-0.04
-
V/℃
VGS=-10V, ID=-3A
-
-
125
mΩ
VGS=-4.5V, ID=-2A
-
-
150
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=-48V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
ID=-3A
-
13
21
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-30V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
35
-
ns
tf
Fall Time
RD=30Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=-25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5
7.5
Ω
Min.
Typ.
IS=-3A, VGS=0V
-
-
-1.2
V
1030 1650
pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
42
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
82
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4578GH
N-Channel
25
25
T C = 25 o C
10V
7.0V
5.0V
4.5V
20
ID , Drain Current (A)
ID , Drain Current (A)
20
15
10
V G =3.0V
5
15
10
V G =3.0V
5
0
0
0
1
2
3
4
0
5
V DS , Drain-to-Source Voltage (V)
2
3
4
5
Fig 2. Typical Output Characteristics
95
1.6
ID=3A
T C =25 o C
I D =5A
V G =10V
1.4
Normalized RDS(ON)
85
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
75
1.2
1.0
-6.3
-5
65
0.8
55
0.6
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
Normalized VGS(th) (V)
4
3
IS(A)
10V
7.0V
5.0V
4.5V
T C =150 o C
T j =150 o C
2
T j =25 o C
1
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4578GH
N-Channel
f=1.0MHz
10
1000
8
6
C (pF)
VGS , Gate to Source Voltage (V)
C iss
ID=5A
V DS = 48 V
100
C oss
4
C rss
2
10
0
0
4
8
12
16
20
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
10
ID (A)
100us
1
1ms
o
T C =25 C
Single Pulse
10ms
100ms
DC
0.1
0.1
1
10
100
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
VG
V DS =5V
ID , Drain Current (A)
20
QG
T j =150 o C
T j =25 o C
4.5V
15
QGS
QGD
10
5
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4578GH
P-Channel
20
20
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
T C = 25 C
15
o
T C =150 C
-ID , Drain Current (A)
o
V G = - 3.0V
10
5
-10V
-7.0V
-5.0V
-4.5V
15
10
V G = - 3.0V
5
0
0
0
1
2
3
4
5
6
7
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
135
2.0
I D = -2 A
T C =25 o C
I D = -3 A
V G = - 10V
1.8
Normalized RDS(ON)
RDS(ON) (mΩ)
125
115
1.6
1.4
1.2
1.0
105
0.8
0.6
95
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2
Normalized -VGS(th) (V)
1.5
-IS(A)
2
T j =25 o C
T j =150 o C
1
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4578GH
P-Channel
f=1.0MHz
-VGS , Gate to Source Voltage (V)
10
10000
I D =-3A
V DS =-48V
8
1000
C iss
C (pF)
6
4
C oss
100
C rss
2
0
10
0.0
5.0
10.0
15.0
20.0
25.0
1
30.0
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.0
Operation in this area
limited by RDS(ON)
-ID (A)
10.0
100us
1.0
1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
-ID , Drain Current (A)
V DS =-5V
15
T j =25 o C
QG
T j =150 o C
-4.5V
QGS
10
QGD
5
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7