NTR0202PL, NVTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space AEC−Q101 Qualified and PPAP Capable − NVTR0202PL These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(on) Typ ID MAX −20 V 550 mW @ −10 V −400 mA P−Channel D Applications • • • • • DC−DC Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones G S MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Current @ TA = 25°C Pulsed Drain Current (tp ≤ 10 ms) ID IDM −0.4 −1.0 A Total Power Dissipation @ TA = 25°C (Note 1) PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance − Junction−to−Ambient RqJA 556 °C/W Source Current (Body Diode) IS 0.4 A Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 s TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. Drain 3 SOT−23 CASE 318 STYLE 21 PL M G G 1 Gate 2 Source PL = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NTR0202PLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NTR0202PLT3G SOT−23 (Pb−Free) 10000 / Tape & Reel NVTR0202PLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 5 1 Publication Order Number: NTR0202PL/D NTR0202PL, NVTR0202PL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = −10 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VDS = −20 V, VGS = 0 V, TJ = 25°C) (VDS = −20 V, VGS = 0 V, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 V, VDS = 0 V) IGSS −20 V mV/°C 33 −1.0 −10 mA ±100 nA −1.9 3.0 −2.3 V mV/°C 0.55 0.80 0.80 1.10 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = −250 mA) (Negative Temperature Coefficient) VGS(th) Static Drain−to−Source On−Resistance (VGS = −10 V, ID = −200 mA) (VGS = −4.5 V, ID = −50 mA) RDS(on) Forward Transconductance (VDS = −10 V, ID = −200 mA) −1.1 W gfs 0.5 Mhos pF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −5.0 V, VGS = 0 V, F = 1.0 MHz) Reverse Transfer Capacitance Ciss 70 Coss 74 Crss 26 td(on) 3.0 tr 6.0 td(off) 18 tf 4 QTOT 2.18 QGS 0.41 QGD 0.40 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −15 V, ID = −200 mA, VGS = −10 V, RG = 6.0 W) Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge (VDS = −15 V, ID = −200 mA, VGS = −10 V) ns nC BODY−DRAIN DIODE CHARACTERISTICS (Note 2) VSD Diode Forward Voltage (Note 2) (IS = −400 mA, VGS = 0 V) (IS = −400 mA, VGS = 0 V, TJ = 150°C) Reverse Recovery Time Reverse Recovery Stored Charge −0.8 −0.65 trr 11.8 (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) ta 9 tb 3 (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) QRR 0.007 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 −1.0 V ns mC NTR0202PL, NVTR0202PL 1 VGS = −10 V TJ = 25°C −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 0.75 −6 V −4 V −5.5 V 0.5 −5 V 0.25 −3.5 V −3 V −4.5 V −2.5 V 0 0 0.25 0.5 0.75 0.75 TJ = 125°C 0.5 TJ = 25°C 0.25 0 1.0 VDS ≥ −10 V TJ = 40°C 0 1 1.5 TJ = 150°C 1 TJ = 25°C 0.5 TJ = 40°C 0.375 0.5 5 1.0 VGS = −4.5 V 0.75 VGS = −10 V 0.5 0.25 0 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Gate Voltage 2.5 1000 VGS = 0 V TJ = 150°C 2 1.5 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.25 3 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 0.125 2 ID = −0.05 A VGS = −4.5 V ID = −0.2 A VGS = −10 V 1 0.5 0 −40 100 10 1 TJ = 25°C 0.1 −15 10 35 60 85 110 135 150 2 TJ, JUNCTION TEMPERATURE (°C) 6 10 14 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 18 TJ = 25°C Ciss C, CAPACITANCE (pF) 80 Crss 60 Ciss 40 Coss 20 Crss 0 10 5 −VGS 0 5 −VDS 10 15 20 10 QT 7.5 Ciss 5 Q1 2.5 TJ = 25°C ID = −0.4 A Crss 0 0 −GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.5 1 1.5 2 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 7. Capacitance Variation 100 1 −IS, SOURCE CURRENT (AMPS) VDD = −16 V ID = −0.2 A VGS = −4.5 V t, TIME (ns) Q2 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTR0202PL, NVTR0202PL td(off) tf 10 tr td(on) VGS = 0 V TJ = 25°C 0.75 0.5 0.25 0 1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 0.9 NTR0202PL, NVTR0202PL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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