WEDC EDI8G32512C25MZC-G 512kx32 static ram cmos, high speed module Datasheet

EDI8F32512C
512Kx32 Static RAM CMOS, High Speed Module
FEATURES
DESCRIPTION
512Kx32 bit CMOS Static
Random Access Memory
The EDI8F32512C is a high speed 16 megabit Static RAM
module organized as 512K words by 32 bits. This module is
constructed from four 512Kx8 Static RAMs in SOJ packages
on an epoxy laminate (FR4) board.
Access Times: 15, 20, and 25ns
Individual Byte Selects
Fully Static, No Clocks
TTL Compatible I/O
Four chip enables (EØ-E3) are used to independently
enable the four bytes. Reading or writing can be executed on
individual bytes or any combination of multiple bytes through
proper use of selects.
High Density Package
72 Pin ZIP, No. 173
72 lead SIMM, No. 174 (Gold Option)
Common Data Inputs and Outputs
The EDI8F32512C is offered in 72 pin ZIP and 72 lead SIMM
packages, which enable 16 megabits of memory to be placed
in less than 1.3 square inches of board space.
All inputs and outputs are TTL compatible and operate from
a single 5V supply. Fully asynchronous circuitry requires no
clocks or refreshing for operation and provides equal access
and cycle times for ease of use.
Single +5V (±10%) Supply Operation
Note: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
Pins PD1- PD4, are used to identify module memory density in
applications where alternate modules can be interchanged.
FIG. 1
Pin Names
A0-A18
E0#-E3#
W#
G#
DQ0-DQ31
Pin Configurations and Block Diagram
NC
PD3
PD0
DQ0
DQ1
DQ2
DQ3
VCC
A7
A8
A9
DQ4
DQ5
DQ6
DQ7
W#
A14
E0#
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
E2#
A16
VSS
DQ16
DQ17
DQ18
DQ19
A10
A11
A12
A13
DQ20
DQ21
DQ22
DQ23
VSS
NC
NC
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
NC
PD2
VSS
PD1
DQ8
DQ9
DQ10
DQ11
A0
A1
A2
DQ12
DQ13
DQ14
DQ15
VSS
A15
E1#
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
E3#
A17
G#
DQ24
DQ25
DQ26
DQ27
A3
A4
A5
VCC
A6
DQ28
DQ29
DQ30
DQ31
A18
NC
VCC
VSS
NC
Address Inputs
Chip Enables
Write Enable
Output Enable
Common Data
Input/Output
Power (+5V±10%)
Ground
No Connectiona
A0-A18
W#
G#
512K
X 8
DQ0-DQ7
512K
X 8
DQ8-DQ15
512K
X 8
DQ16-DQ23
512K
X 8
DQ24-DQ31
E0#
E1#
E2#
PD0, PD1, PD3= OPEN
PD2= VSS
E3#
8G32512C Pin Config.
8G32512C Blk Dia.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI8F32512C
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to VSS
Operating Temperature TA (Ambient)
Commercial
Industrial
Storage Temperature, Plastic
Power Dissipation
Output Current
RECOMMENDED DC OPERATING
CONDITIONS
-0.5V to 7.0V
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
0°C to +70°C
-40°C to +85°C
-55°C to +125°C
5.0 Watts
20 mA
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Sym
VCC
VSS
VIH
VIL
Min
4.5
0
2.2
-0.3
Typ
5.0
0
---
Max
5.5
0
6.0
0.8
Units
V
V
V
V
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
VSS to 3.0V
5ns
1.5V
1TTL, CL = 30pF
(Note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
DC ELECTRICAL CHARACTERISTICS
Parameter
Sym
ICC1
ICC2
ICC3
Operating Power Supply Current
Standby (TTL) Power Supply Current
Full Standby Power Supply Current
CMOS
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
VOH
VOL
Conditions
W#, E# = VIL, II/O = 0mA, Min Cycle
E > VIH, VIN > VIL or VIN > VIH
E > VCC-0.2V
VIN > VCC=0.2V or VIN > 0.2V
VIN = 0V to VCC
V I/O = 0V TO VCC
IOH = -4.0mA
IOL = 8.0mA
Min
Typ*
Max
800
300
80
Units
mA
mA
mA
--2.4
--
-----
±20
±20
-0.4
µA
µA
V
V
*Typical: TA = 25°C, VCC = 5.0V
CAPACITANCE
TRUTH TABLE
E#
H
L
L
L
W#
X
H
L
H
G#
X
L
X
H
Mode
Standby
Read
Write
Output
Deselect
Output
HIGH Z
DOUT
DIN
HIGH Z
(f=1.0MHz, VIN=VCC or VSS)
Parameter
Address Lines
Data Lines
Chip Enable Line
Write Line
Power
ICC2/ICC3
ICC1
ICC1
ICC1
Sym
CI
CD/Q
CC
CN
Max
45
20
20
45
Unit
pF
pF
pF
pF
These parameters are sampled, not 100% tested.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI8F32512C
AC CHARACTERISTICS READ CYCLE
Symbol
Parameter
JEDEC
tAVAV
tAVQV
tELQV
tELQX
tEHQZ
tAVQX
tGLQV
tGLQX
tGHQZ
Read Cycle Time
Address Access Time
Chip Enable Access
Chip Enable to Output in Low Z (1)
Chip Disable to Output in High Z (1)
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z (1)
Output Disable to Output in High (1)
15ns
Alt.
TRA
TAA
TACS
TCLZ
TCHZ
TOH
TOE
TOLZ
TOHZ
Min
15
20ns
Max
Min
20
15
15
25ns
Max
Min
25
20
20
3
3
25
25
3
6
10
3
3
12
3
6
8
0
Max
0
10
0
620
8
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes: 1. Parameter guaranteed, but not tested.
FIG. 2
READ CYCLE 1 - W# HIGH, G#, E# LOW
tAVAV
A
E#
tELWH
tWHAX
tAVWH
tWLWH
W#
tAVWL
tDVWH
D
tWHDX
DATA VALID
tWHQX
tWLQZ
HIGH Z
Q
8F32512C Write Cyc1
FIG. 3
READ CYCLE 2 - W# HIGH
tAVAV
A
tAVQV
E#
tELQV
tEHQZ
tELQX
G#
tGLQV
tGHQZ
tGLQX
Q
8F32512C Rd Cyc2
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI8F32512C
AC CHARACTERISTICS WRITE CYCLE
Symbol
Parameter
JEDEC
tAVAV
tELWH
tWLEH
tAVWL
tAVEL
tAVWH
tAHEH
tWLWH
tELEH
tWHAX
tEHAX
tWHDX
tEHDX
tWLQZ
tDVWH
tDVEH
tWHQX
Write Cycle Time
Chip Enable to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data Hold Time
Write to Output in High Z (1)
Data to Write Time
Output Active from End of Write (1)
15ns
Alt.
TWC
TCW
TCW
TAS
TAS
TAW
TAW
TWP
TWP
TWR
TWR
TDH
TDH
TWHZ
TDW
TDW
TWLZ
Min
15
8
8
0
0
8
8
10
10
0
0
0
0
0
7
7
3
20ns
Max
Min
20
15
15
0
0
15
15
15
15
0
0
0
0
0
9
9
3
6
25ns
Max
8
Min
25
20
20
0
0
15
15
15
15
0
0
0
0
0
10
10
3
Max
12
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes: 1. Parameter guaranteed, but not tested.
FIG. 4
WRITE CYCLE 1 - W# CONTROLLED
tAVAV
A
E#
tELWH
tWHAX
tAVWH
tWLWH
W#
tAVWL
tDVWH
D
tWHDX
DATA VALID
tWHQX
tWLQZ
HIGH Z
Q
8F32512C Write Cyc1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI8F32512C
FIG. 5
WRITE CYCLE 2 - E# CONTROLLED
tAVAV
A
tAVEL
tELEH
E#
tAVEH
tEHAX
tWLEH
W#
tDVEH
D
tEHDX
DATA VALID
HIGH Z
Q
8F32512C Write Cyc2
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI8F32512C
ORDERING INFORMATION
Part Number
Speed
(ns)
15
20
25
EDI8F32512C15MMC
EDI8F32512C20MMC
EDI8F32512C25MMC
Package
No.
174
174
174
Part Number
EDI8F32512C15MZC
EDI8F32512C20MZC
EDI8F32512C25MZC
Speed
(ns)
15
20
25
Package
No.
173
173
173
NOTES:
• Consult Factory for availability of RoHS compliant products. (indicated with "G" at the end of the part number)
• Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to
be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others)
• Consult factory for availability of industrial temperature (-40°C to 85°C) option
• To order gold SIMM option, change from "EDI8F" to "EDI8G".
PACKAGE DESCRPTION
PACKAGE NO. 173: 72 PIN ZIP
.032
E
NOT R
.060
MAX.
RN
FO
D
E
D
EN
COMM
.022
.018
S
IGN
S
E
D
EW
3.865 MAX.
.032
0.600
MAX.
.100
TYP.
.100 TYP.
.050 TYP.
.273
MAX.
PACKAGE NO. 174: 72 LEAD SIMM
.125 DIA. TYP.
(2 PLCS.)
4.255 MAX.
3.984
.213
MAX.
1.992
.625 MAX.
.250
P1
.050 TYP.
R.062
.250
R.062
2.045
.400
.125
MIN.
3.730
ALL DIMENSIONS ARE IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI8F32512C
PART NUMBERING GUIDE
EDI 8 F 32 512 C 20 MM C -G
PREFIX
PRODUCT GROUP
8 = SRAM
SUBSTRATE
F = FR4 with Tin Lead Contacts
G = FR4 with Gold Contacts
DATA BUS WIDTH
32 = 32 Bit
DENSITY
512 = 512K
TECHNOLOGY
C = CMOS (5.0V)
SPEED
15 = 15ns
20 = 20ns
25 = 25ns
PACKAGE
MM = Straight SIMM
MZ = ZIP
TEMPERATURE RANGE
C = Commercial 0°C to +70°C
I = Industrial
-40°C to +85°C
G = RoHS COMPLIANT
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
EDI8F32512C
Document Title
512Kx32 Static Ram CMOS, High Speed Module
Revision History
Rev #
Rev 9
History
Release Date
Status
9.1 Added RoHS compliance option
March 2006
Final
9.2 Offer vendor source control
9.3 Provide industrial temperature option
9.4 Added part number guide
9.5 Added document title page
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 9
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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