DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP64-03 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 27 Philips Semiconductors Product specification Silicon PIN diode BAP64-03 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF attenuators and switches 1 cathode • Low diode capacitance 2 anode • Low diode forward resistance • Low series inductance • For applications up to 3 GHz. handbook, halfpage 1 2 APPLICATIONS • RF attenuators and switches. MAM406 DESCRIPTION Marking code: A3. Planar PIN diode in a SOD323 very small plastic SMD package. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 175 V IF continuous forward current − 100 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 1999 Aug 27 Ts = 90 °C 2 Philips Semiconductors Product specification Silicon PIN diode BAP64-03 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse current VR = 175 V − 10 µA VR = 20 V − 1 µA Cd rD diode capacitance diode forward resistance τL charge carrier life time LS series inductance VR = 0; f = 1 MHz 0.48 − pF VR = 1 V; f = 1 MHz 0.35 − pF VR = 20 V; f = 1 MHz 0.23 0.35 pF IF = 0.5 mA; f = 100 MHz; note 1 20 40 Ω IF = 1 mA; f = 100 MHz; note 1 10 20 Ω IF = 10 mA; f = 100 MHz; note 1 2 3.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA 1.55 − µs 1.68 − nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 1999 Aug 27 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 120 K/W Philips Semiconductors Product specification Silicon PIN diode BAP64-03 GRAPHICAL DATA MCD773 102 handbook, halfpage MCD774 500 Cd handbook, halfpage rD (Ω) (fF) 400 10 300 200 1 100 10−1 10−1 10 1 IF (mA) 0 102 4 0 f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. MCD775 0 12 16 20 VR (V) f = 100 MHz; Tj = 25 °C. handbook, halfpage S 2 8 Diode capacitance as a function of reverse voltage; typical values. MCD776 0 handbook, halfpage (1) 21 (dB) −1 (2) S21 2 (dB) (3) −10 (4) −2 −3 −20 −4 −5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) −30 0.5 3 2 2.5 3 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Insertion loss (|S21|2) of the diode as a function of frequency; typical values. 1999 Aug 27 1.5 f (GHz) Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.4 1 Fig.5 4 Isolation (|S21|2) of the diode as a function of frequency; typical values. Philips Semiconductors Product specification Silicon PIN diode BAP64-03 PACKAGE OUTLINE SOD323 Plastic surface mounted package; 2 leads A A1 , Q c Lp v M A HE A D 1 E bp 2 (1) 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp mm 1.1 0.8 + 0.05 − 0.05 0.40 0.25 c D E HE Lp Q v 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOD323 1999 Aug 27 EUROPEAN PROJECTION ISSUE DATE 98-09-14 5 Philips Semiconductors Product specification Silicon PIN diode BAP64-03 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 27 6 Philips Semiconductors Product specification Silicon PIN diode BAP64-03 NOTES 1999 Aug 27 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125004/04/pp8 Date of release: 1999 Aug 27 Document order number: 9397 750 06279