HANBit HMF2M32B4V Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part No. HMF2M32B4V GENERAL DESCRIPTION The HMF2M32B4V is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 72-pin SO-DIMM type, single - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES PIN ASSIGNMENT w Access time: 70, 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 Vss 21 DQ15 41 DQ29 61 A8 42 DQ30 62 A7 43 DQ31 63 A6 44 NC 64 A5 65 A4 66 A3 w Single + 3.0V ± 0.5V power supply 2 /RESET 22 w All in/outputs are LVTTL-compatible 3 DQ0 23 w FR4-PCB design 4 DQ1 24 NC (/CE_4L) NC (/CE_3H) DQ16 NC (/CE_4H) NC (/CE_3H) w Minimum 1,000,000 write/erase cycle 5 DQ2 25 DQ17 45 w Sector erases architecture 6 DQ3 26 DQ18 46 7 DQ4 27 DQ19 47 A19 67 A2 8 DQ5 28 DQ20 48 /OE 68 A1 OPTIONS MARKING w Timing 9 DQ6 29 DQ21 49 /WE 69 A0 70ns access -70 10 Vcc 30 Vcc 50 A18 70 A20 80ns access -80 11 DQ7 31 DQ22 51 A17 71 NC 90ns access -90 12 /CE_1L 32 DQ23 52 A16 72 Vss 120ns access -120 13 /CE_2L 33 /CE_1H 53 A15 14 DQ8 34 /CE_2H 54 A14 15 DQ9 35 DQ24 55 A13 16 DQ10 36 DQ25 56 A12 17 DQ11 37 DQ26 57 A11 18 DQ12 38 DQ27 58 A10 19 DQ13 39 Vss 59 Vcc 20 DQ14 40 DQ28 60 A9 w Packages 72-pin SO-DIMM URL :www.hbe.co.kr REV.02(August,2002) B 1 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V FUNCTIONAL BLOCK DIAGRAM 32 DQ0 - DQ31 20 A0 – A19 A0-19 DQ 0-15 /WE /OE /CE_IL U1 /CE RY-BY /Reset A0-19 DQ 15-31 /WE /OE U3 /CE /CE_IH RY-BY /Reset A0-19 DQ 0-15 /WE /OE /CE_2L U2 /CE RY-BY /Reset A0-19 DQ 15-31 /WE /WE /OE /CE_2H /OE /RY_BY RY-BY /RESET /Reset URL :www.hbe.co.kr REV.02(August,2002) U4 /CE 2 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not i mplied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 2.7V Ground VSS 0 TYP. MAX 3.6V 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT Input Load Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, V OUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL /CE = VIL, 5MHZ Vcc Active Read Current (1) V 0.45 1MHZ Vcc Active Write Current (2) /CE = VIL, /OE=VIH ICC2 Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 Low Vcc Lock-Out Voltage VLKO V 18 32 4 8 40 60 mA 60 mA 2.5 V ICC1 /OE = VIH, Notes: 2.4 mA 2.3 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL :www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time UNIT TYP. MAX. 0.7 15 - Chip Erase Time COMMENTS sec 25 Excludes 00H programming prior to erasure sec Byte Programming Time - 9 300 µs Chip Programming Time - 18 54 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN PARAMETER DESCRIPTION TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS Speed Options DESCRIPTION TEST SETUP UNIT JEDEC STANDARD tAVAV tRC Read Cycle Time -70R -80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns tAVQV tACC Address to Output Delay /CE = V IL /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 30 30 35 35 ns tEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns tGHQZ tDF Max 25 25 30 30 ns tAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 ns TEST SPECIFICATIONS TEST CONDITION 70R, 80 Output load 90, 120 UNIT 100 pF 1TTL gate Output load capacitance,CL (Including jig capacitance) 30 Input rise and full times 5 ns 0.0-3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels URL :www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 70R 80 90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 35 35 50 ns Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL :www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD -70R -80 -90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec 35 35 35 50 ns Notes : 1. This does not include the preprogramming ti me 2 . This timing is only for Sector Protect operations u READ OPERATIONS TIMING URL :www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V u RESET TIMING u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes URL :www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V Alternate /CE Controlled Writes u CHIP/BLOCK ERASE OPERATION TIMINGS URL :www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION URL :www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION URL :www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V PACKAGE DIMENSIONS <TOP VIEW> 2.2 mm MAX 1.0 ± 0.1mm URL :www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF2M32B4V ORDERING INFORMATION Part Number Density Org. Package HMF2M32B4V-70 8MByte 2Mx 32 72Pin – SODIMM HMF2M32B4V-80 8MByte 2Mx 32 HMF2M32B4V-90 8MByte HMF2M32B4V-120 8MByte URL :www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 3.3V 70ns 72Pin – SODIMM 4EA 3.3V 80ns 2Mx 32 72Pin – SODIMM 4EA 3.3V 90ns 2Mx 32 72Pin – SODIMM 4EA 3.3V 120ns 12 Number HANBit Electronics Co., Ltd.