CEL NE5510179A 3.5 v operation silicon rf power mosfet for 1.9 ghz transmission amplifier Datasheet

PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON
RF POWER MOSFET FOR 1.9 GHZ NE5510179A
TRANSMISSION AMPLIFIERS
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• HIGH OUTPUT POWER: 29.5 dBm TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
PACKAGE OUTLINE 79A
• HIGH LINEAR GAIN: 11 dB TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm
1.5 – 0.2
4.2 Max
Source
• HIGH POWER ADDED EFFICIENCY: 50% TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
Drain
1.0 Max
1.2 Max
Gate
4.4 Max
0.8 – 0.15
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
Drain
8
5.7 Max
0.6 – 0.15
• SINGLE SUPPLY: 2.8 to 6.0 V
X
Source
Gate
0.4 – 0.15
0.8 Max
5.7 Max
0.9 – 0.2
0.2 – 0.1
3.6 – 0.2
DESCRIPTION
APPLICATIONS
The NE5510179A is an N-Channel silicon power MOSFET
specially designed as the transmission driver amplifier for 3.5
V GSM1800 and GSM 1900 handsets. Dies are manufactured
using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate
lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.5 dBm output power with 50% power
added efficiency at 1.9 GHz under the 3.5 V supply voltage,
or can deliver 29 dBm output power at 2.8 V by varying the
gate voltage as a power control function.
• DIGITAL CELLULAR PHONES:
3.5 V GSM 1800/GSM 1900 Class 1 Handsets
ELECTRICAL CHARACTERISTICS (TA
= 25°C)
PART NUMBER
NE5510179A
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
• OTHERS:
1.6 - 2.0 GHz TDMA Applications
79A
UNITS
MIN
TYP
MAX
TEST CONDITIONS
VGSS = 6.0 V
IGSS
Gate-to-Source Leakage Current
nA
100
IDSS
Drain-to-Source Leakage Current
nA
100
VDSS = 8.5 V
VTH
Gate Threshold Voltage
V
2.0
VDS = 3.5 V, IDS = 1 mA
Transconductance
S
gm
RDS (ON)
BVDSS
1.0
Drain-to-Source On Resistance
Drain-to-Source Breakdown Voltage
V
20
1.35
0.82
VDS = 3.5 V, IDS1 = 300 mA, IDS2 = 500 mA
0.5
VGS = 6.0 V, VDS = 0.5 V
24
IDSS = 10 A
California Eastern Laboratories
NE5510179A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
SYMBOLS
PARAMETERS
UNITS
RATINGS
PARAMETERS
UNITS
TYP
MAX
VDS
Drain Supply Voltage
V
8.5
VDS
Drain to Supply Voltage
V
3.5
6.0
VGS
Gate Supply Voltage
V
6
VGS
Gate Supply Voltage
V
2.0
2.5
A0.5
IDS
Drain Current (Pulse Test)1
A
–
0.5
1.0
PIN
Input Power2
dBm
22
23
ID
Drain Current (continuous)
ID
Test)2
Drain Current (Pulse
A
PIN
Input
dBm
27
freq
Operating Frequency Range
GHz
–
2.0
PT
Total Power Dissipation
W
1.6
TOP
Operating Temperature
°C
25
85
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-55 to +125
Power3
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1ms.
3. Freq = 1.9 GHz, VDS = 3.5 V.
Note:
1. Duty Cycle 50%, Ton = 1ms.
2. Freq = 1.9 GHz, VDS = 3.5 V.
ORDERING INFORMATION1
PART NUMBER
QTY
NE5510179A-T1
1 K/Reel
Note:
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
1. Embossed tape 12 mm wide. Gate pin face to perforations side
of the tape.
DRAIN CURRENT vs.
DRAIN TO SOURCE CURRENT
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
6.0
1000
VGS (MAX) = 10 V,
Step = 1.0 V
VDS = 3.5 V
Drain Current, IDQ (mA)
Drain Current, ID (A)
5.0
4.0
3.0
2.0
100
10
1
1.0
0.0
0
0
2
4
6
8
10
12
14
Drain to Source Current, VDS (V)
16
1.0
1.5
2.0
2.5
Gate to Source Voltage, VGS (V)
3.0
NE5510179A
21
750
16
ID
500
100
250
50
0
0
η
11
ηADD
6
0
5
10
15
20
25
1000
POUT
29
750
IDS
28
0.0
1.0
2.0
3.0
1000
POUT
VDS = 2.8 V,
IDQ = 200 mA,
freq = 1.9 GHz
750
15
500
ID
100
η
250
10
50
ηADD
0
0
5
10
15
20
0
25
30
30
50
0
4.0
0
1250
29
VDS = 2.8 V,
freq = 1.9 GHz,
PIN = 22 dBm
1000
POUT
28
750
Ids
27
500
100
250
50
η
26
ηADD
APC
25
0.0
Input Power, PIN (dBm)
250
PMAX = 29.0 dBm
Output Power, POUT (dBm)
25
100
ηADD
APC
26
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. GATE TO SOURCE
VOLTAGE
1250
500
η
27
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. INPUT POWER
Drain Current, IDS (mA)
Output Power, POUT (dBm)
VDS = 3.5 V,
freq = 1.9 GHz,
PIN = 22 dBm
Gate to Source Voltage, VGS (V)
PO = 28.7 dBm
5
PMAX = 30.1 dBm
30
Input Power, PIN (dBm)
30
20
1250
Efficiency, Power Added Efficiency, η, ηADD%
POUT
VDS = 3.5 V,
IDQ = 200 mA,
freq = 1.9 GHz
31
Output Power, POUT (dBm)
1000
Efficiency, Power Added Efficiency, η, ηADD%
Output Power, POUT (dBm)
PO = 29.7 dBm
26
Efficiency, Power Added Efficiency, η, ηADD%
1250
Drain Current, IDS (mA)
31
1.0
2.0
3.0
0
4.0
0
Gate to Source Voltage, VGS (V)
P.C.B. LAYOUT1 (Units in mm)
4.0
1.7
0.5
1.0
Gate
1.2
5.9
Drain
Source
Through hole φ 0.2 × 33
0.5
0.5
6.1
Note:
1. Use rosin or other material to prevent solder from penetrating
through-holes.
Efficiency, Power Added Efficiency, η, ηADD%
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. GATE TO SOURCE
VOLTAGE
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. INPUT POWER
Drain Current, IDS (mA)
(TA = 25°C)
Drain Current, IDS (mA)
TYPICAL PERFORMANCE CURVES
NE5510179A
TYPICAL SCATTERING PARAMETERS1 (TA = 25°C)
Note:
1. This file and many other s-parameter files can be downloaded from www.cel.com
NE5510179A
VDS = 3.5 V, IDS = 200 mA
FREQUENCY
S11
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
MAG
0.83
0.80
0.80
0.81
0.82
0.82
0.83
0.85
0.85
0.86
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.90
0.91
0.91
0.91
0.92
0.91
0.91
0.92
0.91
0.92
0.92
0.92
S21
ANG
-121.10
-148.10
-158.20
-163.40
-166.80
-169.40
-171.40
-173.40
-175.00
-176.70
-178.40
180.00
178.00
176.50
174.90
172.90
170.90
169.30
167.00
165.10
162.20
160.80
158.30
156.10
153.50
151.50
149.10
147.10
145.00
142.90
MAG
13.84
7.49
4.96
3.67
2.90
2.32
1.96
1.63
1.43
1.23
1.10
0.96
0.86
0.78
0.71
0.65
0.57
0.54
0.49
0.47
0.42
0.39
0.35
0.35
0.31
0.30
0.26
0.27
0.24
0.24
S12
ANG
111.30
93.60
84.60
77.10
71.20
66.20
61.70
57.30
52.60
50.30
46.20
44.30
39.90
38.10
34.20
33.30
29.90
27.10
24.40
23.80
20.50
19.10
15.20
13.40
13.00
12.20
9.50
4.80
6.40
4.80
MAG
0.03
0.03
0.03
0.03
0.03
0.02
0.02
0.02
0.02
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.01
0.00
0.01
K
MAG1
-0.13
-0.12
-0.04
0.07
0.10
0.24
0.34
0.38
0.50
0.59
0.61
0.83
0.90
0.91
0.89
1.27
1.75
1.66
2.29
1.98
4.25
4.63
4.77
3.34
5.26
4.70
5.87
2.45
4.02
2.75
(dB)
26.50
23.60
21.80
20.60
19.60
19.00
18.60
18.00
17.80
17.30
17.20
17.00
16.80
16.60
16.20
13.50
11.40
12.20
10.50
11.10
8.60
8.50
7.90
8.30
7.00
6.60
5.00
7.60
5.30
6.60
S22
ANG
23.50
6.70
-2.60
-8.30
-13.30
-17.20
-18.30
-22.70
-24.60
-24.60
-29.30
-27.90
-28.10
-29.10
-31.70
-35.20
-28.20
-23.90
-23.00
-15.10
-3.70
-4.10
6.00
13.90
15.10
31.80
45.00
48.10
62.00
57.70
MAG
0.65
0.71
0.74
0.75
0.77
0.79
0.80
0.81
0.83
0.84
0.85
0.86
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.90
0.91
0.92
0.92
0.92
0.92
0.91
0.94
0.92
0.93
ANG
-154.00
-164.80
-168.50
-170.50
-171.60
-172.70
-173.40
-174.60
-175.50
-176.70
-177.50
-178.90
179.80
178.40
177.60
175.80
174.70
172.50
171.20
169.50
167.80
166.00
163.50
162.00
160.60
157.90
155.70
153.50
152.40
150.20
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K –
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
07/05/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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