PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS (Units in mm) • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm PACKAGE OUTLINE 79A • HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm 1.5 – 0.2 4.2 Max Source • HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm Drain 1.0 Max 1.2 Max Gate 4.4 Max 0.8 – 0.15 • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX Drain 8 5.7 Max 0.6 – 0.15 • SINGLE SUPPLY: 2.8 to 6.0 V X Source Gate 0.4 – 0.15 0.8 Max 5.7 Max 0.9 – 0.2 0.2 – 0.1 3.6 – 0.2 DESCRIPTION APPLICATIONS The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.5 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function. • DIGITAL CELLULAR PHONES: 3.5 V GSM 1800/GSM 1900 Class 1 Handsets ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE5510179A PACKAGE OUTLINE SYMBOLS CHARACTERISTICS • OTHERS: 1.6 - 2.0 GHz TDMA Applications 79A UNITS MIN TYP MAX TEST CONDITIONS VGSS = 6.0 V IGSS Gate-to-Source Leakage Current nA 100 IDSS Drain-to-Source Leakage Current nA 100 VDSS = 8.5 V VTH Gate Threshold Voltage V 2.0 VDS = 3.5 V, IDS = 1 mA Transconductance S gm RDS (ON) BVDSS 1.0 Drain-to-Source On Resistance Drain-to-Source Breakdown Voltage V 20 1.35 0.82 VDS = 3.5 V, IDS1 = 300 mA, IDS2 = 500 mA 0.5 VGS = 6.0 V, VDS = 0.5 V 24 IDSS = 10 A California Eastern Laboratories NE5510179A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) RECOMMENDED OPERATING CONDITIONS SYMBOLS SYMBOLS PARAMETERS UNITS RATINGS PARAMETERS UNITS TYP MAX VDS Drain Supply Voltage V 8.5 VDS Drain to Supply Voltage V 3.5 6.0 VGS Gate Supply Voltage V 6 VGS Gate Supply Voltage V 2.0 2.5 A0.5 IDS Drain Current (Pulse Test)1 A – 0.5 1.0 PIN Input Power2 dBm 22 23 ID Drain Current (continuous) ID Test)2 Drain Current (Pulse A PIN Input dBm 27 freq Operating Frequency Range GHz – 2.0 PT Total Power Dissipation W 1.6 TOP Operating Temperature °C 25 85 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 Power3 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1ms. 3. Freq = 1.9 GHz, VDS = 3.5 V. Note: 1. Duty Cycle 50%, Ton = 1ms. 2. Freq = 1.9 GHz, VDS = 3.5 V. ORDERING INFORMATION1 PART NUMBER QTY NE5510179A-T1 1 K/Reel Note: TYPICAL PERFORMANCE CURVES (TA = 25°C) 1. Embossed tape 12 mm wide. Gate pin face to perforations side of the tape. DRAIN CURRENT vs. DRAIN TO SOURCE CURRENT DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 6.0 1000 VGS (MAX) = 10 V, Step = 1.0 V VDS = 3.5 V Drain Current, IDQ (mA) Drain Current, ID (A) 5.0 4.0 3.0 2.0 100 10 1 1.0 0.0 0 0 2 4 6 8 10 12 14 Drain to Source Current, VDS (V) 16 1.0 1.5 2.0 2.5 Gate to Source Voltage, VGS (V) 3.0 NE5510179A 21 750 16 ID 500 100 250 50 0 0 η 11 ηADD 6 0 5 10 15 20 25 1000 POUT 29 750 IDS 28 0.0 1.0 2.0 3.0 1000 POUT VDS = 2.8 V, IDQ = 200 mA, freq = 1.9 GHz 750 15 500 ID 100 η 250 10 50 ηADD 0 0 5 10 15 20 0 25 30 30 50 0 4.0 0 1250 29 VDS = 2.8 V, freq = 1.9 GHz, PIN = 22 dBm 1000 POUT 28 750 Ids 27 500 100 250 50 η 26 ηADD APC 25 0.0 Input Power, PIN (dBm) 250 PMAX = 29.0 dBm Output Power, POUT (dBm) 25 100 ηADD APC 26 OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. GATE TO SOURCE VOLTAGE 1250 500 η 27 OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. INPUT POWER Drain Current, IDS (mA) Output Power, POUT (dBm) VDS = 3.5 V, freq = 1.9 GHz, PIN = 22 dBm Gate to Source Voltage, VGS (V) PO = 28.7 dBm 5 PMAX = 30.1 dBm 30 Input Power, PIN (dBm) 30 20 1250 Efficiency, Power Added Efficiency, η, ηADD% POUT VDS = 3.5 V, IDQ = 200 mA, freq = 1.9 GHz 31 Output Power, POUT (dBm) 1000 Efficiency, Power Added Efficiency, η, ηADD% Output Power, POUT (dBm) PO = 29.7 dBm 26 Efficiency, Power Added Efficiency, η, ηADD% 1250 Drain Current, IDS (mA) 31 1.0 2.0 3.0 0 4.0 0 Gate to Source Voltage, VGS (V) P.C.B. LAYOUT1 (Units in mm) 4.0 1.7 0.5 1.0 Gate 1.2 5.9 Drain Source Through hole φ 0.2 × 33 0.5 0.5 6.1 Note: 1. Use rosin or other material to prevent solder from penetrating through-holes. Efficiency, Power Added Efficiency, η, ηADD% OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. GATE TO SOURCE VOLTAGE OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. INPUT POWER Drain Current, IDS (mA) (TA = 25°C) Drain Current, IDS (mA) TYPICAL PERFORMANCE CURVES NE5510179A TYPICAL SCATTERING PARAMETERS1 (TA = 25°C) Note: 1. This file and many other s-parameter files can be downloaded from www.cel.com NE5510179A VDS = 3.5 V, IDS = 200 mA FREQUENCY S11 GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 MAG 0.83 0.80 0.80 0.81 0.82 0.82 0.83 0.85 0.85 0.86 0.87 0.88 0.88 0.89 0.89 0.90 0.90 0.91 0.90 0.91 0.91 0.91 0.92 0.91 0.91 0.92 0.91 0.92 0.92 0.92 S21 ANG -121.10 -148.10 -158.20 -163.40 -166.80 -169.40 -171.40 -173.40 -175.00 -176.70 -178.40 180.00 178.00 176.50 174.90 172.90 170.90 169.30 167.00 165.10 162.20 160.80 158.30 156.10 153.50 151.50 149.10 147.10 145.00 142.90 MAG 13.84 7.49 4.96 3.67 2.90 2.32 1.96 1.63 1.43 1.23 1.10 0.96 0.86 0.78 0.71 0.65 0.57 0.54 0.49 0.47 0.42 0.39 0.35 0.35 0.31 0.30 0.26 0.27 0.24 0.24 S12 ANG 111.30 93.60 84.60 77.10 71.20 66.20 61.70 57.30 52.60 50.30 46.20 44.30 39.90 38.10 34.20 33.30 29.90 27.10 24.40 23.80 20.50 19.10 15.20 13.40 13.00 12.20 9.50 4.80 6.40 4.80 MAG 0.03 0.03 0.03 0.03 0.03 0.02 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.00 0.01 K MAG1 -0.13 -0.12 -0.04 0.07 0.10 0.24 0.34 0.38 0.50 0.59 0.61 0.83 0.90 0.91 0.89 1.27 1.75 1.66 2.29 1.98 4.25 4.63 4.77 3.34 5.26 4.70 5.87 2.45 4.02 2.75 (dB) 26.50 23.60 21.80 20.60 19.60 19.00 18.60 18.00 17.80 17.30 17.20 17.00 16.80 16.60 16.20 13.50 11.40 12.20 10.50 11.10 8.60 8.50 7.90 8.30 7.00 6.60 5.00 7.60 5.30 6.60 S22 ANG 23.50 6.70 -2.60 -8.30 -13.30 -17.20 -18.30 -22.70 -24.60 -24.60 -29.30 -27.90 -28.10 -29.10 -31.70 -35.20 -28.20 -23.90 -23.00 -15.10 -3.70 -4.10 6.00 13.90 15.10 31.80 45.00 48.10 62.00 57.70 MAG 0.65 0.71 0.74 0.75 0.77 0.79 0.80 0.81 0.83 0.84 0.85 0.86 0.87 0.88 0.88 0.89 0.89 0.90 0.90 0.91 0.90 0.91 0.92 0.92 0.92 0.92 0.91 0.94 0.92 0.93 ANG -154.00 -164.80 -168.50 -170.50 -171.60 -172.70 -173.40 -174.60 -175.50 -176.70 -177.50 -178.90 179.80 178.40 177.60 175.80 174.70 172.50 171.20 169.50 167.80 166.00 163.50 162.00 160.60 157.90 155.70 153.50 152.40 150.20 Note: 1. Gain Calculation: MAG = |S21| |S12| (K – K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE