HUF75945G3, HUF75945P3, HUF75945S3ST
Data Sheet
December 2001
38A, 200V, 0.071 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-247
Features
SOURCE
DRAIN
GATE
• Ultra Low On-Resistance
- rDS(ON) = 0.071Ω, VGS = 10V
DRAIN
(TAB)
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
DRAIN
(FLANGE)
SOURCE
Symbol
D
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75945G3
TO-247
75945G
HUF75945P3
TO-220AB
75945P
HUF75945S3ST
TO-263AB
75945S
NOTE: When ordering, use the entire part number.
G
S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HUF75945G3,HUF75945P3,
HUF75945S3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
38
27
Figure 4
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
310
2.07
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
200
-
-
V
VDS = 190V, VGS = 0V
-
-
1
µA
VDS = 180V, VGS = 0V, TC = 150oC
-
-
250
µA
VGS = ±20V
-
-
±100
nA
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 10)
2
-
4
V
Drain to Source On Resistance
rDS(ON)
ID = 38A, VGS = 10V (Figure 9)
-
0.056
0.071
¾
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
TO-247, TO-220, TO-263
-
-
0.48
oC/W
Thermal Resistance Junction to
Ambient
RθJA
TO-247
-
-
30
oC/W
TO-220, TO-263
-
-
62
oC/W
VDD = 100V, ID = 38A
VGS = 10V,
RGS = 3.0Ω
(Figures 18, 19)
-
-
33
ns
-
15
-
ns
-
64
-
ns
td(OFF)
-
65
-
ns
tf
-
80
-
ns
tOFF
-
-
217
ns
-
215
280
nC
-
118
153
nC
-
8
10
nC
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
tON
td(ON)
tr
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Qg(TOT)
VGS = 0V to 20V
Gate Charge at 10V
Qg(10)
VGS = 0V to 10V
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
Total Gate Charge
VDD = 100V,
ID = 38A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Gate to Source Gate Charge
Qgs
-
15
-
nC
Gate to Drain “Miller” Charge
Qgd
-
42
-
nC
-
4023
-
pF
-
880
-
pF
-
240
-
pF
MIN
TYP
MAX
UNITS
ISD = 38A
-
-
1.25
V
ISD = 19A
-
-
1.00
V
trr
ISD = 38A, dISD/dt = 100A/µs
-
-
281
ns
QRR
ISD = 38A, dISD/dt = 100A/µs
-
-
2700
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
©2001 Fairchild Semiconductor Corporation
SYMBOL
VSD
TEST CONDITIONS
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
Typical Performance Curves
40
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
30
VGS = 10V
20
10
0.2
0
0
0
25
50
75
100
150
125
25
175
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t1
t2
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
IDM , PEAK CURRENT (A)
1000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
Typical Performance Curves
(Continued)
200
IAS , AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
500
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
100
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10ms
1
0.001
1
1
10
100
STARTING TJ = 25oC
STARTING TJ = 150oC
0.01
500
0.1
10
1
tAV, TIME IN AVALANCHE (ms)
VDS , DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
75
50
25
TJ = -55oC
TJ = 175oC
VGS = 10V
VGS = 5V
50
VGS = 4.5V
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
TJ = 25oC
0
2
3
4
0
5
0
1
VGS , GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
4
5
6
1.2
VGS = VDS, ID = 250µA
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
3
FIGURE 8. SATURATION CHARACTERISTICS
3.5
3.0
2
VDS , DRAIN TO SOURCE VOLTAGE (V)
2.5
2.0
1.5
1.0
1.0
0.8
0.6
0.5
VGS = 10V, ID = 38A
0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
200
0.4
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
Typical Performance Curves
(Continued)
10000
ID = 250µA
VGS = 0V, f = 1MHz
1.2
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.3
1.1
1.0
CISS = CGS + CGD
1000
COSS ≅ CDS + CGD
100
0.9
-80
-40
0
40
80
120
160
CRSS = CGD
30
0.1
200
1.0
TJ , JUNCTION TEMPERATURE (oC)
10
100 200
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VGS , GATE TO SOURCE VOLTAGE (V)
10
VDD = 100V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 38A
ID = 10A
2
0
0
20
40
60
80
100
120
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
BVDSS
L
VARY tP TO OBTAIN
REQUIRED PEAK IAS
tP
+
RG
-
VGS
VDS
IAS
VDD
VDD
DUT
0V
tP
IAS
0
0.01Ω
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
Test Circuits and Waveforms
(Continued)
VDS
VDD
RL
Qg(TOT)
VDS
VGS = 20V
VGS
Qg(10)
+
-
VDD
VGS = 10V
VGS
DUT
VGS = 2V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
VDS
tON
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
+
VGS
-
VDD
10%
0
10%
DUT
90%
RGS
VGS
VGS
0
FIGURE 18. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
10%
50%
50%
PULSE WIDTH
FIGURE 19. SWITCHING TIME WAVEFORM
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
PSPICE Electrical Model
.SUBCKT HUF75945 2 1 3 ;
rev 13 October 2000
CA 12 8 6.6e-9
CB 15 14 6.5e-9
CIN 6 8 3.80e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
LDRAIN
DPLCAP
DRAIN
2
5
10
5
51
ESLC
11
-
RDRAIN
6
8
EVTHRES
+ 19 8
+
LGATE
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
+
50
-
IT 8 17 1
EVTEMP
RGATE + 18 22
9
20
21
EBREAK
17
18
DBODY
-
16
MWEAK
6
MMED
MSTRO
RLGATE
LSOURCE
CIN
8
SOURCE
3
7
RSOURCE
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 5.0e-2
RGATE 9 20 0.77
RLDRAIN 2 5 10
RLGATE 1 9 80.5
RLSOURCE 3 7 58
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.8e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
DBREAK
+
RSLC2
ESG
LDRAIN 2 5 1.0e-9
LGATE 1 9 8.05e-9
LSOURCE 3 7 5.8e-9
RLDRAIN
RSLC1
51
EBREAK 11 7 17 18 221
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
RLSOURCE
S1A
12
S2A
14
13
13
8
S1B
CA
17
18
RVTEMP
S2B
13
CB
6
8
EGS
19
-
-
IT
14
+
+
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
RBREAK
15
VBAT
5
8
EDS
-
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*100),2.5))}
.MODEL DBODYMOD D (IS = 2.8e-12 RS = 3.0e-3 XTI = 5.5 TRS1 = 3.5e-3 TRS2 = 1e-5 CJO = 2.55e-9 TT = 1.52e-7 M = 0.42)
.MODEL DBREAKMOD D (RS = 1.2e- 0TRS1 = 1e- 3TRS2 = 1e-6)
.MODEL DPLCAPMOD D (CJO = 4.6e- 9IS = 1e-30 N = 10 M = 0.9)
.MODEL MMEDMOD NMOS (VTO = 3.05 KP = 2.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.77)
.MODEL MSTROMOD NMOS (VTO = 3.55 KP = 100 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.69 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.70 )
.MODEL RBREAKMOD RES (TC1 =1.27e- 3TC2 = 1.0e-6)
.MODEL RDRAINMOD RES (TC1 = 9.90e-3 TC2 = 3.60e-5)
.MODEL RSLCMOD RES (TC1 = 3.0e-3 TC2 = 1.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.90e-3 TC2 = -1.10e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.80e- 3TC2 = 1.70e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -5.5 VOFF= -4.5)
VON = -4.5 VOFF= -5.5)
VON = -0.3 VOFF= 0.4)
VON = 0.4 VOFF= -0.3)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
SABER Electrical Model
REV 13 October 2000
template huf75945 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 2.8e-12, rs = 3.0e-3, xti = 5.5, trs1 = 3.5e-3, trs2 = 1.0e-5, cjo = 2.55e-9, tt = 1.52e-7, m = 0.42)
dp..model dbreakmod = (rs = 1.2, trs1 = 1.0e-3, trs2 = 1.0e-6)
dp..model dplcapmod = (cjo = 4.6e-9, isl = 10e-30, nl=10, m = 0.9)
m..model mmedmod = (type=_n, vto = 3.05, kp = 2.5, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.55, kp = 100, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.69, kp = 0.05, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.5, voff = -4.5)
DPLCAP 5
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -4.5, voff = -5.5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.3, voff = 0.4)
10
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.4, voff = -0.3)
DRAIN
2
RLDRAIN
RSLC1
51
c.ca n12 n8 = 6.6e-9
c.cb n15 n14 = 6.5e-9
c.cin n6 n8 = 3.8e-9
RSLC2
ISCL
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
RDRAIN
6
8
ESG
i.it n8 n17 = 1
LGATE
GATE
1
EVTHRES
+ 19 8
EVTEMP
RGATE + 18 22
9
20
21
11
DBODY
16
MWEAK
6
EBREAK
+
17
18
MMED
MSTRO
RLGATE
CIN
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1.27e-3, tc2 = 1.00e-6
res.rdrain n50 n16 = 5.0e-2, tc1 = 9.9e-3, tc2 =3.6e-5
res.rgate n9 n20 = 0.77
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 80.5
res.rlsource n3 n7 = 58
res.rslc1 n5 n51= 1e-6, tc1 = 3e-3, tc2 = -1.0e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.8e-3, tc1 = 1.0e-3, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.8e-3, tc2 = 1.70e-6
res.rvthres n22 n8 = 1, tc1 = -2.9e-3, tc2 = 1.1e-5
DBREAK
50
+
l.ldrain n2 n5 = 1.00e-9
l.lgate n1 n9 = 8.05e-9
l.lsource n3 n7 = 5.80e-9
LDRAIN
-
8
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
S1A
12
S2A
S1B
CA
RBREAK
15
14
13
13
8
17
18
RVTEMP
S2B
13
CB
+
+
6
8
EGS
-
19
-
IT
14
VBAT
5
8
EDS
-
+
8
22
RVTHRES
spe.ebreak n11 n7 n17 n18 = 221
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6*100))** 2.5))
}
}
©2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
SPICE Thermal Model
th
REV 13 October 2000
JUNCTION
HUF75945T
CTHERM1 th 6 6.45e-3
CTHERM2 6 5 3.00e-2
CTHERM3 5 4 1.40e-2
CTHERM4 4 3 1.65e-2
CTHERM5 3 2 4.85e-2
CTHERM6 2 tl 1.00e-1
RTHERM1 th 6 3.24e-3
RTHERM2 6 5 8.08e-3
RTHERM3 5 4 2.28e-2
RTHERM4 4 3 1.00e-1
RTHERM5 3 2 1.10e-1
RTHERM6 2 tl 1.40e-1
SABER Thermal Model
CTHERM1
RTHERM1
6
CTHERM2
RTHERM2
5
CTHERM3
RTHERM3
SABER thermal model HUF75945T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.45e-3
ctherm.ctherm2 6 5 = 3.00e-2
ctherm.ctherm3 5 4 = 1.40e-2
ctherm.ctherm4 4 3 = 1.65e-2
ctherm.ctherm5 3 2 = 4.85e-2
ctherm.ctherm6 2 tl = 1.00e-1
rtherm.rtherm1 th 6 = 3.24e-3
rtherm.rtherm2 6 5 = 8.08e-3
rtherm.rtherm3 5 4 = 2.28e-2
rtherm.rtherm4 4 3 = 1.00e-1
rtherm.rtherm5 3 2 = 1.10e-1
rtherm.rtherm6 2 tl = 1.40e-1
}
4
CTHERM4
RTHERM4
3
CTHERM5
RTHERM5
2
CTHERM6
RTHERM6
tl
©2001 Fairchild Semiconductor Corporation
CASE
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
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Rev. H4