MUR105S THRU MUR1100S ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER Voltage: 50 to 1000V Current: 1.0A FEATURE DO – 41\DO – 204AL Low power loss High surge capability Glass passivated chip junction Ultra-fast recovery time for high efficiency High temperature soldering guaranteed 250℃/10sec/0.375″lead length at 5 lbs tension MECHANICAL DATA Terminal：Plated axial leads solderable per MIL-STD 202E, method 208C Case：Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity：color band denotes cathode Mounting position：any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated, for capacitive load, derate current by 20%) Symbol MUR 105S MUR 110S MUR 120S MUR 130S MUR 140S MUR 160S MUR 180S MUR 1100S units Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage Vrms 35 70 140 210 280 420 560 700 V Maximum DC blocking Voltage Vdc 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current 3/8" lead length at Ta =55°C Peak Forward Surge Current 8.3ms single Half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage at Rated forward current Maximum DC Reverse Current Ta =25°C At rated DC blocking voltage Ta =125°C If(av) 1.0 A Ifsm 35.0 A Maximum Reverse Recovery Time (Note 1) Trr Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 3) Rth(ja) Storage and Temperature Junction Operating Vf 0.875 1.25 10.0 100.0 Ir Tstg, Tj 1.75 25 µA 50 75 25 27 Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted nS pF 50 -55 to +150 V ℃ /W °C Rev.A2 www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES MUR120S THRU MUR1100S Rev.A2 www.gulfsemi.com