TI1 LM7372MR/NOPB Lm7372 high speed, high output current, dual operational amplifier Datasheet

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LM7372
SNOS926F – MAY 1999 – REVISED SEPTEMBER 2014
LM7372 High Speed, High Output Current, Dual Operational Amplifier
1 Features
3 Description
The LM7372 is a high speed dual voltage feedback
amplifier with the slewing characteristic of current
feedback amplifiers. However, it can be used in all
traditional voltage feedback amplifier configurations.
−80 dBc Highest Harmonic Distortion @1 MHz,
2VPP
Very High Slew Rate: 3000 V/µs
Wide Gain Bandwidth Product: 120 MHz
−3 dB Frequency @ AV = +2: 200 MHz
Low Supply Current: 13 mA (both amplifiers)
High Open Loop Gain: 85 dB
High Output Current: 150 mA
Differential Gain and Phase: 0.01%, 0.02°
•
1
•
•
•
•
•
•
•
The LM7372 is stable for gains as low as +2 or −1. It
provides a very high slew rate at 3000 V/µs and a
wide gain bandwidth product of 120 MHz, while
consuming only 6.5 mA/per amplifier of supply
current. It is ideal for video and high speed signal
processing applications such as xDSL and pulse
amplifiers. With 150 mA output current, the LM7372
can be used for video distribution, as a transformer
driver or as a laser diode driver.
2 Applications
•
•
•
•
•
•
HDSL and ADSL Drivers
Multimedia Broadcast Systems
Professional Video Cameras
CATV/Fiber Optics Signal Processing
Pulse Amplifiers and Peak Detectors
HDTV Amplifiers
Operation on ±15 V power supplies allows for large
signal swings and provides greater dynamic range
and signal-to-noise ratio. The LM7372 offers high
SFDR and low THD, ideal for ADC/DAC systems. In
addition, the LM7372 is specified for ±5 V operation
for portable applications.
The LM7372 is built on TI's Advance VIP™ III
(Vertically integrated PNP) complementary bipolar
process.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM7372
DDA (8)
4.90 mm × 3.91 mm
LM7372
D (16)
9.90 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Harmonic Distortion vs Frequency
Single Supply Application (16-Pin SOIC)
-50
VCC
5
+ VIN
VCC
4
14
C6
0.1uF
+
1/2
LM7372
-
3
R9
50
R3
5.1k
R1
10.2k
C7
20uF
1:1
R5
2k
R6
2k
+
C3
47uF
R7
2k
R4
5.1k
C2
0.1uF
- VIN
100
R2
10.2k
12
11
Twisted
Pair Line
R8
50
HARMONIC DISTORTION (dBc)
VS = ±12V
+
C1
0.1uF
AV = 2
VO = 2VP-P
-70
HD2
RL = 100
HD3
-90
-110
1/2
LM7372
+
13
6
100k
1M
10M
FREQUENCY (Hz)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM7372
SNOS926F – MAY 1999 – REVISED SEPTEMBER 2014
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Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
4
4
4
4
5
6
6
7
8
Absolute Maximum Ratings ......................................
Handling Ratings.......................................................
Recommended Operating Conditions (1) ...................
Thermal Information ..................................................
±15V DC Electrical Characteristics ..........................
±15V AC Electrical Characteristics ..........................
±5V DC Electrical Characteristics ............................
±5V AC Electrical Characteristics ............................
Typical Performance Characteristics ........................
7
Detailed Description ............................................ 12
8
Application and Implementation ........................ 13
7.1 Functional Block Diagram ....................................... 12
8.1 Application Information............................................ 13
8.2 Typical Application .................................................. 13
8.3 Application Details................................................... 14
9 Power Supply Recommendations...................... 20
10 Layout................................................................... 21
10.1 Layout Guidelines ................................................. 21
11 Device and Documentation Support ................. 21
11.1 Trademarks ........................................................... 21
11.2 Electrostatic Discharge Caution ............................ 21
11.3 Glossary ................................................................ 21
12 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (March 2013) to Revision F
Page
•
Changed data sheet structure and organization. Added, updated, or renamed the following sections: Device
Information Table, Pin Configuration and Functions, Application and Implementation; Device and Documentation
Support; Mechanical, Packaging, and Ordering Information.................................................................................................. 1
•
Changed "Junction Temperature Range" to "Operating Temperature Range" ...................................................................... 4
•
Deleted TJ = 25°C for Electrical Characteristics tables .......................................................................................................... 5
Changes from Revision D (March 2013) to Revision E
•
2
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 21
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SNOS926F – MAY 1999 – REVISED SEPTEMBER 2014
5 Pin Configuration and Functions
NOTE
For SO PowerPAD package the exposed pad should be tied either to V− or left electrically
floating. Die attach material is conductive and is internally tied to V−.
* Heatsink Pins. (1)
Package DDA
8-Pin SO PowerPAD
Top View
1
Package D
16-Pin SOIC
Top View
+
8
*
V
OUT A
16
1
NC 2
*
15 NC
A
-
2
+
OUT A 3
7
OUT B
-IN A
14 V+
A
-
+
13 OUT B
-IN A 4
+IN A
3
+
12 -IN B
+IN A 5
6
-IN B
B
B
V- 6
-
+
NC 7
4
-
V
5
-
11 +IN B
10 NC
+IN B
*
9
8
*
Pin Functions
PIN
NAME
NUMBER
I/O
DESCRIPTION
DDA
D
*
––
1,8,9,16
––
-IN A
2
4
I
ChA Inverting Input
+IN A
3
5
I
ChA Non-inverting Input
-IN B
6
12
I
ChB Inverting Input
+IN B
5
11
I
ChB Non-inverting Input
NC
––
2, 7, 10, 15
––
No Connection
OUT A
1
3
O
Output A
OUT B
7
13
O
Output B
Heatsink Pin
-
V
4
6
I
Negative Supply
V+
8
14
I
Positive Supply
(1)
The maximum power dissipation is a function of T(JMAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (T(JMAX) – TA)/RθJA. All numbers apply for packages soldered directly into a PC board. The value for RθJA is
106°C/W for the 16-Pin SOIC package. With a total area of 4sq. in of 1oz CU connected to pins 1,6,8,9 & 16, RθJA for the 16-Pin SOIC
is decreased to 70°C/W. 8-Pin SO PowerPAD package RθJA is with 2 in2 heatsink (top and bottom layer each) and 1 oz. copper (see
Table 2 and Application and Implementation )
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SNOS926F – MAY 1999 – REVISED SEPTEMBER 2014
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6 Specifications
6.1 Absolute Maximum Ratings (1) (2) (3)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
MAX
UNIT
36
V
±10
V
Suppy Voltage (V+−V−)
Differential Input Voltage (VS = ±15V)
Output Short Circuit to Ground (2)
Continuous
Infrared or Convection Reflow (20 sec.)
Soldering Information
Wave Soldering Lead Temperature (10 sec.)
Input Voltage
Maximum Junction Temperature (4)
(1)
(2)
(3)
(4)
235
°C
260
°C
V− to V+
V
150
°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
The maximum power dissipation is a function of T(JMAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (T(JMAX) – TA)/RθJA. All numbers apply for packages soldered directly into a PC board. The value for RθJA is
106°C/W for the 16-Pin SOIC package. With a total area of 4sq. in of 1oz CU connected to pins 1,6,8,9 & 16, RθJA for the 16-Pin SOIC
is decreased to 70°C/W. 8-Pin SO PowerPAD package RθJA is with 2 in2 heatsink (top and bottom layer each) and 1 oz. copper (see
Table 2 and Application and Implementation )
6.2 Handling Ratings
MIN
Tstg
V(ESD)
(1)
(2)
(3)
−65
Storage temperature range
Electrostatic discharge (1)
MAX
UNIT
150
°C
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins (2)
1500
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins (3)
200
V
For testing purposes, ESD was applied using human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω in series with 200pF.
JEDEC document JEP155 states that 1500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 200-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions (1)
over operating free-air temperature range (unless otherwise noted)
Supply Voltage
Operating Temperature Range
(1)
MIN
MAX
9
36
UNIT
V
−40
85
°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
6.4 Thermal Information
THERMAL METRIC (1)
RθJA
(1)
(2)
4
Junction-to-ambient thermal resistance
DDA
8 PINS
106
D
(2)
16 PINS (2)
47
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The maximum power dissipation is a function of T(JMAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (T(JMAX) – TA)/RθJA. All numbers apply for packages soldered directly into a PC board. The value for RθJA is
106°C/W for the 16-Pin SOIC package. With a total area of 4sq. in of 1oz CU connected to pins 1,6,8,9 & 16, RθJA for the 16-Pin SOIC
is decreased to 70°C/W. 8-Pin SO PowerPAD package RθJA is with 2 in2 heatsink (top and bottom layer each) and 1 oz. copper (see
Table 2 and Application and Implementation )
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6.5
SNOS926F – MAY 1999 – REVISED SEPTEMBER 2014
±15V DC Electrical Characteristics
Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER
TEST CONDITIONS
MIN (1)
TYP (2)
MAX (1)
2.0
8.0
10.0
VOS
Input Offset Voltage
TC VOS
Input Offset Voltage Average Drift
IB
Input Bias Current
IOS
Input Offset Current
RIN
Input Resistance
RO
Open Loop Output Resistance
CMRR
Common Mode Rejection Ratio
VCM = ±10V
75
70
93
PSRR
Power Supply Rejection Ratio
VS = ±15V to ±5V
75
70
90
VCM
Input Common-Mode Voltage Range
CMRR > 60dB
AV
VO
Large Signal Voltage Gain
(3)
Output Swing
12
IS
(1)
(2)
(3)
µV/°C
2.7
10
12
µA
0.1
4.0
6.0
µA
40
MΩ
Differential Mode
3.3
MΩ
Ω
15
75
70
85
RL = 100Ω
70
66
81
13
12.7
13.4
−13
−12.7
−13.3
11.8
11.4
12.4
−11.2
−10.8
−11.9
RL = 1kΩ
dB
dB
±13
RL = 1kΩ
IOUT = 150mA
Output Short Circuit Current
mV
Common Mode
IOUT = − 150mA
ISC
UNIT
V
dB
dB
V
V
V
V
Sourcing
260
mA
Sinking
250
mA
Supply Current (both Amps)
13
17
19
mA
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametic norm.
Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For VS = ±15V, VOUT = ±
10V. For VS = ±5V, VOUT = ±2V
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SNOS926F – MAY 1999 – REVISED SEPTEMBER 2014
6.6
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±15V AC Electrical Characteristics
Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER
SR
Slew Rate
TEST CONDITIONS
(3)
MIN (1)
TYP (2)
AV = +2, VIN 13VP-P
3000
AV = +2, VIN 10VP-P
2000
Unity Bandwidth Product
MAX (1)
UNIT
V/µs
120
MHz
220
MHz
AVOL = 6dB
70
deg
AV = −1, AO = ±5V,
RL = 500Ω
50
AV = −2, VIN = ±5V,
RL = 500Ω
6.0
−3dB Frequency
AV = +2
φm
Phase Margin
tS
Settling Time (0.1%)
tP
Propagation Delay
AD
Differential Gain (4)
φD
Differential Phase (4)
hd2
Second Harmonic Distortion
FIN = 1MHz, AV = +2
hd3
IMD
ns
ns
0.01%
0.02
deg
VOUT = 2VP-P, RL = 100Ω
−80
dBc
VOUT = 16.8VP-P, RL = 100Ω
−73
dBc
Third Harmonic Distortion
FIN = 1MHz, AV = +2
VOUT = 2VP-P, RL = 100Ω
−91
dBc
VOUT = 16.8VP-P, RL = 100Ω
−67
dBc
Intermodulation Distortion
Fin 1 = 75kHz,
Fin 2 = 85kHz
VOUT = 16.8VP-P, RL = 100Ω
−87
dBc
en
Input-Referred Voltage Noise
f = 10kHz
14
nV/√Hz
in
Input-Referred Current Noise
f = 10kHz
1.5
pA/√Hz
(1)
(2)
(3)
(4)
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametic norm.
Slew Rate is the average of the rising and falling slew rates.
Differential gain and phase are measured with AV = +2, VIN = 1VPP at 3.58 MHz and output is 150Ω terminated.
6.7
±5V DC Electrical Characteristics
Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER
VOS
Input Offset Voltage
TC VOS
Input Offset Voltage Average Drift
IB
Input Bias Current
IOS
Input Offset Current
RIN
Input Resistance
TEST CONDITIONS
MIN (1)
TYP (2)
MAX (1)
2.2
8.0
10.0
12
µV/°C
10
12
µA
0.1
4
6
µA
Common Mode
40
MΩ
Differential Mode
3.3
MΩ
15
Ω
Open Loop Output Resistance
CMRR
Common Mode Rejection Ratio
VCM = ±2.5V
70
65
90
PSRR
Power Supply Rejection Ratio
VS = ±15V to ±5V
75
70
90
VCM
Input Common-Mode Voltage Range
CMRR > 60dB
AV
Large Signal Voltage Gain (3)
RL = 1kΩ
70
65
78
RL = 100Ω
64
60
72
6
mV
3.3
RO
(1)
(2)
(3)
UNIT
±3
dB
dB
V
dB
dB
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametic norm.
Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For VS = ±15V, VOUT = ±
10V. For VS = ±5V, VOUT = ±2V
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±5V DC Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER
VO
TEST CONDITIONS
Output Swing
RL = 1kΩ
IOUT = − 80mA
IOUT = 80mA
ISC
IS
6.8
Output Short Circuit Current
MIN (1)
TYP (2)
3.2
3.0
3.4
−3.2
−3.0
−3.4
2.5
2.2
2.8
−2.5
−2.2
−2.7
Sourcing
150
Sinking
150
Supply Current (both Amps)
12.4
MAX (1)
UNIT
V
V
V
V
mA
mA
16
18
mA
±5V AC Electrical Characteristics
Unless otherwise specified, all limits ensured for VCM = 0V and RL = 1kΩ. Boldface apply at the temperature extremes.
PARAMETER
SR
Slew Rate
(3)
TEST CONDITIONS
AV = +2, VIN 3VP-P
Unity Bandwidth Product
−3dB Frequency
AV = +2
MIN (1)
TYP (2)
MAX (1)
UNIT
700
V/µs
100
MHz
125
MHz
70
deg
φm
Phase Margin
tS
Settling Time (0.1%)
AV = −1, VO = ±1V, RL = 500Ω
70
ns
tP
Propagation Delay
AV = +2, VIN = ±1V, RL = 500Ω
7
ns
AD
Differential Gain (4)
φD
Differential Phase (4)
hd2
Second Harmonic Distortion
FIN = 1MHz, AV = +2
VOUT = 2VP-P, RL = 100Ω
−84
hd3
Third Harmonic Distortion
FIN = 1MHz, AV = +2
VOUT = 2VP-P, RL = 100Ω
−94
en
Input-Referred Voltage Noise
f = 10kHz
14
nV/√Hz
in
Input-Referred Current Noise
f = 10kHz
1.8
pA/√Hz
(1)
(2)
(3)
(4)
0.02%
0.03
deg
dBc
dBc
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametic norm.
Slew Rate is the average of the rising and falling slew rates.
Differential gain and phase are measured with AV = +2, VIN = 1VPP at 3.58 MHz and output is 150Ω terminated.
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6.9 Typical Performance Characteristics
-50
-30
VS = ±12V
AV = 2
HARMONIC DISTORTION (dBc)
HARMONIC DISTORTION (dBc)
VS = ±12V
VO = 2VP-P
-70
HD2
RL = 100
HD3
-90
-110
AV = 2
-50
RL = 100
HD2
-70
-90
-110
1M
100k
10M
1M
100k
FREQUENCY (Hz)
Figure 2. Harmonic Distortion vs Frequency
-30
-30
VS = ±12V
VS = ±12V
HARMONIC DISTORTION (dBc)
HARMONIC DISTORTION (dBc)
AV = 8
VO = 2VP-P
-50
HD2
RL = 100
-70
HD3
-90
HD3
AV = 8
VO = 16.8VP-P
-50
RL = 100
HD2
-70
-90
-110
1M
100k
100M
1M
100k
FREQUENCY (Hz)
10M
FREQUENCY (Hz)
Figure 3. Harmonic Distortion vs Frequency
Figure 4. Harmonic Distortion vs Frequency
-50
-40
VS = ±12V
VS = ±12V
AV = 8
AV = 8
RL = 100
f = 1MHz
RL = 100
f = 100kHz
-70
DISTORTION (dBc)
DISTORTION (dBc)
10M
FREQUENCY (Hz)
Figure 1. Harmonic Distortion vs Frequency
HD2
-90
HD3
-110
-60
HD2
-80
HD3
-100
1
10
20
1
OUTPUT VOLTAGE (VP-P)
10
20
OUTPUT VOLTAGE (VP-P)
Figure 5. Harmonic Distortion vs
8
HD3
VO = 16.8VP-P
Figure 6. Harmonic Distortion vs Output Level
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Typical Performance Characteristics (continued)
-50
VS = ±12V
VS = ±12V
AV = 2
AV = 2
RL = 100
f = 100kHZ
-80
DISTORTION (dBc)
DISTORTION (dBc)
-60
HD2
-100
RL = 100
f = 1MHZ
-70
HD2
-90
HD3
HD3
-110
-120
1
10
1
20
10
OUTPUT VOLTAGE (VP-P)
OUTPUT VOLTAGE (VP-P)
Figure 7. Harmonic Distortion vs Output Level
Figure 8. Harmonic Distortion vs Output Level
-40
-60
VS = ±12V
VS = ±12v
AV = 2
AV = 2
VO = 2VP-P
f = 100kHz
-80
-60
DISTORTION (dBc)
DISTORTION (dBc)
20
HD2
-100
VO = 2VP-P
f = 1MHz
-80
HD2
HD3
-100
HD3
-120
-120
10
100
1000
10
1000
LOAD RESISTANCE (:)
LOAD RESISTANCE (:)
Figure 9. Harmonic Distortion vs Load Resistance
-40
100
Figure 10. Harmonic Distortion vs Load Resistance
-40
VS = ±12V
VS = ±12V
AV = 8
-80
HD2
-100
VO = 2VP-P
f = 100kHz
-60
DISTORTION (dBc)
DISTORTION (dBc)
AV = 8
VO = 2VP-P
f = 1MHz
-60
-80
HD2
-100
HD3
HD3
-120
-120
10
100
1000
10
LOAD RESISTANCE (:)
100
1000
LOAD RESISTANCE (:)
Figure 11. Harmonic Distortion vs Load Resistance
Figure 12. Harmonic Distortion vs Load Resistance
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Typical Performance Characteristics (continued)
2
2
VS = ±12V
1
1
RL = 100
0
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
0
GAIN = +2
-1
-2
GAIN = +8
-3
-4
-1
GAIN = +2
-2
GAIN = +8
-3
-4
-5
-5
-6
-6
VS = ±15V
RL = 100
1
10
100
1
1000
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 13. Frequency Response
Figure 14. Frequency Response
2
VS = ±5V
VS = ±12V
RL = 100
AV = 2
OUTPUT VOLTAGE (100mV/div)
1
NORMALIZED GAIN (dB)
0
-1
GAIN = +2
-2
GAIN = +8
-3
-4
RL = 100
-5
-6
1
10
100
1000
TIME (100ns/div)
FREQUENCY (MHz)
Figure 16. Small Signal Pulse Response
Figure 15. Frequency Response
100
AV = 2
90
RL = 100
80
TJA (°C/W)
OUTPUT VOLTAGE (2V/div)
VS = ±12V
70
0.5 oz
60
1.0 oz
50
2.0 oz
40
30
20
0
TIME (100ns/div)
1.0
1.5
2.0
2.5
2
COPPER AREA (in )
Figure 17. Large Signal Pulse Response
10
0.5
Figure 18. Thermal Performance of 8ld-SO PowerPAD
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Typical Performance Characteristics (continued)
-50
3
VS = ±5V
VS = ±15V
2.5
VO = 2VP-P
-70
INPUT BIAS CURRENT (µA)
HARMONIC DISTORTION (dBc)
AV = 2
RL = 100
HD2
-90
HD3
2
1.5
1
0.5
0
-40
-110
100k
1M
10M
25
85
125
TEMPERATURE (°C)
FREQUENCY (Hz)
Figure 20. Input Bias Current (µA) vs Temperature
Figure 19. Harmonic Distortion vs Frequency
20
VS = ±15V
OUTPUT VOLTAGE (V)
POSITIVE OUTPUT
10
0
NEGATIVE OUTPUT
-10
-20
-200
-100
0
100
200
OUTPUT CURRENT (mA)
Figure 21. Output Voltage vs Output Current
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7 Detailed Description
7.1 Functional Block Diagram
M1
Q1
Q4
RE
IN
-
V
-
IN
+
OUTPUT
BUFFER
+
A
V
Q3
Q2
M2
Figure 22. Simplified Schematic Diagram
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LM7372 is a high speed dual operational amplifier with a very high slew rate and very low distortion. Like
many other op amps, it is used in conventional voltage feedback amplifier applications, and has a class AB
output stage in order to deliver high currents to low impedance loads. However, it draws a low quiescent supply
current in most situations since the supply current increases when necessary to keep up with large output swing
and/or high frequency (see High Frequency/Large Signal Swing Considerations). For most op amps in typical
applications, this topology means that internal power dissipation is rarely an issue, even with the trend to smaller
surface mount packages. However, TI has designed the LM7372 for applications where there are significant
levels of power dissipation, and a way to effectively remove the internal heat generated by this power dissipation
is needed in order to maintain the semiconductor junction temperature at acceptable levels. This is particularly
important in environments with elevated ambient temperatures.
8.2 Typical Application
V+
+
0.1uF
3
+ VIN
2
5.1k
0.1uF
8
20uF
+
1/2
LM7372
-
1
50
1:1
2k
Twisted
Pair Line
2k
100
2k
50
6
0.1uF
5
- VIN
1/2
LM7372
+
7
4
5.1k
V0.1uF
+
20uF
Figure 23. Split Supply Application (SO PowerPAD)
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Typical Application (continued)
VCC
+
C1
0.1uF
5
+ VIN
VCC
4
14
C6
0.1uF
+
1/2
LM7372
-
3
R9
50
R3
5.1k
R1
10.2k
C7
20uF
1:1
R5
2k
Twisted
Pair Line
R6
2k
+
C3
47uF
100
R7
2k
R2
10.2k
R4
5.1k
12
C2
0.1uF
11
- VIN
R8
50
1/2
LM7372
+
13
6
Figure 24. Single Supply Application (16-Pin SOIC)
8.3 Application Details
Several factors contribute to power dissipation and consequently higher semiconductor junction temperatures.
Understanding these factors is necessary if the LM7372 is to perform to the desired specifications. Since
different applications will have different dissipation levels and since there are various possible compromises
between the ways these factors will contribute to the total junction temperature, this section will examine the
typical application shown in Figure 24 as an example, and offer solutions when encountering excessive junction
temperatures.
There are two major contributors to the internal power dissipation. The first is the product of the supply voltage
and the LM7372 quiescent current when no signal is being delivered to the external load, and the second is the
additional power dissipated while delivering power to the external load. For low frequency (<1MHz) applications,
the LM7372 supply current specification will suffice to determine the quiescent power dissipation (see High
Frequency/Large Signal Swing Considerations for cases where the frequency range exceeds 1MHz and the
LM7372 supply current increases). The LM7372 quiescent supply current is given as 6.5 mA per amplifier, so
with a 24-V supply, the power dissipation is:
PQ = VS x 2Iq
-3
= 24 x 2 x (6.5 x 10 )
= 312mW
where
•
(VS = V+ - V−)
(1)
This is already a high level of internal power dissipation, and in a small surface mount package with a thermal
resistance of RθJA = 140°C/Watt -- a not unreasonable value for an 8-Pin SOIC package -- would result in a
junction temperature 140°C/W x 0.312W = 43.7°C above the ambient temperature. A similar calculation using the
worst case maximum supply current specification of 8.5 mA per amplifier at an 85°C ambient will yield a power
dissipation of 456 mW with a junction temperature of 149°C, perilously close to the maximum permitted junction
temperature of 150°C.
The second contributor to high junction temperature is the additional power dissipated internally when power is
being delivered to the external load. This cause of temperature rise can be more difficult to calculate, even when
the actual operating conditions are known.
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Application Details (continued)
For a Class B output stage, one transistor of the output pair will conduct the load current as the output voltage
swings positive, with the other transistor drawing no current, and hence dissipating no power. During the other
half of the signal swing, this situation is reversed, with the lower transistor sinking the load current and the upper
transistor cut off. The current in each transistor will be a half wave rectified version of the total load current.
Ideally neither transistor will dissipate power when there is no signal swing, but will dissipate increasing power as
the output current increases. However, as the signal voltage across the load increases with load current, the
voltage across the output transistor (which is the difference voltage between the supply voltage and the
instantaneous voltage across the load) will decrease and a point will be reached where the dissipation in the
transistor will begin to decrease again. If the signal is driven into a square wave, ideally the transistor dissipation
will fall to zero.
Therefore, for each amplifier, with an effective load each of RL and a sine wave source, integration over the half
cycle with a supply voltage VS and a load voltage VL yields the average power dissipation of:
PD = VSVL/πRL - VL2/2RL
where
•
•
VS is the supply voltage
VL is the peak signal swing across the load RL
(2)
For the package, the power dissipation will be doubled since there are two amplifiers in the package, each
contributing half the swing across the load.
The circuit in Single Supply Application, Figure 24, is using the LM7372 as the upstream driver in an ADSL
application with Discrete MultiTone modulation. With DMT the upstream signal is spread into 32 adjacent
channels each 4 kHz wide. For transmission over POTS, the regular telephone service, this upstream signal from
the CPE (Customer Premise Equipment) occupies a frequency band from around 20 kHz up to a maximum
frequency of 135 kHz. At first sight, these relatively low transmission frequencies certainly do not seem to require
the use of very high speed amplifiers with GBW products in the range of hundreds of megahertz. However, the
close spacing of multiple channels places stringent requirements on the linearity of the amplifier, since nonlinearities in the presence of multiple tones will cause harmonic products to be generated that can easily interfere
with the higher frequency down stream signals also present on the line. The need to deliver 3rd Harmonic
distortion terms lower than −75 dBc is the reason for the LM7372 quiescent current levels. Each amplifier is
running over 3mA in the output stage alone in order to minimize crossover distortion. The xDSL signal levels are
adjusted to provide a given power level on the line, and in the case of ADSL, this is an average power of 13
dBm. For a line with a characteristic impedance of 100 Ω this is only 20 mW (= 1 mW x 10(13/10)). Because the
transformer shown in Figure 24 is part of a transceiver circuit, two back-termination resistors are connected in
series with each amplifier output. Therefore the equivalent RL for each amplifier is also 100 Ω, and each amplifier
is required to deliver 20 mW to this load.
Since VL2/2RL = 20mW then VL = 2V(peak).
(3)
Using Equation 2 with this value for signal swing and a 24V supply, the internal power dissipation per amplifier is
132.8mW. Adding the quiescent power dissipation to the amplifier dissipation gives the total package internal
power dissipation as
PD(TOTAL) = 312mW + (2 x 132.8mW) = 578mW
(4)
This result is actually quite pessimistic because it assumes that the dissipation as a result of load current is
simply added to the dissipation as a result of quiescent current. This is not correct, since the AB bias current in
the output stage is diverted to load current as the signal swing amplitude increases from zero. In fact with load
currents in excess of 3.3 mA, all the bias current is flowing in the load, consequently reducing the quiescent
component of power dissipation. Also, it assumes a sine wave signal waveform when the actual waveform is
composed of many tones of different phases and amplitudes which may demonstrate lower average power
dissipation levels.
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Application Details (continued)
The average current for a load power of 20 mW is 14.1 mA (= √(20mW/100)). Neglecting the AB bias current,
this appears as a full-wave rectified current waveform in the supply current with a peak value of 19.9mA. The
peak to average ratio for a waveform of this shape is 1.57, so the total average load current is 12.7 mA (= 19.9
mA/1.57). Adding this to the quiescent current, and subtracting the power dissipated in the load (20 mV x 2 = 40
mW) gives the same package power dissipation level calculated above (= (12.7 + 13) mA x 24 V –40 mV = 576
mW). Nevertheless, when the supply current peak swing is measured, it is found to be significantly lower
because the AB bias current is contributing to the load current. The supply current has a peak swing of only 14
mA (compared to 19.9 mA) superimposed on the quiescent current, with a total average value of only 21 mA.
Therefore, the total package power dissipation in this application is:
PD(TOTAL) = (VS x Iavg) - Power in Load
= (24 x 21)mW - 40mW
= 464mW
(5)
This level of power dissipation would not take the junction temperature in the 8-Pin SO PowerPAD package over
the absolute maximum rating at elevated ambient temperatures (barely), but there is no margin to allow for
component tolerances or signal variances.
To develop 20 mW in a 100 Ω requires each amplifier to deliver a peak voltage of only 2V, or 4V(P-P). This level
of signal swing does not require a high supply voltage but the application uses a 24V supply. This is because the
modulation technique uses a large number of tones to transmit the data. While the average power level is held to
20 mW, at any time the phase and amplitude of individual tones will be such as to generate a combined signal
with a higher peak value than 2 V. For DMT this crest factor is taken to be around 5.33 so each amplifier has to
be able to handle a peak voltage swing of:
VLpeak = 1.4 x 5.33 = 7.5 V or 15 V(P-P)
(6)
If other factors, such as transformer loss or even higher peak to average ratios are allowed for, this means the
amplifiers must each swing between 16 to 18 V(P-P).
The required signal swing can be reduced by using a step-up transformer to drive the line. For example a 1:2
ratio will reduce the peak swing requirement by half, and this would allow the supply to be reduced by a
corresponding amount. This is not recommended for the LM7372 in this particular application for two reasons.
First, although the quiescent power contribution to the overall dissipation is reduced by about 150 mW, the
internal power dissipation to drive the load remains the same, since the load for each amplifier is now 25 Ω
instead of 100 Ω. Secondly, this is a transceiver application where downstream signals are simultaneously
appearing at the transformer secondary. The down stream signals appear differentially across the back
termination resistors and are now stepped down by the transformer turns ratio with a consequent loss in receiver
sensitivity compared to using a 1:1 transformer. Any trade-off to reduce the supply voltage by an increase in
turns ratio should bear these factors in mind, as well as the increased signal current levels required with lower
impedance loads.
At an elevated ambient temperature of 85°C and with an average power dissipation of 464mW, a package
thermal resistance between 60°C/W and 80°C/W will be needed to keep the maximum junction temperature in
the range 110°C to 120°C. The SO PowerPAD package would be the package of choice here with ample board
copper area to aid in heat dissipation (see Table 2).
For most standard surface mount packages (8-Pin SOIC, 14-Pin SOIC, 16-Pin SOIC, and so forth), the only
means of heat removal from the die is through the bond wires to external copper connecting to the leads. Usually
it will be difficult to reduce the thermal resistance of these packages below 100°C/W by these methods and
several manufacturers, including Texas Instruments, offer package modifications to enhance the thermal
characteristics.
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Application Details (continued)
L*
H*
16-PIN SURFACE
MOUNT
Figure 25. Copper Heatsink Patterns
The LM7372 is available in the 16-Pin SOIC package. Since only 8 pins are needed for the two operational
amplifiers, the remaining pins are used for heat sink purposes. Each of the end pins, 1,8,9 & 16 are internally
bonded to the lead frame and form an effective means of transferring heat to external copper. This external
copper can be either electrically isolated or be part of the topside ground plane in a single supply application.
Figure 25 shows a copper pattern which can be used to dissipate internal heat from the LM7372. Table 1 gives
some values of RθJA for different values of L and H with 1oz copper.
Table 1. 16-Pin SOIC Thermal Resistance with Area of Cu
L (in)
H (in)
RθJA (°C/W)
1
0.5
83
2
1
70
3
1.5
67
From Table 1 it is apparent that two areas of 1oz copper at each end of the package, each 2 in2 in area (for a
total of 2600mm2) will be sufficient to hold the maximum junction temperature under 120°C with an 85°C ambient
temperature.
An even better package for removing internally generated heat is a package with an exposed die attach paddle.
Improved removal of internal heat can be achieved by directly connecting bond wires to the lead frame inside the
package. Since this lead frame supports the die attach paddle, heat is transferred directly from the substrate to
the outside copper by these bond wires. The LM7372 is also available in the 8-Pin SO PowerPAD package. For
this package the entire lower surface of the paddle is not covered with plastic, which would otherwise act as a
thermal barrier to heat transfer. Heat is transferred directly from the die through the paddle rather than through
the small diameter bonding wires. Values of RθJA in °C/W for the SO PowerPAD package with various areas and
weights of copper are tabulated in Table 2.
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Table 2. Thermal Resistance of SO PowerPAD Package
COPPER
AREA
0.5 in2
(EACH SIDE)
1.0 in2
(EACH SIDE)
2.0 in2
(EACH SIDE)
0.5 oz
1.0 oz
2.0 oz
Top
Layer
Only
115
91
74
105
79
60
102
72
52
0.5 oz
1.0 oz
2.0 oz
Bottom
Layer
Only
102
92
85
88
75
66
81
65
54
0.5 oz
1.0 oz
2.0 oz
Top And Bottom
83
71
63
70
57
48
63
47
37
Table 2 clearly demonstrates the superior thermal qualities of the exposed pad package. For example, using the
topside copper only in the same way as shown for the SOIC package (Figure 25), the SO PowerPAD requires
half the area of 1 oz copper (2 in2, total or 1300mm2), for a comparable thermal resistance of 72°C/Watt. This
gives considerably more flexibility in the PCB layout aside from using less copper.
The shape of the heat sink shown in Figure 25 is necessary to allow external components to be connected to the
package pins. If thermal vias are used beneath the SO PowerPAD to the bottom side ground plane, then a
square pattern heat sink can be used and there is no restriction on component placement on the top side of the
board. Even better thermal characteristics are obtained with bottom layer heat sinking. A 2 inch square of 0.5oz
copper gives the same thermal resistance (81°C/W) as a competitive thermally enhanced 8-Pin SOIC package
which needs two layers of 2 oz copper, each 4 in2 (for a total of 5000 mm2). With heavier copper, thermal
resistances as low as 54°C/W are possible with bottom side heat sinking only, substantially improving the long
term reliability since the maximum junction temperature is held to less than 110°C, even with an ambient
temperature of 85°C. If both top and bottom copper planes are used, the thermal resistance can be brought to
under 40°C/W.
8.3.1 High Frequency/Large Signal Swing Considerations
The LM7372 employs a unique input stage in order to support large slew rate and high output current capability
with large output swings, with a relatively low quiescent current. This input architecture boosts the device supply
current when the application demands it. The result is a supply current which increases at high enough
frequencies when the output swing is large enough with added power dissipation as a consequence.
Figure 26 shows the amount of increase in supply current as a function of frequency for various sinusoidal output
swing amplitudes:
1000
10V supply (1 amplifier)
10V supply (2 amplifiers)
TJ = 140°C
100
30V supply
(1 amplifier)
10 30V supply
6V
PP
PP
(2 amplifiers)
PP
PP
2V
3V
PP
PP
1V
1
15
V
20
V
PP
24
V
PP
10
V
IS INCREASE (mA)
8-Pin SO PowerPAD
qJA = 47°C/W
TA = 85°C
1
10
100
FREQUENCY (MHz)
Figure 26. Power Supply Current Increase
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Figure 26 shows that there could be 1 mA or more excess supply current per amplifier with close to full output
swing (24 VPP) when frequency is just above 1MHz (or at higher frequencies when the output swing is less). This
boost in supply current enables the output to “keep up” with high frequency/large signal output swing, but in turn,
increases the total package power dissipation and therefore raises the device junction temperature. As a
consequence, it is necessary to pay special attention to the package heatsink design for these demanding
applications, especially for ones that run at higher supply voltages. For that reason, Figure 26 has the safe
operating limits for the 8-Pin SO PowerPAD package -- for example, “30V supply (2 amplifiers)” horizontal line -superimposed on top of it (with TJ limit of 140°C when operated at 85°C ambient), so that the designer can
readily decide whether or not there is need for additional heat sinking.
For example, if the LM7372 is operating similarly to the Figure 24 schematic with a single power supply of 10 V,
it is safe to have up to 10 VPP output swing at up to 40 MHz with no additional heat sinking. This is determined
by inspecting Figure 24 where the "10 V supply (2 amplifiers)" safe operating limit intercepts the 10 VPP swing
graph at around 40 MHz Use the "10 V supply (1 amplifier) safe operating limit in cases where the second
amplifier in the LM7372 package does not experience high frequency/high output swing conditions.
At any given “IS increase” value (y axis), the product of frequency and output swing remains essentially constant
for all output swing plots. This holds true for the lower frequency range before the plots experience a slope
increase. Therefore, if the application example just discussed operates up to 60MHz instead, it is possible to
calculate the junction-temperature-limited maximum output swing of 6.7 VPP(= 40 MHz x 10VPP/60 MHz) instead.
Please note that Figure 26 precludes any additional amplifier power dissipation related to load (this topic is
discussed below in detail). This load current, if large enough, will reduce the operating frequency/output swing
further. It is important to note that the LM7372 can be destroyed if it is allowed to dissipate enough power that
compromises its maximum junction temperature limit of 150°C.
With the op amp tied to a load, the device power dissipation consists of the quiescent power due to the supply
current flow into the device, in addition to power dissipation due to the load current. The load portion of the
power itself could include an average value (due to a DC load current) and an AC component. DC load current
would flow if there is an output voltage offset, or the output AC average current is non-zero, or if the op amp
operates in a single supply application where the output is maintained somewhere in the range of linear
operation. Therefore:
PD(TOTAL) = PQ + PDC + PAC
PQ = |IS • VS| (Op Amp Quiescent Power Dissipation)
PDC = |IO • (VR - VO)| (DC Load Power)
(7)
(8)
(9)
For PAC, (AC Load Power) see Table 3
where:
• IS = Supply Current
• VS = Total Supply Voltage (V+ - V−)
• IO = Average Load Current
• VO = Average Output Voltage
• VR = Reference Voltage (V+ for sourcing and V− for sinking current)
Table 3 shows the maximum AC component of the load power dissipated by the op amp for standard Sinusoidal,
Triangular, and Square Waveforms:
Table 3. Normalized Maximum AC Power Dissipated in the Output Stage for Standard Waveforms
PAC (W.Ω/V2)
SINUSOIDAL
TRIANGULAR
SQUARE
50.7 x 10−3
46.9 x 10−3
62.5 x 10−3
The table entries are normalized to VS2/RL. These entries are computed at the output swing point where the
amplifier dissipation is the highest for each waveform type. To figure out the AC load current component of
power dissipation, simply multiply the table entry corresponding to the output waveform by the factor VS2/RL. For
example, with ±5V supplies, a 100-Ω load and triangular output waveform, power dissipation in the output stage
is calculated as: PAC = 46.9 x 10−3 x 102/100 = 46.9mW which contributes another 2.2°C (= 46.9mW x 47°C/W)
rise to the LM7372 junction temperature in the 8-Pin SO PowerPAD package.
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9 Power Supply Recommendations
The LM7372 is fabricated on a high voltage, high speed process. Using high supply voltages ensures adequate
headroom to give low distortion with large signal swings. In Figure 24, a single 24 V supply is used. To maximize
the output dynamic range the non-inverting inputs are biased to half supply voltage by the resistive divider R1,
R2. The input signals are AC coupled and the coupling capacitors (C1, C2) can be scaled with the bias resistors
(R3, R4) to form a high pass filter if unwanted coupling from the POTS signal occurs.
Supply decoupling is important at both low and high frequencies. The 10µF Tantalum and 0.1µF Ceramic
capacitors should be connected close to the supply Pin 14. Note that the V− pin (pin 6), and the PCB area
associated with the heatsink (Pins 1,8,9 & 16) are at the same potential. Any layout should avoid running input
signal leads close to this ground plane, or unwanted coupling of high frequency supply currents may generate
distortion products.
Although this application shows a single supply, conversion to a split supply is straightforward. The half supply
resistive divider network is eliminated and the bias resistors at the non-inverting inputs are returned to ground.
For example, see Figure 23 where the pin numbers in Figure 23 are given for SO PowerPAD package, whereas
those
in
Single Supply Application (16-Pin SOIC) are for the SOIC package. With a split supply, note that the ground
plane and the heatsink copper must be separate and are at different potentials, with the heatsink (pin 4 of the SO
PowerPAD, pins 6,1,8,9 and 16 of the SOIC) now at a negative potential (V−).
In either configuration, the area under the input pins should be kept clear of copper (whether ground plane
copper or heatsink copper) to avoid parasitic coupling to the inputs.
The LM7372 is stable with non inverting closed loop gains as low as +2. Typical of any voltage feedback
operational amplifier, as the closed loop gain of the LM7372 is increased, there is a corresponding reduction in
the closed loop signal bandwidth. For low distortion performance it is recommended to keep the closed loop
bandwidth at least 10X the highest signal frequency. This is because there is less loop gain (the difference
between the open loop gain and the closed loop gain) available at higher frequencies to reduce harmonic
distortion terms.
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10 Layout
10.1 Layout Guidelines
Generally, a good high-frequency layout will keep power supply and ground traces away from the inverting input
and output pins. Parasitic capacitance on these nodes to ground will cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15, "Frequent Faux Pas in Applying Wideband Current
Feedback Amplifiers", SNOA367, for more information). Texas Instruments suggests the following evaluation
boards as a guide for high frequency layout and as an aid in device testing and characterization:
Table 4. Printed Circuit Board Layout and Evaluation Boards
DEVICE
PACKAGE
LM7372MA
16-Pin SOIC
EVALUATION BOARD PN
None
LM7372MR
8-Pin SO PowerPAD
LMH730121
The DAP (die attach paddle) on the 8-Pin SO PowerPAD should be tied to V−. It should not be tied to ground.
See the respective Evaluation Board documentation.
11 Device and Documentation Support
11.1 Trademarks
VIP is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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4-Sep-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM7372IMA
NRND
SOIC
D
16
48
TBD
Call TI
Call TI
-40 to 85
LM7372IMA
LM7372IMA/NOPB
ACTIVE
SOIC
D
16
48
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM7372IMA
LM7372IMAX/NOPB
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM7372IMA
LM7372MR
NRND
SO PowerPAD
DDA
8
95
TBD
Call TI
Call TI
-40 to 85
LM73
72MR
ACTIVE SO PowerPAD
DDA
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 85
LM73
72MR
SO PowerPAD
DDA
8
2500
TBD
Call TI
Call TI
-40 to 85
LM73
72MR
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 85
LM73
72MR
LM7372MR/NOPB
LM7372MRX
LM7372MRX/NOPB
NRND
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
4-Sep-2014
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Sep-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM7372IMAX/NOPB
SOIC
D
16
2500
330.0
16.4
6.5
10.3
2.3
8.0
16.0
Q1
LM7372MRX
SO
Power
PAD
DDA
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM7372MRX/NOPB
SO
Power
PAD
DDA
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Sep-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM7372IMAX/NOPB
SOIC
D
16
2500
367.0
367.0
35.0
LM7372MRX
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
LM7372MRX/NOPB
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
DDA0008B
MRA08B (Rev B)
www.ti.com
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