SMC MBRB735 Schottky rectifier Datasheet

MBR735/MBRB735
MBR745/MBRB745
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0720, Rev. -
Green Products
MBR735/MBR745/MBRB735/MBRB745
SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Features:
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
MBR…
MBRB…
D2PAK
TO-220AC
Mechanical Dimensions: In Inches / mm
Symbol
A
A1
A2
b
b1
c
D
D1
E
E1
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
Dimensions in
millimeters
Min.
Typical
Max.
4.55
1.17
2.59
0.71
0.36
14.64
8.55
10.01
9.98
6.04
13.00
3.74
2.54
4.70
1.27
2.69
0.81
1.27
0.38
14.94
8.07
10.16
10.18
5.08
6.24
13.86
3.80
3.84
2.74
5°
4°
4°
4.85
1.37
2.89
0.96
0.61
15.24
8.85
10.31
10.38
6.44
14.08
4.04
2.94
TO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR735/MBRB735
MBR745/MBRB745
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0720, Rev. -
Green Products
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
4.85
0.25
2.89
0.96
0.61
1.37
8.85
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
15.6
2.70
1.40
2.20
0.25BSC
5°
4°
4°
8°
D2PAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR735/MBRB735
MBR745/MBRB745
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0720, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
B
7
35
SSG
YY
WW
L
MBR735
= Device Type
= Package type
= Forward Current (7A)
= Reverse Voltage (35V)
= SSG
= Year
= Week
= Lot Number
MBRB735
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBR735
MBRB735
Package
Shipping
TO-220AC(Pb-Free)
50pcs/ tube
D²PAK (Pb-Free)
800pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Peak Repetitive Reverse
Surge Current
Symbol
VRWM
Condition
-
Max.
35(MBR.735)
45(MBR.745)
7.5
Units
V
IF(AV)
@TC=131℃(Rated VR)
IFSM
8.3 ms, half Sine pulse
150
A
IRRM
2.0μsec 1.0KHz
1.0
A
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR735/MBRB735
MBR745/MBRB745
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0720, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current (per
leg) *
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
CT
LS
dv/dt
Condition
@ 15A, Pulse, TJ = 25 °C
@ 7.5A, Pulse, TJ = 125 °C
@VR = rated VR Pulse
TJ = 25 °C
@VR = rated VR , Pulse
TJ = 125 °C
@VR = 5V, TC = 25 °C fSIG =
1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.84
0.57
0.1
Units
V
V
mA
15.0
mA
400
pF
8.0
nH
10,00
V/μs
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Typical Thermal Resistance
Case to Heat Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
RθCS
wt
Condition
DC operation
Mounting surface, smooth and
greased
(only for TO-220)
TO-220AC/D²PAK
Specification
-55 to +150
-65 to +175
3.0
Units
°C
°C
0.50
°C/W
1.6/1.85
g
°C/W
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR735/MBRB735
MBR745/MBRB745
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0720, Rev. -
Green Products
Typical Reverse Characteristics
Instantaneous Reverse Current - IR (mA)
Typical Forward Characteristics
101
125 癈
100
150 癈
101
125 癈
100 癈
100
75 癈
10-1
50 癈
10-2
25 癈
10-3
0
25 癈
Junction Capacitance - CT (pF)
Instantaneous Forward Current - I F (A)
150 癈
102
10-1
0.0
0.2
0.4
0.6
Forward Voltage Drop - VF (V)
0.8
10
20
30
40
50
Reverse Voltage - VR (V)
60
Typical Junction Capacitance
800
700
600
500
400
300
200
0
10
20
30
40
50
Reverse Voltage - VR (V)
60
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0720, Rev. -
MBR735/MBRB735
MBR745/MBRB745
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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