TI1 CD74HC365QDRQ1 High-speed cmos logic hex buffer/line driver, three-state non-inverting and inverting Datasheet

CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
www.ti.com
SCHS382 – JANUARY 2010
HIGH-SPEED CMOS LOGIC HEX BUFFER/LINE DRIVER, THREE-STATE NON-INVERTING
AND INVERTING
Check for Samples: CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
FEATURES
•
1
•
•
•
•
•
•
•
•
•
Qualified for Automotive Applications
Buffered Inputs
High Current Bus Driver Outputs
Typical Propagation Delay tPLH, tPHL = 8ns at
VCC = 5V, CL = 15pF, TA = 25°C
Fanout (Over Temperature Range)
– Standard Outputs . . . . . . . . . . . . . . . 10
LSTTL Loads
– Bus Driver Outputs . . . . . . . . . . . . . 15
LSTTL Loads
Wide Operating Temperature Range . . . –40°C
to 125°C
Balanced Propagation Delay and Transition
Times
Significant Power Reduction Compared to
LSTTL Logic ICs
HC Types
– 2V to 6V Operation
– High Noise Immunity: NIL = 30%, NIH = 30%
of VCC at VCC = 5V
HCT Types
– 4.5V to 5.5V Operation
– Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
– CMOS Input Compatibility, Il ≤ 1mA at VOL,
VOH
D PACKAGE
(TOP VIEW)
DESCRIPTION
The CD74HC365-Q1, CD74HC366-Q1, and CD74HCT365-Q1 silicon gate CMOS three state buffers are general
purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high
speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of
CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of
driving up to 15 low power Schottky inputs.
The CD74HC365-Q1 and CD74HCT365-Q1 are non-inverting buffers, whereas the CD74HC366-Q1 is an
inverting buffer. These devices have two three-state control inputs (OE1 and OE2) which are NORed together to
control all six gates.
The ’HCT365-Q1 logic families are speed, function and pin compatible with the standard LS logic family.
ORDERING INFORMATION (1)
PACKAGE (2)
TA
–40°C to 125°C
(1)
(2)
SOIC – D
Reel of 2500
ORDERABLE PART NUMBER
TOP-SIDE MARKING
CD74HC366QDRQ1
HC366Q
CD74HC365QDRQ1
Product Preview
CD74HCT365QDRQ1
Product Preview
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
SCHS382 – JANUARY 2010
www.ti.com
FUNCTIONAL DIAGRAMS
CD74HC365-Q1, CD74HCT365-Q1
CD74HC366-Q1
TRUTH TABLE (1)
OUTPUTS
(Y)
INPUTS
(1)
2
OE1
OE2
A
HC/HCT365
HC366
L
L
L
L
H
L
L
H
H
L
X
H
X
Z
Z
H
X
X
Z
Ζ
H = High Voltage Level
L = Low Voltage Level
X = Don’t Care
Z = High Impedance (OFF) State
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Product Folder Link(s): CD74HC365-Q1 CD74HC366-Q1 CD74HCT365-Q1
CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
www.ti.com
SCHS382 – JANUARY 2010
LOGIC DIAGRAM
NOTE: Inverter not included in CD74HC365-Q1, CD74HCT365-Q1
Figure 1. LOGIC DIAGRAM FOR THE HC/HCT365 AND HC366
(outputs for HC/HCT365 are complements of those shown, i.e., 1Y, 2Y, etc.)
Copyright © 2010, Texas Instruments Incorporated
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3
CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
SCHS382 – JANUARY 2010
www.ti.com
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
CONDITIONS
VALUE
VCC
DC supply voltage
-0.5V to +7V
IIK
DC input diode current,
VI < -0.5V or VI > VCC + 0.5V
±20mA
IOK
DC output diode current
VO < -0.5V or VO > VCC + 0.5V
±20mA
DC drain current per output
IO
ICC
DC VCC or ground current
ESD
Electrostatic discharge
±35mA
VO > -0.5V or VO < VCC + 0.5V
DC output source or sink current per output pin
±25mA
±50mA
Human-Body Model
1.5kV
Machine Model
200V
Field_Induced_Charged Device Model
250V
Latch up
(1)
Class I
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
qJA
Thermal resistance (typical) (1)
JT
Maximum junction temperature
Tstg
Maximum storage temperature range
Maximum lead temperature (soldering 10s)
(1)
MIN
D (SOIC) package
–65
(SOIC - lead tips only)
MAX
UNIT
73
°C/W
150
°C
150
°C
300
°C
The package thermal impedance is calculated in accordance with JESD 51-7.
RECOMMENDED OPERATING CONDITIONS
HC Types
MIN
MAX
2
6
4.5
5.5
UNIT
VCC
Supply voltage
VI
DC Input voltage
0
VCC
V
VO
DC Output voltage
0
VCC
V
TA
Operating free-air temperature
125
°C
HCT Types
–40
2V
Input Rise and Fall Time
4
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V
1000
4.5 V
500
6V
400
ns
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CD74HC365-Q1 CD74HC366-Q1 CD74HCT365-Q1
CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
www.ti.com
SCHS382 – JANUARY 2010
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
TEST CONDITIONS
PARAMETER
VI (V)
IO (mA)
-
-
25°C
VCC (V)
-40°C TO 125°C
MIN
TYP
MAX
MIN
MAX
UNITS
HC Types
VIH
High-level input voltage
VIL
Low-level input voltage
-
CMOS
CMOS
Low-level output
voltage loads
VOL
-
1.5
-
-
-
3.15
-
6
4.2
-
-
4.2
-
2
-
-
0.5
-
0.5
4.5
-
-
1.35
-
1.35
6
-
-
1.8
-
1.8
1.9
-
-
1.9
-
4.4
-
-
4.4
-
6
5.9
-
-
5.9
-
-6
4.5
3.98
-
-
3.7
-
-7.8
6
5.48
-
-
5.2
-
2
-
-
0.1
-
0.1
0.02
4.5
-
-
0.1
-
0.1
6
-
-
0.1
-
0.1
6
4.5
-
-
0.26
-
0.4
7.8
6
-
-
0.26
-
0.4
VIH or VIL
TTL
-
2
VIH or VIL
TTL
1.5
3.15
4.5
-0.02
High-level output
voltage loads
VOH
-
2
4.5
V
V
V
V
II
Input leakage current
VCC or GND
-
6
-
-
±0.1
-
±1
mA
ICC
Quiescent device current
VCC or GND
0
6
-
-
8
-
160
mA
VIH or VIL
VO = VCC
or GND
6
-
-
±0.5
-
±10
mA
IOZ
Three-state leakage current
HCT Types
VIH
High-level input voltage
-
-
4.5 to 5.5
2
-
-
2
-
V
VIL
Low-level input voltage
-
-
4.5 to 5.5
-
-
0.8
-
0.8
V
VOH
High-level output
voltage loads
CMOS
-0.02
4.5
4.4
-
-
4.4
-
-4
4.5
3.98
-
-
3.7
-
VOL
Low-level output
voltage loads
CMOS
0.02
4.5
-
-
0.1
-
0.1
4
4.5
-
-
0.26
-
0.4
II
Input leakage current
VCC or GND
-
5.5
-
-
±0.1
-
±1
mA
ICC
Quiescent device current
VCC or GND
0
5.5
-
-
8
-
160
mA
ΔICC
Additional quiescent device
current per input pin: 1 unit load (1)
VCC - 2.1
-
4.5 to 5.5
-
100
360
-
490
mA
IOZ
Three-state leakage current
VIH or VIL
VO = VCC
or GND
5.5
-
-
±0.5
-
±10
mA
(1)
VIH or VIL
TTL
VIH or VIL
TTL
V
V
For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading
INPUT
Copyright © 2010, Texas Instruments Incorporated
UNIT LOADS
OE1
0.6
All Others
0.55
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CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
SCHS382 – JANUARY 2010
www.ti.com
SWITCHING CHARACTERISTICS
Input tr, tf = 6ns
PARAMETER
25°C
TEST
CONDITIONS
VCC (V)
CL = 50pF
-40°C TO
125°C
UNITS
TYP
MAX
MAX
2
-
110
165
4.5
-
22
33
6
-
19
28
5
9
-
-
2
-
150
225
4.5
-
31
45
6
-
26
38
5
12
-
-
2
-
60
90
4.5
-
12
18
6
-
10
15
-
-
10
10
pF
HC Types
HC365
tPLH,
tPHL
CL = 15pF
Propagation delay, data to
outputs
HC366
CL = 50pF
CL = 15pF
tTLH,
tTHL
Output transition time
CL = 50pF
ns
ns
CI
Input capacitance
-
CO
Three-state output capacitance
-
-
-
20
20
pF
CPD
Power dissipation capacitance (1) (2)
-
5
40
-
-
pF
38
HCT Types
CL = 50pF
4.5
-
25
CL = 15pF
5
9
-
-
CL = 50pF
4.5
-
27
41
CL = 15pF
5
11
-
-
Propagation delay, output enable and disable to
outputs
CL = 50pF
4.5
CL = 15pF
5
tTLH, tTHL
Output transition time
CL = 50pF
CI
Input capacitance
CO
Three-state output capacitance
CPD
Power dissipation capacitance (1) (2)
HCT365
tPLH, tPHL
Propagation delay, data to
outputs
HCT366
tPLH, tPHL
(1)
(2)
6
ns
-
35
53
14
-
-
4.5
-
12
18
ns
-
-
-
10
10
pF
-
-
-
20
20
pF
-
5
42
-
-
pF
ns
CPD is used to determine the dynamic power consumption, per inverter.
PD = VCC2 × fi (CPD + CL), where fi = input frequency, CL = output load capacitance, VCC = supply voltage
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Product Folder Link(s): CD74HC365-Q1 CD74HC366-Q1 CD74HCT365-Q1
CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1
www.ti.com
SCHS382 – JANUARY 2010
TEST CIRCUIT AND WAVEFORMS
Figure 2. HC and HCU Transition Times and
Propagation Delay Times, Combination Logic
Figure 3. HCT Transition Times and Propagation
Delay Times, Combination Logic
Figure 4. HC Three-State Propagation Delay
Waveform
Figure 5. HCT Three-State Propagation Delay
Waveform
W
W
Figure 6. HC and HCT Three-State Propagation Delay Test Circuit
Copyright © 2010, Texas Instruments Incorporated
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Product Folder Link(s): CD74HC365-Q1 CD74HC366-Q1 CD74HCT365-Q1
7
PACKAGE OPTION ADDENDUM
www.ti.com
7-Jan-2011
PACKAGING INFORMATION
Orderable Device
CD74HC366QDRQ1
Status
(1)
ACTIVE
Package Type Package
Drawing
SOIC
D
Pins
Package Qty
16
2500
Eco Plan
(2)
Green (RoHS
& no Sb/Br)
Lead/
Ball Finish
MSL Peak Temp
CU NIPDAU Level-1-260C-UNLIM
(3)
Samples
(Requires Login)
Purchase Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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OTHER QUALIFIED VERSIONS OF CD74HC366-Q1 :
• Catalog: CD74HC366
• Military: CD54HC366
NOTE: Qualified Version Definitions:
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
7-Jan-2011
• Catalog - TI's standard catalog product
• Military - QML certified for Military and Defense Applications
Addendum-Page 2
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