DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC817 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 12 1999 Jun 01 Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES PINNING • High current (max. 500 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. handbook, halfpage 3 3 MARKING TYPE NUMBER 1 MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC817 6D∗ BC817-25 6B∗ BC817-16 6A∗ BC817-40 6C∗ 1 2 2 Top view MAM255 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base; IC = 10 mA − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Jun 01 2 Philips Semiconductors Product specification NPN general purpose transistor BC817 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 20 V − − 100 nA ICBO collector cut-off current IE = 0; VCB = 20 V; Tj = 150 °C − − 5 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 100 mA; VCE = 1 V; note 1; see Figs 2, 3 and 4 100 − 600 BC817-16 100 − 250 BC817-25 160 − 400 BC817-40 250 − 600 BC817 hFE DC current gain 40 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 700 mV VBE base-emitter voltage IC = 500 mA; VCE = 1 V; note 2 − − 1.2 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz; − 5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz; 100 − − MHz IC = 500 mA; VCE = 1 V; note 1 Notes 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. VBE decreases by approx. 2 mV/K with increasing temperature. 1999 Jun 01 3 Philips Semiconductors Product specification NPN general purpose transistor BC817 MBH721 20 handbook, full pagewidth hFE 160 VCE = 1 V 120 80 40 0 10−1 1 10 102 IC (mA) 103 BC817-16. Fig.2 DC current gain; typical values. MBH720 500 handbook, full pagewidth hFE 400 VCE = 1 V 300 200 100 0 10−1 1 10 BC817-25. Fig.3 DC current gain; typical values. 1999 Jun 01 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistor BC817 MBH722 500 handbook, full pagewidth hFE 400 VCE = 1 V 300 200 100 0 10−1 1 10 BC817-40. Fig.4 DC current gain; typical values. 1999 Jun 01 5 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistor BC817 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Jun 01 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification NPN general purpose transistor BC817 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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