Diode Semiconductor Korea B320N-B360N REVERSE VOLTAGE: 20 --- 60 V CURRENT: 3.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 NSMC ◇ For surface mounted applications ◇ Low profile package 7.0±0.3 2.0±0.1 4.0±0.3 ◇ Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability ◇ High current capability,low forward voltage drop 8.1±0.3 2. ±0.2 3 ◇ Low power loss,high effciency ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection 0.25 ±0.06 0.203MAX 1.5±0.3 o ◇ High temperature soldering guaranteed:250 C/10 1 11 seconds at terminals MECHANICAL DATA ◇ Case:JEDEC NSMC,molded plastic over 1111passivated chip Dimensions in millimeters ◇ Terminals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 ◇ Polarity: Color band denotes cathode end MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified B320N B330N B340N B350N B360N B2N B3N B4N B5N B6N UNITS Dev ice marking code Maximum recurrent peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRWS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forw ord rectified current at c TL(SEE FIG.1) (NOTE 2) I(AV) 3.0 A Peak forw ard surge current 8.3ms single halfc sine-w ave superimposed on rated load(JEDEC c Method) IFSM 100.0 A Maximum instantaneous forw ard voltage at v 3.0A(NOTE.1) Maximum DC reverse current @TA=25oC VF IR Operating junction and storage temperature range Storage temperature range 0.70 0.5 V mA 20 at rated DC blockjing voltage(NOTE1) @TA=100oC Typical thermal resitance (NOTE2) 0.50 RθJA 50.0 RθJL 10.0 TSTG TJ o C/W -55--- +150 o -55--- +125 o C C NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle 2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm 2)copper pad areas www.diode.kr Diode Semiconductor Korea B320N - - B360N FIG.2-- PEAK FORWARD SURGE CURRENT 100 4.0 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD RECTIFIED CURRENT,AMPERES FIG.1 -- FORWARD DERATING CURVE Resistive or inductive Load B320N-B360N 3.0 P.C.B.MOUNTED ON 0.55"X0.55"(14.0X14.0mm) COPPERPAD AREAS 2.0 1.0 0 50 60 70 80 90 100 110 120 130 140 8.3ms Single Half Sine-Wave (JEDEC Method) 80 60 40 20 150 160 0 1 AMBIENT TEMPERATURE ℃ TJ=125OC 10.0 TJ=150OC Puise Width=300 S 1%DUTY CYCLE O TJ=25 C 0.01 0 B320N-B340 N B350N-B360N 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 1000 100 B320N-B340N B350N-B360N REVERSE VOLTAGE,VOLTS 0 TJ=75 C 0.1 B320N-B340N B350N-B360N 0.01 0.001 0 TJ=25 0C 20 40 60 80 100 100 O TJ=25 C f=1.0MHz Vsig=50mVp-p 10 1 FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE OC/W JUNCTION CAPACLTANCE pF FIG.5-TYPICAL JUNCTION CAPACITANCE 1.0 0 T J=125 C PERCENT OF RATED PEAK REVERSE VOLTAGE,％ INSTANTANEOUS FORWARD VOLTAGE,VOLTS 10 0.1 20 10 INSTANTANEOUS REVERSE CURRENT,MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 30.0 0.1 100 NUMBER OF CYCLES AT 60HZ FIG.3 -- TYPICAL FORWARD CHARACTERISTICS 1 10 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION,SEC www.diode.kr