LRC L2N60 600v n-channel mosfet low gane charge Datasheet

LESHAN RADIO COMPANY, LTD.
L2N60
600V N-Channel MOSFET
2
„ DESCRIPTION
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„ FEATURES
‡
‡
‡
‡
‡
$95 DS(ON) = 5.0 Ω @VGS = 10V
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„ ORDERING INFORMATION
Order Number
Package
Pin Assignment
1
2
3
Packing
L2N60P
L2N60F
TO-220
TO-220F
G
G
D
D
S
S
Tube
Tube
L2N60I
TO-251
G
D
S
Tube
L2N60D
TO-252
G
D
S
Tube
Rev .O 1/9
LESHAN RADIO COMPANY, LTD.
Absolute Maximum Ratings
6\PERO
9'66
,'
,'0
L2N60
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1RWH
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$
PD
TC =25к
Derate above 25°C
$
9
P-
($5
1RWH
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WR
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Total Power Dissipation
L2N60P
44
0.35
L2N60F
23
0.18
L2N60I
34
0.27
8QLWV
9
$
mJ
9QV
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L2N60D
34
0.27
UNIT
W
W/ к
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Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
L2N60P
2.26
62.5
L2N60F
5.56
120
L2N60I/D
3.7
112
Units
°C /W
°C /W
Rev .O 2/9
7
LESHAN RADIO COMPANY, LTD.
L2N60
Electrical Characteristics
Symbol
7& ƒ&XQOHVVRWKHUZLVHQRWHG
Parameter
Test Conditions
Min
Typ
Max
Units
9
9ƒ&
Off Characteristics
%9'66
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9*6 9,' μ$
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9'6 99*6 9
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9
Ω
,'66
On Characteristics
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Dynamic Characteristics
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Switching Characteristics
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4JV
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9'' 9,' $
5* Ω
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Drain-Source Diode Characteristics and Maximum Ratings
,6
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$
,60
$
96'
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9*6 9,6 $
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9
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Notes:
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/ P+, $6 $9'' 95* Ω, 6WDUWLQJ7- ƒ&
,6'≤$GLGW ≤$μV9''≤%9'666WDUWLQJ7- ƒ&
3XOVH7HVW3XOVHZLGWK≤μV'XW\F\FOH≤
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Rev .O 3/9
LESHAN RADIO COMPANY, LTD.
„ TEST CIRCUITS AND WAVEFORMS
L2N60
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
I FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
Rev .O 4/9
LESHAN RADIO COMPANY, LTD.
„ TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
L2N60
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
t D(ON )
tD (OFF)
tF
tR
Pulse Width ” 1Ӵs
Duty Factor ”0.1%
Fig. 2A Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50k¡
12V
0.2ӴF
QG
10V
0.3ӴF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
10V
VDD
D.U.T.
tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit ʳ ʳ ʳ Fig. 4B Unclamped Inductive Switching Waveforms
Rev .O 5/9
LESHAN RADIO COMPANY, LTD.
L2N60
„ TYPICAL CHARACTERISTICS
On-Region Characteristics
Transfer Characteristics
V GS
15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :
5.5V
VDS=50V
250Ӵs Pulse Test
Drain Current, ID (A)
100
10
-1
10
-2
Drain Current, ID (A)
Top:
250Ӵs Pulse Test
TC=25ć
10
-1
10
10
25ć
-20ć
10-1
2
1
0
85ć
0
10
4
Drain-Source Voltage, VDS (V)
VGS=10V
VGS=20V
8
6
4
2
1
3
2
4
5
10
0
125к
25к
10-1
0
0
6
0.2
Drain Current, ID (A)
Ciss
Ciss=CGS+CGD
(CDS=shorted)
Coss=CDS+CGD
Crss=CGD
300
Coss
200
Crss
100
VGS=0V
f = 1MHz
0
-1
10
0
10
0.8
1.0
1.2
1.4
1.6
12
VDS=120V
10
(V)
VDS=300V
VDS=480V
8
6
4
2
ID=2.4A
0
1
10
Drain-Source Voltage, V
0.6
Gate Charge vs. Gate Charge Voltage
Gate-Source Voltage, VGS (V)
Capacitance (pF)
400
0.4
Source-Drain Voltage, VSD (V)
Capacitance vs. Drain-Source Voltage
500
10
VGS=0V
250Ӵs Pulse Test
TJ=25к
10
8
Body Diode Forward Voltage Variationvs.
Source Current and Temperature
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ө)
On-Resistance Variation vs. Drain Current and
Gate Voltage
12
6
Gate-Source Voltage, VGS (V)
0
2
4
6
8
1
0
Total Gate Charge, Q (nC)
Rev .O 6/9
LESHAN RADIO COMPANY, LTD.
L2N60
„ TYPICAL CHARACTERISTICS(Cont.)
1.2
On -Resistance vs. Temperature
VGS=10V
ID=250ӴA
Drain-Source On-Resistance,
RDS(ON) (Normalized)
Drain-Source Breakdown Voltage,
VDSS (Normalized)
Breakdown Voltage vs. Temperature
1.1
1.0
0.9
0.8
-100 -50
0
100
50
150
3.0 V =10V
GS
ID=4.05A
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50
200
Junction Temperature, TJ (ć)
1ms
10m
Ds
C
TC=25ć
TJ=125ć
Single Pulse
Drain Current, ID (A)
Drain Current, ID (A)
100Ӵs 10Ӵs
100
200
150
2.0
101
10-2
100
Max. Drain Current vs. Case Temperature
Operation in This Area
is Limited by RDS(on)
10-1
50
Junction Temperature, T J (ć)
Max. Safe Operating Area
100
0
1.5
1.0
0.5
0.0
101
102
103
25
50
75
100
125
150
Case Temperature, TC (ć)
Drain-Source Voltage, VDS (V)
Thermal Response, ӰJC (t)
Thermal Response
100
D=0.5
ӰJC (t) = 2.78ć/W Max.
Duty Factor, D=t1/t2
TJM -TC=PDM×ӰJC (t)
0.2
0.1
0.05
-1
10
0.02
PDM
0.01
t1
Single pulse
t2
10-5
10-4
10-3
10-2
10-1
0
10
1
10
Square Wave Pulse Duration, t1 (s)
Rev .O 7/9
LESHAN RADIO COMPANY, LTD.
TO-220-3L
TO-220F-3L
Unit:mm
Unit:mm
Rev .O 8/9
7
LESHAN RADIO COMPANY, LTD.
ऩԡ: mm
TO-251-3L
ऩԡ: mm
7.1̚7.9
14.2̚15.3
5.4±0.3
TO-252-2L
Rev .O 9/9
7
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