ON CM1250-04QG Low capacitance transient voltage suppressor Datasheet

CM1250-04QG
Low Capacitance Transient
Voltage Suppressors / ESD
Protectors
Features
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• Low I/O Capacitance at 5 pF at 0 V
• In−System ESD Protection to ±8 kV Contact Discharge,
•
•
•
per the IEC 61000−4−2 International Standard
Compact SMT Package Saves Board Space and Facilitates Layout
in Space−Critical Applications
Each I/O Pin Can Withstand over 1000 ESD Strikes*
These Devices are Pb−Free and are RoHS Compliant
UDFN−6
QG SUFFIX
CASE 517BM
BLOCK DIAGRAM
CM1250−04QG
VN
5
6
1
4
2
VN
3
MARKING DIAGRAM
LS
LS = CM1250−04QG
ORDERING INFORMATION
Device
Package
Shipping†
CM1250−04QG
UDFN6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production
test to verify that all of the tested parameters are within spec after the 1000 strikes.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 4
1
Publication Order Number:
CM1250−04QG/D
CM1250−04QG
PACKAGE / PINOUT DIAGRAM
Top View
CH1 (1)
CH4 (6)
VN (2)
VN (5)
CH2 (3)
CH3 (4)
6−Lead uDFN (0.4mm)
Table 1. PIN DESCRIPTIONS
Pins
Name
(Refer to package / pinout diagram)
CHx
(Refer to package / pinout diagram)
VN
Description
The cathode of the respective TVS diode, which should be connected to the node
requiring transient voltage protection.
The anode of the TVS diodes.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Rating
Units
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
Units
−40 to +85
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
CIN
Conditions
Channel Input Capacitance
Min
Typ
Max
Units
TA = 25°C, 0 VDC, 1 MHz; (Note 2)
5
7
pF
TA = 25°C, 2.5 VDC, 1 MHz; (Note 2)
3
0.14
DCIN
Differential Channel I/O to GND Capacitance
TA = 25°C, 2.5 VDC, 1 MHz; (Note 2)
ILEAK
Leakage Current
VIN = 3.5 VDC, TA = 25°C
VSIG
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
I = 5 mA, TA = 25°C
I = −5 mA, TA = 25°C
6.1
−1.5
VESD
ESD Withstand Voltage
Contact Discharge per IEC 61000−4−2 standard
Human Body Model, MIL−STD−883, Method 3015
TA = 25°C; (Notes 2, 4 and 5)
TA = 25°C; (Notes 2, 3 and 5)
±8
±15
RD
1.
2.
3.
4.
5.
Parameter
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
All parameters specified at TA = −40°C to +85°C unless otherwise noted.
These parameters guaranteed by design and characterization.
Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 KW, VN grounded.
Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VN grounded.
These measurements performed with no external capacitor on CHX.
2
pF
0.10
TA = 25°C
(Note 2)
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pF
8.5
−0.4
mA
V
kV
0.7
2.1
W
CM1250−04QG
PERFORMANCE INFORMATION
Diode Capacitance
Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given in Diode
Capacitance vs. Reverse Voltage.
Figure 1. Diode Capacitance vs. Reverse Voltage
Typical High Current Diode Characteristics
Measurements are made in pulsed mode with a nominal pulse width of 0.7 ms.
Figure 2. Typical Input VI Characteristics
(Pulse−mode Measurements, Pulse Width = 0.7 ms nominal)
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3
CM1250−04QG
PACKAGE DIMENSIONS
UDFN6, 1.25x1, 0.4P
CASE 517BM−01
ISSUE O
PIN ONE
REFERENCE
2X
ÉÉ
ÉÉ
L1
E
0.10 C
2X
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
0.10 C
ÉÉÉ
ÉÉÉ
ÇÇÇ
TOP VIEW
EXPOSED Cu
DETAIL B
(A3)
0.10 C
A1
SIDE VIEW
DETAIL A
C
6X
1
6
MOLD CMPD
ÉÉ
ÉÉ
ÇÇ
SEATING
PLANE
L
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.15 REF
0.15
0.25
1.25 BSC
1.00 BSC
0.40 BSC
0.20
0.40
−−−
0.15
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X b
e
DIM
A
A1
A3
b
D
E
e
L
L1
ALTERNATE
CONSTRUCTIONS
3
4
A3
A1
DETAIL B
A
0.08 C
NOTE 4
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L
A B
D
6X
0.25
0.53
0.10 C A B
0.05 C
1.30
NOTE 3
BOTTOM VIEW
PACKAGE
OUTLINE
1
0.40
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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CM1250−04QG/D
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