Comchip MMBTA42 High voltage transistor Datasheet

High Voltage Transistors
COMCHIP
www.comchiptech.com
MMBTA42, MMBTA43
NPN Silicon Type
Features
This device is designed for application as a
video output to drive color CRT and other
high voltage applications
SOT-23
.119 (3.0)
.110 (2.8)
.020 (0.5)
Top View
2
EMITTER
.020 (0.5)
.020 (0.5)
.044 (1.10)
.035 (0.90)
.037(0.95) .037(0.95)
1
BASE
.006 (0.15)
.002 (0.05)
2
.006 (0.15)max.
1
COLLECTOR
3
.056 (1.40)
.047 (1.20)
3
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Symbol
MMBTA42
MMBTA43
Unit
Collector −Emitter Voltage
VCEO
300
200
Vdc
Collector −Base Voltage
VCBO
300
200
Vdc
Emitter −Base Voltage
VEBO
6.0
6.0
Vdc
Rating
Collector Current−Continuous
IC
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MDS0605002A
Page 1
High Voltage Transistors
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted)
Characteristic
Symbol
Min
Max
300
200
−
−
300
200
−
−
6.0
−
−
−
0.1
0.1
−
−
0.1
0.1
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CEO
MMBTA42
MMBTA43
Vdc
V(BR)CBO
MMBTA42
MMBTA43
Emitter −Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MMBTA42
MMBTA43
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MMBTA42
MMBTA43
Vdc
Vdc
Adc
ICBO
Adc
IEBO
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
Both Types
25
40
−
−
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
40
40
−
−
−
−
0.5
0.5
VBE(sat)
−
0.9
Vdc
fT
50
−
MHz
−
−
3.0
4.0
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
hFE
−
VCE(sat)
MMBTA42
MMBTA43
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MMBTA42
MMBTA43
pF
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
MDS0605002A
Page 2
High Voltage Transistors
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (MMBTA42, MMBTA43)
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
80
25°C
60
40
−55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f,
T CURRENT−GAIN BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
80
70
60
50
40
30
TJ = 25°C
VCE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current−Gain − Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ −55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
0.6
VBE(sat) @ −55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ −55°C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. “ON” Voltages
MDS0605002A
Page 3
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