LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. 1 2 Features • We declare that the material of product compliance with RoHS requirements. SC-89 ORDERING INFORMATION Device COLLECTOR 3 † Shipping Maring LMBT2222ATT1G 1P 3000 / Tape & Reel LMBT2222ATT3G 1P 10000 / Tape & Reel 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Rating Collector Current − Continuous MARKING DIAGRAM 1P M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Operating and Storage Junction Temperature Range 1 1P M G = Specific Device Code = Date Code = Pb−Free Package ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL − 20 nAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX − 100 nAdc Characteristic OFF CHARACTERISTICS 1/3 LESHAN RADIO COMPANY, LTD. LMBT2222ATT1G ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) HFE − 35 50 75 100 40 − − − − − − − 0.3 1.0 0.6 − 1.2 2.0 fT 250 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 kW Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre − 4.0 X 10− 4 Small −Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 − Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mmhos Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 4.0 dB (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 Collector −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2/3 LESHAN RADIO COMPANY, LTD. LMBT2222ATT1G SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 −−− −−− 10 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 10 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS 3/3