Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz 80 W, 100 to 500 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications • Characterized for 100 to 500 MHz MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 33 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 9.0 12 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.7 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector–Base Breakdown Voltage (IC = 80 mAdc, IC = 0) V(BR)CBO 60 — — Vdc ICBO — — 5.0 mAdc hFE 20 — 80 — Cob — 95 125 pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF327 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz) GPE 7.3 9.0 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz) η 50 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz, VSWR = 30:1 All Phase Angles) ψ FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power R2 L3 + L2 C12 C13 + – C14 – C15 VCC 28 Vdc L4 L5 R1 C11 RF OUTPUT C10 L1 Z2 DUT RF INPUT Z3 Z1 C5 C1 C2 C3 C6 C7 C8 C9 C4 C1, C2, C7, C8, C9 — 1.0 – 20 pF Piston Trimmer (Johanson JMC 5501) C3, C4 — 36 pF ATC 100 mil Chip Capacitor C5, C6 — 43 pF ATC 100 mil Chip Capacitor C10 — 100 pF UNELCO C11, C15 — 0.1 µF Erie Redcap C12, C13 — 680 pF Feedthru C14 — 1.0 µF 50 V Tantalum L1 — 4 Turns #22 AWG Enameled, 3/16″ ID Closewound with Ferroxcube L1 — Bead (#56–590–65/4B) on Ground End of Coil L2 — Ferroxcube VK200–19/4B Ferrite Choke L3 — 7 Turns #18 AWG, 11/16″ Long, Wound on a 100 kΩ 2.0 Watt Resistor L4 — 6 Turns #20 AWG Enameled, 3/16″ ID Closewound L5 — 4 Turns #22 AWG Enameled, 1/8″ ID Closewound Z1 — Microstrip 0.2″ W x 1.5″ L Z2 — Microstrip 0.17″ W x 1.16″ L Z3 — Microstrip 0.17″ W x 0.63″ L R1, R2 — 10 Ω 2.0 Watt Board — Glass Teflon εr = 2.56, t = 0.062″ Input/Output Connectors Type N DUT Socket Lead Frame Etched from 80–mil–Thick Copper Figure 1. 400 MHz Test Circuit MRF327 2 MOTOROLA RF DEVICE DATA 15 120 G PE , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) Pout = 80 W VCC = 28 V 13 11 9 7 Pin = 15 W 100 80 10 W 60 7.5 W 40 5W VCC = 28 V 5 100 200 300 400 20 100 500 200 300 400 500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Frequency 100 100 9W 80 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pin = 12 W 6W 60 40 20 Pin = 15 W 80 10 W 60 6W 40 20 f = 225 MHz 0 10 14 18 22 26 f = 400 MHz 0 30 10 14 18 22 26 30 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 120 Pout , OUTPUT POWER (WATTS) f = 100 MHz 225 MHz 400 MHz 100 500 MHz 80 60 40 20 VCC = 28 V 0 5 10 15 20 Pin, INPUT POWER (WATTS) Figure 6. Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF327 3 225 Zin f = 100 MHz f = 100 MHz – 10 500 450 –5 225 5 400 400 500 450 10 ZOL* 5 10 Pout = 80 W, VCC = 28 V f MHz Zin Ohms ZOL* Ohms 100 225 400 450 500 0.33 + j0.26 0.56 + j1.64 1.3 + j3.29 1.58 + j2.53 0.82 + j2.9 2.23 – j3.3 2.15 – j0.66 1.27 + j1.0 1.27 + j1.54 1.3 + j2.35 15 20 25 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 7. Series Equivalent Input–Output Impedance MRF327 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B J C E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H A U STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D MOTOROLA RF DEVICE DATA MRF327 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF327 6 ◊ *MRF327/D* MRF327/D MOTOROLA RF DEVICE DATA