N-Channel MOSFET 400V, 2.0A, 3.4Ω General Description Features The MDD3N40 use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD3N40 are suitable device for SMPS and general purpose applications. VDS = 400V ID = 2.0A RDS(ON) ≤ 3.4Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC LED TV Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25oC Continuous Drain Current o TC=100 C Pulsed Drain Current (1) Symbol Rating Unit VDSS 400 V VGSS ±30 V 2.0 A 1.2 A 8.0 A ID IDM o TC=25 C Power Dissipation Derate above 25 oC Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy Avalanche current (4) (1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range 30 W 0.24 W/ oC dv/dt 4.5 V/ns EAR 3.0 mJ PD IAR 2.0 A EAS 45 mJ TJ, Tstg -55~150 o C Thermal Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient(1) Characteristics RθJA 110 Thermal Resistance, Junction-to-Case(1) RθJc 4.1 Feb. 2014 Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDD3N40 N-Channel MOSFET 400V MDD3N40 Part Number Temp. Range MDD3N40RH o -55~150 C Package Packing RoHS Status D-pak Reel Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 400 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 400V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 1.0A - 2.8 3.4 Ω gfs VDS = 30V, ID = 1.0A - 2.0 - S - 5.1 - Drain-Source ON Resistance Forward Transconductance V Dynamic Characteristics Total Gate Charge Qg VDS = 320V, ID = 3.0A, VGS = 10V (3) Gate-Source Charge Qgs - 1.4 - Gate-Drain Charge Qgd - 3.9 - Input Capacitance Ciss - 167 - Reverse Transfer Capacitance Crss - 2 - VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 27 - Turn-On td(on) - 10 - - 30 - - 12 - tf - 25 - Maximum Continuous Drain to Source Diode Forward Current IS - 0.5 - Source-Drain Diode Forward Voltage VSD - - 1.4 V Body Diode Reverse Recovery Time trr - 185 - ns Body Diode Reverse Recovery Charge Qrr - 0.6 - μC Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 200V, ID = 3.0A, RG = 25Ω(3) ns Drain-Source Body Diode Characteristics IS = 3.0A, VGS = 0V IF = 3.0A, dl/dt = 100A/μs(3) A Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤3.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=9.2mH, IAS=3.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C Feb. 2014 Version 1.2 2 MagnaChip Semiconductor Ltd. MDD3N40 N-Channel MOSFET 400V Ordering Information 6 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V Notes 1. 250㎲ Pulse Test 2. TC=25℃ 5 RDS(ON) [Ω ] 3 ID,Drain Current [A] MDD3N40 N-Channel MOSFET 400V 4 2 VGS=10.0V 4 VGS=20V 1 3 5 10 15 20 1 2 VDS,Drain-Source Voltage [V] 4 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 3 1. VGS = 10 V 2. ID = 1.0 A 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 200 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 10 * Notes ; 1. VDS=30V ID [A] IDR Reverse Drain Current [A] 10 150℃ ※ Notes : 1. VGS = 0 V 2. 250s Pulse Test 150℃ 25℃ 1 25℃ 0.1 0.0 1 4 6 8 10 Fig.5 Transfer Characteristics Feb. 2014 Version 1.2 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD3N40 N-Channel MOSFET 400V 300 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss ※ Note : ID = 3A 80V VGS, Gate-Source Voltage [V] 200V 320V Capacitance [pF] 8 6 4 200 Ciss ※ Notes ; 100 1. VGS = 0 V 2. f = 1 MHz Crss 2 0 0 0 2 4 1 6 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 2.0 1 100 s 1.5 1 ms 10 ms 10 0 ID, Drain Current [A] ID, Drain Current [A] 10 100 ms 10s 1s DC 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] -1 1.0 0.5 Single Pulse TJ=Max rated TC=25℃ 10 -2 10 -1 10 0 10 1 10 0.0 25 2 50 Fig.9 Maximum Safe Operating Area 125 150 single Pulse 4000 1 TC = 25℃ 0.1 0.05 Power (W) Zθ JC(t), Thermal Response 100 Fig.10 Maximum Drain Current vs. Case Temperature D=0.5 0.2 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 0.02 0 10 0.01 2000 single pulse -1 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JA=60℃/W 0 1E-5 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Feb. 2014 Version 1.2 1E-4 4 MagnaChip Semiconductor Ltd. MDD3N40 N-Channel MOSFET 400V Physical Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified Feb. 2014 Version 1.2 5 MagnaChip Semiconductor Ltd. MDD3N40 N-Channel MOSFET 400V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Feb. 2014 Version 1.2 6 MagnaChip Semiconductor Ltd. Date Version 6/21/2011 Version 1.1 Change Content Divided D-Pak & I-Pak datasheet Updator Tris Kim Change POD Feb. 2014 Version 1.2 7 MagnaChip Semiconductor Ltd. MDD3N40 N-Channel MOSFET 400V Revision History