QFET ® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. • • • • • • • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers • RoHS Compliant D ! D " ! " " " G! G S I-PAK D-PAK FQD Series G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD5N20L / FQU5N20L 200 Units V 3.8 A 2.4 A 15.2 A - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD - Pulsed (Note 1) ± 20 V (Note 2) 60 mJ Avalanche Current (Note 1) 3.8 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 3.7 5.5 2.5 mJ V/ns W 37 0.29 -55 to +150 W W/°C °C 300 °C (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 3.4 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD5N20L / FQU5N20L October 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.18 IDSS IGSSF IGSSR VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 1.9 A VGS = 5 V, ID = 1.9 A -- 0.94 0.98 1.2 1.25 Ω Forward Transconductance VDS = 30 V, ID = 1.9 A -- 3.35 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 250 325 pF -- 40 50 pF -- 6 8 pF ns Zero Gate Voltage Drain Current On Characteristics VGS(th) RDS(on) gFS (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 4.5 A, RG = 25 Ω VDS = 160 V, ID = 4.5 A, VGS = 5 V (Note 4, 5) (Note 4, 5) -- 9 25 -- 90 190 ns -- 15 40 ns -- 50 110 ns -- 4.8 6.2 nC -- 1.2 -- nC -- 2.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.8 A ISM -- -- 15.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 3.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 95 -- ns Qrr Reverse Recovery Charge -- 0.3 -- µC VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.2mH, IAS = 3.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD5N20L / FQU5N20L Electrical Characteristics FQD5N20L / FQU5N20L Typical Characteristics ID, Drain Current [A] Top : Bottom : VGS 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V 1 10 ID , Drain Current [A] 1 10 0 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = 30V 2. 250μs Pulse Test ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -1 10 -1 -1 0 10 10 1 10 0 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 1 IDR , Reverse Drain Current [A] 10 RDS(ON) [Ω ], Drain-Source On-Resistance 6 VGS = 5V VGS = 10V 4 2 0 10 150℃ -1 0 0 2 4 6 8 10 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 300 Ciss 200 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Coss 100 Crss 0 -1 10 VGS, Gate-Source Voltage [V] 400 Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ ※ Note : TJ = 25℃ VDS = 40V 8 VDS = 100V VDS = 160V 6 4 2 ※ Note : ID = 4.5 A 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International 0 2 4 6 8 10 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A3, October 2008 FQD5N20L / FQU5N20L Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 4 Operation in This Area is Limited by R DS(on) 3 1 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 ※ Notes : 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C( t) = 3 .4 ℃ /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θ J C( t) 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 -1 0 .0 1 10 -5 t1 s in g le p u ls e Z θ JC 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD5N20L / FQU5N20L Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 5V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2008 Fairchild Semiconductor International ID (t) VDS (t) VDD tp Time Rev. A3, October 2008 FQD5N20L / FQU5N20L Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD5N20L / FQU5N20L Mechanical Dimensions D - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD5N20L / FQU5N20L Mechanical Dimensions I - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ FQD5N20L / FQU5N20L TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FQD5N20L / FQU5N20L Rev. A3 www.fairchildsemi.com