Datasheet µPD166034T1U INTELLIGENT POWER DEVICE R07DS1168EJ0200 Rev.2.00 May 22, 2015 1. Overview 1.1 Description Family: µPD166034T1U is part of 2nd Generation Intelligent Power Devices (IPD). They are N-channel high-side switches with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number combination. Scalability: Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design depending on target load. Robustness: Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against long term and repetitive short circuit condition. 1.2 Features • • • • • • • • • • • • Built-in charge pump 3.3V compatible logic interface Low standby current Short circuit protection Shutdown by over current detection Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control) Absolute Tch over temperature protection Built-in diagnostic function Proportional load current sensing Defined fault signal in case of abnormal load condition Loss of ground protection Under voltage lock out Active clamp operation at inductive load switch off Cross current protection in case of H-bridge high side usage Reverse battery protection by turn on the output AEC Qualified RoHS compliant 1.3 Application • Light bulb switching from 55W to 75W according to on-state resistance • Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor • Power supply switch, fail-safe switch of 14V DC grounded system Note: The information contained in this document is the one that was obtained when the document was issued, and may be subject to change. R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 1 of 39 µPD166034T1U Datasheet 2. Ordering Information 2. Ordering Information Part No. UPD166034T1U-E1-AY Note: Nick name NHS008A Lead plating Pure Matte Sn Packing Tape 2500 p/reel Package TO252-7 Part No. and Nick name are tentative and might change at anytime without notice. 2.1 Nick name N H S 008 A On-state resistance S: Single channel D: Dual channel Q: Quad channel A: TO252-7 B: 12-pin Power HSSOP C: 24-pin Power HSSOP Nch High-side R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 2 of 39 µPD166034T1U Datasheet 3. Specification 3. Specification 3.1 Block Diagram 3.1.1 Nch High-side Single Device Voltage and Current Definition R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 3 of 39 µPD166034T1U Datasheet 3. Specification 3.2 Pin Configuration Tab 3.2.1 TO252-7 Pin Configuration Pin No. 1 2 3 4, Tab 5 6 7 Terminal Name OUT GND IN VCC IS SEN OUT 1 2 3 4 5 6 7 Pin function Terminal Name GND Pin function Ground connection Recommended connection Connected to GND through a 100 Ω resistor Refer chapter 6. IN Input signal IS Current sense and Diagnosis output signal Connected to MCU port through 2k-50K serial resistor. Connected to GND through a 0.67K-5K resistor. Not connect if this pin is not used. SEN Sense enable input Connected to MCU port through 2k-50K serial resistor. Not connect if this pin is not used. OUT Protected high-side power output Connected to load with small 50-100nF capacitor in parallel. VCC Positive power supply for logic supply as well as output power supply Connected to battery voltage with small 100nF capacitor in parallel. R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 4 of 39 µPD166034T1U Datasheet 3. Specification 3.3 Absolute Maximum Ratings Ta=25°C, unless other specified Parameter Vcc Voltage Vcc Voltage at reverse battery condition Symbol VCC -VCC Rating 28 -16 Unit V V Vcc voltage under Load Dump condition Load Current Total power dissipation for whole device (DC) Vload dump 42 V IL PD Self limited 1.85 A W Voltage at IN pin VIN -2 ~ 16 V -16 IN pin current Voltage at IS pin IIN VIS 10 VCC mA V -16 V IS Reverse current at reverse battery condition IIS(Rev) -30 mA Voltage at SEN pin VSEN -2 ~ 16 V -16 SEN pin current Channel Temperature Storage Temperature ESD susceptibility ISEN Tch Tstg VESD 10 -40 to +150 -55 to +150 2000 mA °C °C V 4000 200 Inductive load switch-off EAS 210 energy dissipation single pulse Inductive load switch-off EAR 150 energy dissipation repetitive pulse Remark) All voltages refer to ground pin of the device R07DS1168EJ0200 Rev.2.00 May 22, 2015 Test Condition RL=1.5Ω, t<2min, RIN=2kΩ, RSEN=2kΩ, RIS=1kΩ, RGND=100Ω RI=1Ω, RL=1.5Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ, RGND=100Ω, td=400ms Ta=85°C, Device on 50mm×50mm×1.5mm epoxy PCB FR4 with 6 cm2 of 70 µm copper area DC RIN=2kΩ At reverse battery condition, t<2min, RIN=2kΩ, RSEN=2kΩ DC DC RIS=1kΩ At reverse battery condition, t<2min, RL=1.5Ω, RIS=1kΩ At reverse battery condition, t<2min, RL=1.5Ω DC RSEN=2kΩ At reverse battery condition, t<2min RIN=2kΩ, RSEN=2kΩ DC HBM AEC-Q100-002 std. R=1.5kΩ, C=100pF All pin mJ IEC61000-4-2 std. VCC, OUT R=330Ω, C=150pF, 100nF at VCC and OUT MM AEC-Q100-003 std. R=0Ω, C=200pF VCC=13.5V, Tch,start<150°C, RL=1.5Ω mJ VCC=13.5V, Tch,start=85°C, RL=1.5Ω V Page 5 of 39 µPD166034T1U Datasheet 3. Specification 3.4 Thermal Characteristics Parameter Thermal characteristics Symbol Rth(ch-a) Rth(ch-c) R07DS1168EJ0200 Rev.2.00 May 22, 2015 Min Typ 35 0.8 Max Unit °C/W Test Condition According to JEDEC JESD51-2, -5, -7 on FR4 2s2p board °C/W Page 6 of 39 µPD166034T1U Datasheet 3. Specification 3.5 Electrical Characteristics Operation function Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified Parameter Operating Voltage VCC Operating current Output Leakage current IGND IL(off) Symbol Min 4.5 Typ Max 28 Unit V Test Condition VIN=4.5V, RL=1.5Ω 2.2 4 0.5 mA µA VIN=4.5V Tch=25°C 5 Standby current ICC(off) 0.5 Tch=-40~125°C µA 1.5 On-state resistance Ron Low level IN pin voltage High level IN pin voltage Low level IN pin current High level IN pin current Clamping IN pin voltage 1) Low level SEN pin voltage High level SEN pin voltage Low level SEN pin current High level SEN pin current Clamping SEN pin voltage1) Under voltage shutdown Under voltage restart Turn on time Turn on delay time Turn off time Turn off delay time Slew rate on Slew rate off Switching drift1) VIL VIH IIL IIH VZIN VSENL VSENH ISENL ISENH VZSEN VCC(Uv) VCC(Cpr) ton td(on) toff td(off) dV/dton -dV/dtoff ton-toff Turn on energy loss 1) Turn off energy loss 1) Driving capability 1) Eon Eoff Dr(capa) 8 Tch=-40~85°C mΩ 16 0.8 2.5 2 2 5 25 25 6 0.8 2.5 2 2 5 25 25 6 4.5 5.0 200 100 200 150 1.0 1.0 +50 -50 1.2 1.2 115 145 2.4 2.4 Tch=25°C V V µA µA V V V µA µA V V V µs µs µs µs V/µs V/µs µs mJ mJ mΩ Tch=25°C Tch=150°C VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, VOUT=0V, VGND=0V VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, VOUT=0V, VGND=0V IL=9A VIN=0.8V VIN=2.5V VSEN=0.8V VSEN=2.5V VCC=13.5V, RL=1.5Ω Vcc = 9 to 18V drift from Vcc=13.5V, Tch=-40 to 150°C drift from Tch=25°C ton; Vout=Vcc-1.5V after input signal active VCC=13.5V,Tch=25°C, RL=1.5Ω Tch=25°C, VCC=8~16V Tch=105°C, VCC=8~16V Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 7 of 39 µPD166034T1U Datasheet 3. Specification Protection function Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified Parameter Over current detection current Current limitation under power limitation toggling Current limitation under absolute thermal toggling Current limitation trigger threshold during turn-on Current limitation trigger threshold during on-state Current limitation trigger time after input signal positive slope Absolute thermal shutdown temperature Thermal hysteresis for absolute thermal toggling Power limitation thermal shutdown temperature Power limitation restart temperature Output clamp at inductive load switch off Output current while GND disconnection On-state resistance at reverse battery condition Symbol IL(SC) Min 80 Typ 130 Ron(rev) 9 Gnd current at reverse battery condition IGND(rev) -2 Max Unit A Test Condition VCC=13.5V, Von=5V, Tch=25°C IL(CL) 60 A VCC=13.5V IL(TT) 25 A VCC=13.5V Von(CL1) 1.0 V VCC=13.5V Von(CL2) 0.3 V VCC=13.5V td(CL) 500 µs VCC=13.5V aTth 150 °C aTth,hys 20 °C dTth 40 °C dTth,rest art Von,clam p IL(GND) 20 °C 30 40 V 1 mA IIN=0A, ISEN=0A, IGND=0A, IIS=0A mΩ Tch=25°C Tch=150°C mA VCC=-16V, Tch=25°C, IIN=0A, ISEN=0A, IIS=0A 18 VCC=13.5V, IL=40mA, Tch=25°C VCC=-13.5V, IL=9A Remark) All voltages refer to ground pin of the device R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 8 of 39 µPD166034T1U Datasheet 3. Specification Diagnosis function Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Current sense ratio Symbol KILIS Current sense drift depend on temperature dKILIS Sense current offset current Min 7520 6580 -15 Typ 9400 9400 Max 11280 12220 15 Unit Iis,offset 2 µA VCC=13.5V, Tch,start=25°C, RL=1.5Ω IL<10mA Sense current leakage current Iis,dis 1 µA VIN=0V, VSEN=0V Sense current under fault condition Iis,fault 3 3.5 3.5 9.5 9 5.5 mA VCC=13.5V, RIS=0.67kΩ VCC=13.5V, RIS=1kΩ VCC=13.5V, RIS=2kΩ Minimum output current for current sense output IL(CSE) 10 100 mA IIS>5µA Open load detection threshold at off-state VOUT(OL) 2.0 5.0 V VIN=0V, Tch = -40~105°C OUT terminal current at Open load condition IOUT(OL) -1.0 µA VIN =0V Open load detection delay after input negative slope tdop µs VIN=4.5V to 0V, VOUT>VOUT(OL) 300 Test Condition IL=9.2A IL=1.8A % Remark) All voltages refer to ground pin of the device R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 9 of 39 µPD166034T1U Datasheet 3. Specification Diagnosis function Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Sense current settling time after input signal positive slope Symbol tsis(on) Min Typ Max 250 Unit µs Test Condition VCC=13.5V, VIN=0V to 4.5V, IL/IIS=KILIS, RL=1.5Ω Sense current settling time after input signal negative slope 1) tsis(off) 10 µs VIN=4.5V to 0V Sense current settling time after sense enable during on-state 1) tssen(on) 20 µs VSEN=0V to 4.5V, RL=1.5Ω Sense current settling time after sense disable during on-state 1) tssen(off) 20 µs VSEN=4.5V to 0V, RL=1.5Ω Sense current settling time during on-state 1) tsis(LC) 20 µs RL=1.5Ω to 0.75Ω Fault signal delay after over current detection 1) tdsc(fault) 10 µs VIN=0V to 4.5V, IL=IL(SC) Fault signal delay after power limitation valid 1) tdpl(fault) 10 µs Von>Von(CL1) Fault signal delay after power limitation invalid 1) tdpl(off) 30 µs Von<Von(CL1) Fault signal delay after absolute thermal shutdown tdot(fault) 10 µs IIS→IIS,fault Fault signal delay after open load detection at offstate 1) tdop(fault) 10 µs VIN=0V, VOUT>VOUT(OL) Fault signal delay after input negative slope 1) tdoff(fault) 10 µs VIN=4.5V to 0V 1) Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 10 of 39 µPD166034T1U Datasheet 3. Specification 3.6 Feature Description 3.6.1 Driving Circuit The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is pulled down with constant current source. VIN IN 0 RESD VOUT IIN Vcc Internal ground OFF ON OFF ON 0 GND t Switching a resistive load Switching lamps VIN VIN 0 0 IL IL 0 0 VOUT VOUT Vcc 0 0 IIS IIS 0 R07DS1168EJ0200 Rev.2.00 May 22, 2015 t 0 IIS,lim t Page 11 of 39 µPD166034T1U Datasheet 3. Specification Switching an inductive load VIN 0 IL 0 VOUT Vcc 0 Von,clamp IIS 0 t The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. VCC RESD IN SEN ZDAZ ZDAZ RESD SW1 logic ZDESD OUT Internal ground GND R07DS1168EJ0200 Rev.2.00 May 22, 2015 IS Page 12 of 39 µPD166034T1U Datasheet 3. Specification 3.6.2 Device behavior at over voltage condition In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC. VCC IN RIN SEN RESD RESD logic RSEN ZDAZ ZDESD ZDAZ N-ch MOSFET ZDESD uC OUT IPD Internal ground GND IS RGND RIS RL 3.6.3 Device behavior at low voltage condition If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown. The IS output is cleared during off-state. VIN 0 IL 0 VCC VOUT VCC(Uv) VCC(CPr) 0 t 3.6.4 Loss of Ground protection In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state. In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage. R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 13 of 39 µPD166034T1U Datasheet 3. Specification 3.6.5 Short circuit protection Turn-on in an over load condition including short circuit condition The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The device starts current limitation when (d) is detected. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. (a) IL > IL(SC) (b) deltaTch > dTth (c) Tch > aTth (d) Von > Von(CL1) after td(CL) Over load condition including short circuit condition during on-state The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2). The device shuts down automatically when condition (b) is detected. The device restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. (a) Von > Von(CL2) (b) deltaTch > dTth (c) Tch > aTth Power limitation control Current limitation control with IL(CL) when auto restart from deltaTch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with power limitation mode. Absolute thermal toggling Current limitation control with IL(TT) when auto restart from absolute Tch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with thermal toggling mode. delta Tch Junction temperature differences between thermal sensor of power area and thermal sensor of control area. R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 14 of 39 µPD166034T1U Datasheet 3. Specification State transition diagram Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Yes Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No IN = Low No Yes Input C Return Shutting down No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B Return No C Turn-off R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 15 of 39 µPD166034T1U Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (a) IL > IL(SC) Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No Yes IN = Low No Yes Input C Return Shutting down? No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B No Return Before over current detection C Turn-off R07DS1168EJ0200 Rev.2.00 May 22, 2015 After over current detection Exit from off-latch Page 16 of 39 µPD166034T1U Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (b) deltaTch > dTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No Yes IN = Low No Yes Input C Return Shutting down? No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B No Return Before dTcht detection C Turn-off During shutdowning by dTth detection During current limitation control Power limitation control Exit from power limitation control R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 17 of 39 µPD166034T1U Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (c) Tch > aTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No Yes IN = Low No Yes Input C Return Shutting down? No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B No Return Before aTcht detection C Turn-off During shutdowning by aTth detection During current limitation control Thermal toggling Exit from power limitation control R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 18 of 39 µPD166034T1U Datasheet 3. Specification An over load condition which is include a short circuit condition during on-state (a) Von > Von(CL) with weak short condition Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No Yes IN = Low No Yes Input C Return Shutting down? No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B No Return Before Von(CL) detection after turn on C Turn-off After Von(CL) detection During shutdowning by dTth detection During current limitation control Power limitation control Exit from power limitation control R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 19 of 39 µPD166034T1U Datasheet 3. Specification An over load condition including short circuit condition during on-state (a) Von > Von(CL) with dead condition Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No Yes IN = Low No Yes Input C Return Shutting down? No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B No Return Before Von(CL) detection after turn on C Turn-off After Von(CL) detection After over current detection Exit from power limitation control R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 20 of 39 µPD166034T1U Datasheet 3. Specification An over load condition including short circuit condition during on-state (b) deltaTch > dTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No Yes IN = Low No Yes Input C Return Shutting down? No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B No Return Before dTth detection after turn on C Turn-off R07DS1168EJ0200 Rev.2.00 May 22, 2015 During shutdowning by dTth d t ti Exit from thermal protection control Page 21 of 39 µPD166034T1U Datasheet 3. Specification An over load condition including short circuit condition during on-state (c) Tch > aTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal IL(lim)=IL(TT) Input Return B Yes No Yes Von < Von(CL2) Current limitation No Thermal td(CL) unexpired No A Yes dTch > dTth Yes Thermal IL > IL(lim) B No No Yes Shutdown IL(lim)=IL(CL) Input Input Over current C No Yes IN = Low No Yes Input C Return Shutting down? No Yes IL > IL(NL) Yes IN = Low Yes Von=Von(NL) No Turn-on B No Return Before aTth detection after turn on C Turn-off R07DS1168EJ0200 Rev.2.00 May 22, 2015 During shutdowning by aTth d t ti Exit from thermal protection control Page 22 of 39 µPD166034T1U Datasheet 3. Specification 3.6.6 Device behavior at small load current conduction The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction. Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to increase to be Von=Von(NL)=30mV(typ). Von Von(NL) IL(NL) R07DS1168EJ0200 Rev.2.00 May 22, 2015 IL Page 23 of 39 µPD166034T1U Datasheet 3. Specification 3.6.7 Diagnostic signal Truth table SEN Normal Operation H Shutdown by over current detection Input H L H L H Power limitation L H Thermal toggling Short circuit to VCC Open Load X 8) L L H L H L X 8) Output VCC L 1) L 1) L 1) VOUT 6) L 1) L 1) VOUT 6) L 1) L 1) VCC VOUT 7) VCC VOUT 7) X 8) Diagnostic output 2) IIS = IL/KILIS < 1µA (Iis,dis) Iis,fault 3) < 1µA (Iis,dis) IIS = IL/KILIS in case of Von<Von(CL1) Iis,fault 4) in case of Von>Von(CL1) Iis,fault 4) < 1µA (Iis,dis) IIS = IL/KILIS in case of Von<Von(CL1) Iis,fault 5) in case of Von>Von(CL1) Iis, fault 5) < 1µA (Iis,dis) < 2µA (Iis,offset) Iis,fault in case of VOUT>VOUT(OL) < 2µA (Iis,offset) Iis,fault in case of VOUT>VOUT(OL) < 1µA (Iis,dis) 1) In case of OUT terminal is connected to GND via load. 2) In case of IS terminal is connected to GND via resister. 3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection. 4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1). 5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1).. 6) VOUT depends on the short circuit condition 7) VOUT depends on the ratio of VCC-OUT-GND resistive component. 8) Don’t care R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 24 of 39 µPD166034T1U Datasheet 3. Specification Current sense output The device output analog feedback current proportional to output current from IS pin. In the case of much higher current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load current, current sense output is above 5µA if output current is above IL(CSE) max, current sense output is below 2µA, IIS,offset max, if output current is below IL(CSE) min. IIS IIS KILIS=IL/IIS 5µA 2µA IL IIS,offset IL IL(CSE) Sense current under fault condition The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection, during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kΩ condition. IIS,fault is attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For example, In the case of RIS=1kΩ, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kΩ, Operation point as IIS,fault is lower than specified value but VIS should be higher than RIS=1kΩ condition. IIS,fault 1kΩ load line VCC 9mA VCC-VIS VCC IS 3.5mA GND VIS VCC-VIS VIS RIS VCC-VIS VCC R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 25 of 39 µPD166034T1U Datasheet 3. Specification Sense current settling time VIN VSEN VOUT tsis(on) tssen(off) tssen(on) tsis(LC) tsis(LC) tsis(off) IIS Fault signal delay time at over current detection VIN VSEN Over current detection VOUT Iis,fault IIS tdsc(fault) R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 26 of 39 µPD166034T1U Datasheet 3. Specification Fault signal delay time at power limitation VIN VSEN Short circuit appear Short circuit disappear Power limitation VOUT tdpl(fault) IIS tdpl(off) Iis,fault Fault signal delay time at Thermal toggling VIN VSEN Short circuit appear Power limitation VOUT Short circuit disappear Thermal toggling tdpl(fault) tdpl(off) Iis,fault IIS tsis(off) R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 27 of 39 µPD166034T1U Datasheet 3. Specification Fault signal delay time at open load detection VIN VSEN Open load condition appear Open load detection Open load detection VOUT Iis,fault tdop IIS tdop(fault) Iis,dis Iis,offset 3.6.8 Nominal load Product NHS008A R07DS1168EJ0200 Rev.2.00 May 22, 2015 Nominal load 1.5Ω Page 28 of 39 µPD166034T1U Datasheet 3. Specification 3.6.9 Driving Capability Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving Capability characteristics. IL [A] VIN IL(SC) specified point NHS008A: 80A t 128 IL(SC) characteristics 5 13.5 IL Von [V] t Driving Capability: 30ms NHS008A:115mΩ 3.6.10 Cross current protection in case of H-bridge high side usage In case of using High side driver in H-bridge circuit, Vbat High side driver protects High side driver itself and also low side driver from high power dissipation by cross current when low side driver switching on. VCC OFF VCC IN OUT Cross current PWM ON R07DS1168EJ0200 Rev.2.00 May 22, 2015 ON IN OUT M Motor current OFF Page 29 of 39 µPD166034T1U Datasheet 3. Specification 3.6.11 Reverse Battery Protection by turn on the output In case of a reverse battery is applied to the device, the N-ch MOSFET will turn on only if reverse current flow from GND pin. The reverse current through the N-ch MOSFET has to be limited by the connected load. IGND(rev) is limited internally approx. 2mA even without external RGND. Reverse current flow from IN, SEN, IS should be limited by external component such as recommendation value in Pin function, refer 3.2 Pin configuration. IN RIN VCC SEN RSEN N-ch MOSFET OUT uC IPD GND IS IGND(rev) IL(rev) RGND RIS RL 3.6.12 Measurement condition Switching waveform of OUT terminal VIN ton toff td(on) td(off) 90% 70% VOUT dV/dton 30% 10% R07DS1168EJ0200 Rev.2.00 May 22, 2015 90% 70% -dV/dtoff 30% 10% Page 30 of 39 µPD166034T1U Datasheet 3. Specification 3.7 Package drawing R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 31 of 39 µPD166034T1U Datasheet 3. Specification 3.8 Taping information 3.9 Marking information 66034 R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 32 of 39 µPD166034T1U Datasheet 4. Typical characteristics 4. Typical characteristics R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 33 of 39 µPD166034T1U Datasheet 4. Typical characteristics R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 34 of 39 µPD166034T1U Datasheet 4. Typical characteristics R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 35 of 39 µPD166034T1U Datasheet 4. Typical characteristics R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 36 of 39 µPD166034T1U Datasheet 4. Typical characteristics R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 37 of 39 µPD166034T1U Datasheet 5. Thermal characteristics 5. Thermal characteristics R07DS1168EJ0200 Rev.2.00 May 22, 2015 Page 38 of 39 µPD166034T1U Datasheet 6. Application example in principle 6. Application example in principle RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ. If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s value is typically 100kΩ GND Network recommendation In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V Vbat Vbat VCC VCC GND GND RGND No external component is required. R07DS1168EJ0200 Rev.2.00 May 22, 2015 External resistor is recommended in order to limit the current through ZDAZ at load dump condition. 100Ω is recommended as RGND. Page 39 of 39 Revision History Rev. 1.00 2.00 Date Mar 27, 2014 May 22, 2015 µPD166034T1U Datasheet Page 1-38 23 Description Summary 1st issue "Device behavior at small load current conduction" is added. All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. 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