EPIGAP EPC-1300-0.5-2 Photodiode-chip Datasheet

Photodiode-Chip
EPC-1300-0.5-2
16.05.2008
rev. 03
Wavelength range
Type
Technology
Electrodes
Infrared
Planar
InGaAs/InP
P (anode) up
typ. dimensions in µm
850 ±20
Ø 500
typ. thickness
Description
330 (±20) µm
Broadband photodiode with
maximum response in the
NIR-region and enhanced
responsivity in the visible
range
anode (pin 1)
1
bond gold 1.0 µm
Applications
gold alloy, 0.5 µm
Optical communications,
safety equipment, light
barriers
*also pin 2, for measuring
purposes
Ø 120
Ø 120
850 ±20
2
cathode (rear*)
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Test сonditions
Parameter
Symbol
Value
Unit
A
0.196
mm²
Operating temperature range
Tamb
-40 to +125
°C
Storage temperature range
Tstg
-40 to +125
°C
TC(ID)
7.4
%/K
Typ
Max
Unit
Active area
Temperature coefficient of ID
T = -40…120°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
IF = 10 mA
Forward voltage
2)
Symbol
Min
VF
0.8
V
IR = 10 µA
VR
5
Sensitivity range at 10 %
VR = 0 V
λ
440
Spectral bandwidth at 50 %
VR = 0 V
∆λ0,5
680
nm
Responsivity at 1300 nm
VR = 0 V
Sλ
0.9
A/W
Dark current
VR = 5 V
ID
250
Shunt resistance
VR = 10 mV
RSH
Noise equivalent power
λ = 1300 nm
Specific detectivity
λ = 1300 nm
D*
VR = 0 V
CJ
Breakdown voltage
1)
Junction capacitance
1)
2)
V
1710
0.5
NEP
nm
1000
pA
1.0
1.1x10
GΩ
-14
4.0x10
12
W/ Hz
cm ⋅ Hz ⋅ W −1
45
pF
measured on bare chip on TO-18 header
for information only
Labeling
Type
Typ. ID [pA]
Typ. Sλ[A/W]
Lot N°
Quantity
EPС-1300-0.5-2
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Photodiode-Chip
EPC-1300-0.5-2
16.05.2008
rev. 03
T y p ic a l O p tic a l R e s p o n s iv ity
1 ,2
Responsivity (A/W)
1 ,0
0 ,8
0 ,6
0 ,4
0 ,2
0 ,0
400
600
800
1000
1200
1400
1600
1800
W a v e le n g th [n m ]
D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re
Dark Current [nA]
100
T K = 0 .7 4 % /K
10
1
20
40
60
80
100
120
A m b ie n t T e m p e ra tu re [°C ]
Short-Circuit Current [arb. units]
S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T C ]
1 ,0 4
1 ,0 2
1 ,0 0
0 ,9 8
T C (I S H ) = -0 .3 7 % /K
0 ,9 6
0 ,9 4
0 ,9 2
0 ,9 0
0
20
40
60
80
100
120
140
A m b ie n t T e m p e ra tu re [°C ]
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
2 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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