MOTOROLA MRF20060S Rf power broadband npn bipolar Datasheet

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by MRF20060/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
The MRF20060 and MRF20060S are designed for broadband commercial
and industrial applications at frequencies from 1800 to 2000 MHz. The high
gain, excellent linearity and broadband performance of these devices make
them ideal for large–signal, common emitter class A and class AB amplifier
applications. These devices are suitable for frequency modulated, amplitude
modulated and multi–carrier base station RF power amplifiers.
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
• Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
• Designed for FM, TDMA, CDMA and Multi–Carrier Applications
CASE 451–04, STYLE 1
(MRF20060)
CASE 451A–01, STYLE 1
(MRF20060S)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vdc
Collector–Emitter Voltage
VCES
60
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Collector–Emitter Voltage (RBE = 100 Ohm)
VCER
30
Vdc
VEB
–3
Vdc
Collector Current – Continuous
IC
8
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
0.7
°C/W
Collector–Emitter Voltage (IB = 0 mA)
Base–Emitter Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1997
MRF20060 MRF20060S
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
25
26
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
60
69
—
Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
60
69
—
Vdc
Reverse Base–Emitter Breakdown Voltage
(IB = 10 mAdc, IC = 0)
V(BR)EBO
3
3.5
—
Vdc
ICES
—
—
10
mAdc
hFE
20
40
80
—
Cob
—
55
—
pF
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gpe
9
9.4
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
33
35
—
%
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
– 33
– 30
dB
Input Return Loss
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
12
19
—
dB
OFF CHARACTERISTICS
Zero Base Voltage Collector Leakage Current
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 5 Vdc, IC = 1 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψ
No Degradation in Output Power
(1) For Information Only. This Part Is Collector Matched.
MRF20060 MRF20060S
2
MOTOROLA RF DEVICE DATA
VBB
R1
L5
Q2
L1
D1
B1
L3
VCC
C9
C7
+
+
Q1
C12
C6
C3
C1
R2
R4
C10
C8
C14
C15
R3
L4
L2
Z6
RF
INPUT
Z1
Z3
Z4
Z7
Z9
C4
Z10
Z5
C11
C2
B1
C1
C2, C4, C13
C3, C14
C5
C6, C12
C7, C9
C8, C10
C11
C15
Z2
C5
Ferrite Bead, P/N 5659065/3B, Ferroxcube
100 µF, 50 V, Electrolytic Capacitor, Mallory
0.6–4.0 pF, Variable Capacitor, Gigatrim, Johanson
0.1 µF, Chip Capacitor, Kemit
15 pF, B Case Chip Capacitor, ATC
1000 pF, B Case Chip Capacitor, ATC
91 pF, B Case Chip Capacitor, ATC
24 pF, B Case Chip Capacitor, ATC
13 pF, B Case Chip Capacitor, ATC
470 µF, 50 V, Electrolytic Capacitor, Mallory
DUT
D1
L1, L5
L2, L4
L3
R1
R2
R3, R4
Q1
Q2
Board
RF
OUTPUT
C13
Diode, Motorola (MUR3160T3)
12 Turns, 22 AWG, 0.140″ Choke
.5 inch of 20 AWG, ID Choke
12.5 nH Inductor
2 x 130 Ω, 1/8 W Chip Resistor, Rohm
2 x 100 Ω, 1/8 W Chip Resistor, Rohm
10 Ω, 1/2 W, Resistor
Transistor, PNP Motorola (BD136)
Transistor, NPN Motorola (MJD47)
Glass Teflon, Arlon GX–0300–55–22, εr = 2.55
Figure 1. Class AB, 1.93 – 2 GHz Test Fixture Electrical Schematic
MOTOROLA RF DEVICE DATA
MRF20060 MRF20060S
3
Vsupply
+
C3
R1
R5
R2
Q1
VCC
R3
VCC
Q2
R6
R4
R9
+
C6
R7
B1
L3
C8
R8
+
C10
C13
C11
C14
R10
L2
L1
C5
N1
RF
INPUT
C1
Z2
RF
OUTPUT
C4
C2
Z5
Z1
N2
C12
C7
Z3
Z4
Z6
Z7
DUT
C9
B1
C1, C2
C3, C8
C4, C12
C5, C11
C6
C7, C10
C9
C13
C14
L1
L2
L3
Short Bead, Fair Rite
0.6–4.5 pF, Trimmer, Gigatrim, Johanson
100 µF, 50 V Electrolytic, Mallory
12 pF, Chip Capacitor, ATC
91 pF, Chip Capacitor, ATC
0.01 mF, Chip Capacitor, ATC
24 pF, Chip Capacitor, ATC
0.4–2.5 pF, Trimmer, Gigatrim, Johanson
0.1 mF, Chip Capacitor, ATC
470 mF, 63 V Electrolytic, Mallory
2 Turn, 27 AWG, 0.049″ ID Coil
0.041″ dia., 0.7″ Length Wire
11 Turn, 20 AWG, 0.19″ ID Coil
N1, N2
Q1
Q2
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
Board
Type N Flange Mount RF 55–22,
Connector, Omni Spectra
Transistor, NPN, Motorola (BD135)
Transistor, PNP, Motorola (BD136)
270 W, Chip Resistor, 1/8 Watt, Rohm
10 KW, 1/4 Watt, Potentiometer
4.7 KW, Chip Resistor, 1/8 Watt, Rohm
2 x 4.7 KW, Chip Resistor, 1/8 Watt, Rohm
1.0 W, 25 Watt, 1% Resistor, DALE
38 W, Axial Lead, 1 Watt Resistor
4.2 KW, Chip Resistor, 1/8 Watt, Rohm
3 x 39 W, Chip Resistors, 1/8 Watt, Rohm
2 x 10 W, Chip Resistor, 1/8 Watt, Rohm
10 W, Axial Lead, 1 Watt Resistor
Glass Teflon, Arlon GX–0300–55–22,
εr = 2.55
Figure 2. Class A, 1.93 – 2 GHz Test Fixture Electrical Schematic
MRF20060 MRF20060S
4
MOTOROLA RF DEVICE DATA
11.5
70
60
11
60
Pout
10.5
10
40
Gpe
9.5
30
9
20
VCC = 26 Vdc
ICQ = 200 mA
f = 2000 MHz Single Tone
10
8.5
2
0
6
4
Pin, INPUT POWER (WATTS)
8
40
3W
30
20
1850
1900
f, FREQUENCY (MHz)
1950
2000
Figure 4. Output Power versus Frequency
– 20
–10
10.5
3rd Order
–15
10
– 30
Gpe
5th Order
9.5
–20
9
–25
G pe , GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
VCC = 26 Vdc
ICQ = 200 mA
0
1800
Figure 3. Output Power & Power Gain
versus Input Power
– 40
7th Order
– 50
8.5
VCC = 26 Vdc
ICQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 60
– 70
0
10
–30
Pout = 60 W (PEP)
ICQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
8
30
50
40
60
Pout, OUTPUT POWER (WATTS) PEP
20
70
80
7.5
18
Figure 5. Intermodulation Distortion
versus Output Power
IMD
–35
24
26
22
VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)
20
–40
28
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
11
– 20
ICQ = 600 mA
ICQ = 100 mA
– 25
10
G pe , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
5W
50
10
8
10
0
Pin = 7 W
IMD, INTERMODULATION DISTORTION (dBc)
50
Pout , OUTPUT POWER (WATTS)
70
G pe , GAIN (dB)
Pout , OUTPUT POWER (WATTS)
TYPICAL CHARACTERISTICS
– 30
200 mA
– 35
– 40
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
400 mA
– 45
600 mA
– 50
0.1
1.0
10
400 mA
9
8
7
100
6
0.1
200 mA
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
100 mA
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion
versus Output Power
Figure 8. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
100
MRF20060 MRF20060S
5
MTBF LIMITED
6
G pe , GAIN (dB)
5
Tflange = 100°C
4
3
2
TJ = 175°C
1
0
0
4
8
12
16
20
24
VCE, COLLECTOR SUPPLY VOLTAGE (Vdc)
36
9
34
η
8.5
32
VSWR
8
1900
28
Figure 9. Class A DC Safe Operating Area
1920
1940
1960
f, FREQUENCY MHz)
1980
28
2000
1.3:1
1.2:1
1.1:1
Figure 10. Performance in Broadband Circuit
1.E+11
MTBF FACTOR (HOURS x AMPS 2 )
60
Pout , OUTPUT POWER (dBm)
Gpe
9.5
Tflange = 75°C
COLLECTOR EFFICIENCY (%)
7
38
Pout = 60 W (PEP)
VCC = 26 Vdc
ICQ = 200 mA
INPUT VSWR
10
BREAKDOWN LIMITED
IC, COLLECTOR CURRENT (Adc)
8
40
FUNDAMENTAL
20
0
VCC = 24 Vdc
ICQ = 3.5 Adc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
3rd Order
– 20
– 40
0
10
20
30
Pin, INPUT POWER (dBm)
40
Figure 11. Class A Third Order Intercept Point
50
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
250
This above graph displays calculated MTBF in hours x ampere2
emitter curent. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by IC2 for MTBF in a particular application.
Figure 12. MTBF Factor versus
Junction Temperature
MRF20060 MRF20060S
6
MOTOROLA RF DEVICE DATA
+ j1
+ j0.5
+ j2
f = 1.8 GHz
Zin
1.85 GHz
f = 1.8 GHz
+ j0.2
ZOL*
1.85 GHz
+ j3
1.9 GHz
1.95 GHz
2 GHz
2 GHz
+ j5
1.95 GHz
1.9 GHz
+ j10
Zo = 10 Ω
0.2
0.0
0.5
1
2
3
5
– j10
– j5
– j0.2
– j3
– j2
– j0.5
– j1
VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP)
f
MHz
Zin(1)
Ω
ZOL*
Ω
1800
1.0 + j4.8
1.7 + j3.3
1850
1.5 + j4.8
2.2 + j2.7
1900
2.0 + j4.7
2.4 + j3.0
1950
2.5 + j4.7
2.3 + j3.2
2000
3.5 + j4.7
2.0 + j3.4
Zin(1)= Conjugate of fixture base terminal impedance.
ZOL* = Conjugate of the optimum load impedance at
given output power, voltage, bias current and
frequency.
Figure 13. Series Equivalent Input and Output Impedence
MOTOROLA RF DEVICE DATA
MRF20060 MRF20060S
7
Table 1. Common Emitter S–Parameters at VCE = 24 Vdc, IC = 3.5 Adc
f
GHz
GH
S11
S21
S12
S22
|S11|
∠f
|S21|
∠f
|S12|
∠f
|S22|
∠f
1.5
0.986
168
0.32
81
0.031
60
0.923
169
1.55
0.985
167
0.35
76
0.031
63
0.918
169
1.6
0.981
167
0.40
70
0.032
61
0.908
169
1.65
0.973
166
0.45
63
0.030
53
0.897
169
1.7
0.968
165
0.52
56
0.033
50
0.889
168
1.75
0.951
163
0.62
46
0.028
47
0.880
169
1.8
0.914
161
0.76
32
0.027
39
0.871
170
1.85
0.851
161
0.91
12
0.024
26
0.863
171
1.9
0.789
164
1.02
–15
0.015
5
0.888
174
1.95
0.810
170
0.94
–44
0.005
–7
0.931
174
2
0.880
172
0.75
–68
0.006
–151
0.953
172
2.05
0.934
170
0.57
–85
0.010
152
0.967
170
2.1
0.964
168
0.45
–98
0.015
158
0.965
169
2.15
0.977
165
0.36
–109
0.022
164
0.955
168
2.2
0.975
163
0.30
–118
0.033
165
0.950
167
2.25
0.961
161
0.25
–128
0.049
160
0.947
167
2.3
0.942
160
0.22
–139
0.066
149
0.938
166
2.35
0.919
157
0.19
–149
0.077
142
0.931
165
2.4
0.860
156
0.17
–163
0.100
137
0.922
165
2.45
0.821
159
0.15
177
0.128
122
0.914
165
2.5
0.781
161
0.14
157.0
0.156
108
0.907
165
MRF20060 MRF20060S
8
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
–B–
R
DIM
A
B
C
D
E
F
G
H
K
N
Q
R
3
2
Q
K
0.25 (0.010)
N
H
2 PL
D
M
T A
M
B
M
F
E
C
–T–
SEATING
PLANE
INCHES
MIN
MAX
0.995
1.005
0.380
0.390
0.170
0.205
0.455
0.465
0.060
0.075
0.004
0.006
0.800 BSC
0.078
0.090
0.117
0.137
0.595
0.605
0.120
0.130
0.395
0.410
MILLIMETERS
MIN
MAX
25.27
25.53
9.65
9.91
4.32
5.21
11.56
11.81
1.52
1.91
0.10
0.15
20.32 BSC
1.98
2.29
2.97
3.48
15.11
15.37
3.05
3.30
10.03
10.41
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
–A–
CASE 451–04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
–B–
K
2
D
N
H
E
F
C
–A–
–T–
SEATING
PLANE
3
DIM
A
B
C
D
E
F
H
K
N
INCHES
MIN
MAX
0.615
0.625
0.395
0.410
0.170
0.205
0.455
0.465
0.060
0.075
0.004
0.006
0.078
0.090
0.117
0.137
0.595
0.605
MILLIMETERS
MIN
MAX
15.62
15.88
10.03
10.41
4.32
5.21
11.56
11.81
1.52
1.91
0.10
0.15
1.98
2.29
2.97
3.48
15.11
15.37
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 451A–01
ISSUE O
MOTOROLA RF DEVICE DATA
MRF20060 MRF20060S
9
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MRF20060 MRF20060S
10
◊
MRF20060/D
MOTOROLA RF DEVICE
DATA