Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers. 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 9 dB Efficiency — 33% Intermodulation Distortion — –30 dBc • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power • Designed for FM, TDMA, CDMA and Multi–Carrier Applications CASE 451–04, STYLE 1 (MRF20060) CASE 451A–01, STYLE 1 (MRF20060S) MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc Collector–Emitter Voltage VCES 60 Vdc Collector–Base Voltage VCBO 60 Vdc Collector–Emitter Voltage (RBE = 100 Ohm) VCER 30 Vdc VEB –3 Vdc Collector Current – Continuous IC 8 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 0.7 °C/W Collector–Emitter Voltage (IB = 0 mA) Base–Emitter Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF20060 MRF20060S 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 25 26 — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 69 — Vdc Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 60 69 — Vdc Reverse Base–Emitter Breakdown Voltage (IB = 10 mAdc, IC = 0) V(BR)EBO 3 3.5 — Vdc ICES — — 10 mAdc hFE 20 40 80 — Cob — 55 — pF Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gpe 9 9.4 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 33 35 — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — – 33 – 30 dB Input Return Loss (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 12 19 — dB OFF CHARACTERISTICS Zero Base Voltage Collector Leakage Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, IC = 1 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) ψ No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched. MRF20060 MRF20060S 2 MOTOROLA RF DEVICE DATA VBB R1 L5 Q2 L1 D1 B1 L3 VCC C9 C7 + + Q1 C12 C6 C3 C1 R2 R4 C10 C8 C14 C15 R3 L4 L2 Z6 RF INPUT Z1 Z3 Z4 Z7 Z9 C4 Z10 Z5 C11 C2 B1 C1 C2, C4, C13 C3, C14 C5 C6, C12 C7, C9 C8, C10 C11 C15 Z2 C5 Ferrite Bead, P/N 5659065/3B, Ferroxcube 100 µF, 50 V, Electrolytic Capacitor, Mallory 0.6–4.0 pF, Variable Capacitor, Gigatrim, Johanson 0.1 µF, Chip Capacitor, Kemit 15 pF, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 91 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 13 pF, B Case Chip Capacitor, ATC 470 µF, 50 V, Electrolytic Capacitor, Mallory DUT D1 L1, L5 L2, L4 L3 R1 R2 R3, R4 Q1 Q2 Board RF OUTPUT C13 Diode, Motorola (MUR3160T3) 12 Turns, 22 AWG, 0.140″ Choke .5 inch of 20 AWG, ID Choke 12.5 nH Inductor 2 x 130 Ω, 1/8 W Chip Resistor, Rohm 2 x 100 Ω, 1/8 W Chip Resistor, Rohm 10 Ω, 1/2 W, Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 1. Class AB, 1.93 – 2 GHz Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF20060 MRF20060S 3 Vsupply + C3 R1 R5 R2 Q1 VCC R3 VCC Q2 R6 R4 R9 + C6 R7 B1 L3 C8 R8 + C10 C13 C11 C14 R10 L2 L1 C5 N1 RF INPUT C1 Z2 RF OUTPUT C4 C2 Z5 Z1 N2 C12 C7 Z3 Z4 Z6 Z7 DUT C9 B1 C1, C2 C3, C8 C4, C12 C5, C11 C6 C7, C10 C9 C13 C14 L1 L2 L3 Short Bead, Fair Rite 0.6–4.5 pF, Trimmer, Gigatrim, Johanson 100 µF, 50 V Electrolytic, Mallory 12 pF, Chip Capacitor, ATC 91 pF, Chip Capacitor, ATC 0.01 mF, Chip Capacitor, ATC 24 pF, Chip Capacitor, ATC 0.4–2.5 pF, Trimmer, Gigatrim, Johanson 0.1 mF, Chip Capacitor, ATC 470 mF, 63 V Electrolytic, Mallory 2 Turn, 27 AWG, 0.049″ ID Coil 0.041″ dia., 0.7″ Length Wire 11 Turn, 20 AWG, 0.19″ ID Coil N1, N2 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 Board Type N Flange Mount RF 55–22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 270 W, Chip Resistor, 1/8 Watt, Rohm 10 KW, 1/4 Watt, Potentiometer 4.7 KW, Chip Resistor, 1/8 Watt, Rohm 2 x 4.7 KW, Chip Resistor, 1/8 Watt, Rohm 1.0 W, 25 Watt, 1% Resistor, DALE 38 W, Axial Lead, 1 Watt Resistor 4.2 KW, Chip Resistor, 1/8 Watt, Rohm 3 x 39 W, Chip Resistors, 1/8 Watt, Rohm 2 x 10 W, Chip Resistor, 1/8 Watt, Rohm 10 W, Axial Lead, 1 Watt Resistor Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 2. Class A, 1.93 – 2 GHz Test Fixture Electrical Schematic MRF20060 MRF20060S 4 MOTOROLA RF DEVICE DATA 11.5 70 60 11 60 Pout 10.5 10 40 Gpe 9.5 30 9 20 VCC = 26 Vdc ICQ = 200 mA f = 2000 MHz Single Tone 10 8.5 2 0 6 4 Pin, INPUT POWER (WATTS) 8 40 3W 30 20 1850 1900 f, FREQUENCY (MHz) 1950 2000 Figure 4. Output Power versus Frequency – 20 –10 10.5 3rd Order –15 10 – 30 Gpe 5th Order 9.5 –20 9 –25 G pe , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) VCC = 26 Vdc ICQ = 200 mA 0 1800 Figure 3. Output Power & Power Gain versus Input Power – 40 7th Order – 50 8.5 VCC = 26 Vdc ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz – 60 – 70 0 10 –30 Pout = 60 W (PEP) ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 8 30 50 40 60 Pout, OUTPUT POWER (WATTS) PEP 20 70 80 7.5 18 Figure 5. Intermodulation Distortion versus Output Power IMD –35 24 26 22 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) 20 –40 28 Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage 11 – 20 ICQ = 600 mA ICQ = 100 mA – 25 10 G pe , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 5W 50 10 8 10 0 Pin = 7 W IMD, INTERMODULATION DISTORTION (dBc) 50 Pout , OUTPUT POWER (WATTS) 70 G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS – 30 200 mA – 35 – 40 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 400 mA – 45 600 mA – 50 0.1 1.0 10 400 mA 9 8 7 100 6 0.1 200 mA VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 100 MRF20060 MRF20060S 5 MTBF LIMITED 6 G pe , GAIN (dB) 5 Tflange = 100°C 4 3 2 TJ = 175°C 1 0 0 4 8 12 16 20 24 VCE, COLLECTOR SUPPLY VOLTAGE (Vdc) 36 9 34 η 8.5 32 VSWR 8 1900 28 Figure 9. Class A DC Safe Operating Area 1920 1940 1960 f, FREQUENCY MHz) 1980 28 2000 1.3:1 1.2:1 1.1:1 Figure 10. Performance in Broadband Circuit 1.E+11 MTBF FACTOR (HOURS x AMPS 2 ) 60 Pout , OUTPUT POWER (dBm) Gpe 9.5 Tflange = 75°C COLLECTOR EFFICIENCY (%) 7 38 Pout = 60 W (PEP) VCC = 26 Vdc ICQ = 200 mA INPUT VSWR 10 BREAKDOWN LIMITED IC, COLLECTOR CURRENT (Adc) 8 40 FUNDAMENTAL 20 0 VCC = 24 Vdc ICQ = 3.5 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 3rd Order – 20 – 40 0 10 20 30 Pin, INPUT POWER (dBm) 40 Figure 11. Class A Third Order Intercept Point 50 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (°C) 250 This above graph displays calculated MTBF in hours x ampere2 emitter curent. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 12. MTBF Factor versus Junction Temperature MRF20060 MRF20060S 6 MOTOROLA RF DEVICE DATA + j1 + j0.5 + j2 f = 1.8 GHz Zin 1.85 GHz f = 1.8 GHz + j0.2 ZOL* 1.85 GHz + j3 1.9 GHz 1.95 GHz 2 GHz 2 GHz + j5 1.95 GHz 1.9 GHz + j10 Zo = 10 Ω 0.2 0.0 0.5 1 2 3 5 – j10 – j5 – j0.2 – j3 – j2 – j0.5 – j1 VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz Zin(1) Ω ZOL* Ω 1800 1.0 + j4.8 1.7 + j3.3 1850 1.5 + j4.8 2.2 + j2.7 1900 2.0 + j4.7 2.4 + j3.0 1950 2.5 + j4.7 2.3 + j3.2 2000 3.5 + j4.7 2.0 + j3.4 Zin(1)= Conjugate of fixture base terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 13. Series Equivalent Input and Output Impedence MOTOROLA RF DEVICE DATA MRF20060 MRF20060S 7 Table 1. Common Emitter S–Parameters at VCE = 24 Vdc, IC = 3.5 Adc f GHz GH S11 S21 S12 S22 |S11| ∠f |S21| ∠f |S12| ∠f |S22| ∠f 1.5 0.986 168 0.32 81 0.031 60 0.923 169 1.55 0.985 167 0.35 76 0.031 63 0.918 169 1.6 0.981 167 0.40 70 0.032 61 0.908 169 1.65 0.973 166 0.45 63 0.030 53 0.897 169 1.7 0.968 165 0.52 56 0.033 50 0.889 168 1.75 0.951 163 0.62 46 0.028 47 0.880 169 1.8 0.914 161 0.76 32 0.027 39 0.871 170 1.85 0.851 161 0.91 12 0.024 26 0.863 171 1.9 0.789 164 1.02 –15 0.015 5 0.888 174 1.95 0.810 170 0.94 –44 0.005 –7 0.931 174 2 0.880 172 0.75 –68 0.006 –151 0.953 172 2.05 0.934 170 0.57 –85 0.010 152 0.967 170 2.1 0.964 168 0.45 –98 0.015 158 0.965 169 2.15 0.977 165 0.36 –109 0.022 164 0.955 168 2.2 0.975 163 0.30 –118 0.033 165 0.950 167 2.25 0.961 161 0.25 –128 0.049 160 0.947 167 2.3 0.942 160 0.22 –139 0.066 149 0.938 166 2.35 0.919 157 0.19 –149 0.077 142 0.931 165 2.4 0.860 156 0.17 –163 0.100 137 0.922 165 2.45 0.821 159 0.15 177 0.128 122 0.914 165 2.5 0.781 161 0.14 157.0 0.156 108 0.907 165 MRF20060 MRF20060S 8 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 1 –B– R DIM A B C D E F G H K N Q R 3 2 Q K 0.25 (0.010) N H 2 PL D M T A M B M F E C –T– SEATING PLANE INCHES MIN MAX 0.995 1.005 0.380 0.390 0.170 0.205 0.455 0.465 0.060 0.075 0.004 0.006 0.800 BSC 0.078 0.090 0.117 0.137 0.595 0.605 0.120 0.130 0.395 0.410 MILLIMETERS MIN MAX 25.27 25.53 9.65 9.91 4.32 5.21 11.56 11.81 1.52 1.91 0.10 0.15 20.32 BSC 1.98 2.29 2.97 3.48 15.11 15.37 3.05 3.30 10.03 10.41 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER –A– CASE 451–04 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 1 –B– K 2 D N H E F C –A– –T– SEATING PLANE 3 DIM A B C D E F H K N INCHES MIN MAX 0.615 0.625 0.395 0.410 0.170 0.205 0.455 0.465 0.060 0.075 0.004 0.006 0.078 0.090 0.117 0.137 0.595 0.605 MILLIMETERS MIN MAX 15.62 15.88 10.03 10.41 4.32 5.21 11.56 11.81 1.52 1.91 0.10 0.15 1.98 2.29 2.97 3.48 15.11 15.37 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 451A–01 ISSUE O MOTOROLA RF DEVICE DATA MRF20060 MRF20060S 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF20060 MRF20060S 10 ◊ MRF20060/D MOTOROLA RF DEVICE DATA