AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 45A RDS(ON) (at VGS=4.5V) < 4.4mΩ RDS(ON) (at VGS=2.5V) < 5.7mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 160 18 IDSM TA=70°C ±12 35 IDM TA=25°C Units V 45 ID TC=100°C Maximum 20 A 15 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 162 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 0: February 2011 2.5 Steady-State Steady-State RθJA RθJC W 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s W 50 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 PD Typ 16 41 1.2 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD424 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 160 100 nA 1 1.6 V 3.6 4.4 5.1 6.2 VGS=2.5V, ID=20A 4.5 5.7 mΩ 1 V 45 A VGS=4.5V, ID=20A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 105 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 20 VDS=20V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 Ω 28 36 43 VGS=10V, VDS=10V, ID=20A nC 9 nC Qgd Gate Drain Charge 12 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 17 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 29 36 43 VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 8 ns 70 ns 18 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2011 www.aosmd.com Page 2 of 6 AOD424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 4.5V 2.5V VDS=5V 80 2V 60 ID(A) ID (A) 60 40 40 125°C 25°C 20 20 VGS=1.5V 0 0 0 1 2 3 4 5 0.5 8 1.5 2 2.5 Normalized On-Resistance 1.8 6 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 4 VGS=4.5V 2 VGS=4.5V ID=20A 1.6 1.4 17 5 VGS=2.5V ID=20A2 10 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 10 1.0E+02 ID=20A 9 1.0E+01 8 40 1.0E+00 6 125°C 5 4 IS (A) RDS(ON) (mΩ Ω) 7 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 25°C 2 1.0E-04 1.0E-05 1 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: February 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 7000 VDS=10V ID=20A 6000 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 5000 4000 3000 Coss 2000 1 1000 0 0 10 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 10µs 10µs 100.0 RDS(ON) 160 TJ(Max)=175°C TC=25°C 120 17 5 2 10 Power (W) 100µs 10.0 1ms 10ms DC 1.0 0.1 TJ(Max)=175°C TC=25°C 20 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 ID (Amps) Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: February 2011 www.aosmd.com Page 4 of 6 AOD424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C 80 60 40 20 TA=125°C 10 0 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 60 100 50 80 40 Power (W) Current rating ID(A) 1 30 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 175 TA=25°C 17 5 2 10 60 40 20 20 10 0 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 10 Zθ JA Normalized Transient Thermal Resistance 25 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0 1 100 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.0001 175 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: February 2011 www.aosmd.com Page 5 of 6 AOD424 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: February 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6