AOSMD AOD424 20v n-channel mosfet Datasheet

AOD424
20V N-Channel MOSFET
General Description
Product Summary
The AOD424 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
VDS
20V
45A
RDS(ON) (at VGS=4.5V)
< 4.4mΩ
RDS(ON) (at VGS=2.5V)
< 5.7mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
160
18
IDSM
TA=70°C
±12
35
IDM
TA=25°C
Units
V
45
ID
TC=100°C
Maximum
20
A
15
Avalanche Current C
IAS, IAR
57
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
162
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev 0: February 2011
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
W
50
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
100
PD
Typ
16
41
1.2
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°C
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
100
nA
1
1.6
V
3.6
4.4
5.1
6.2
VGS=2.5V, ID=20A
4.5
5.7
mΩ
1
V
45
A
VGS=4.5V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
105
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Coss
Max
20
VDS=20V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
3080
3860
4630
pF
520
740
960
pF
350
580
810
pF
0.6
1.4
2.1
Ω
28
36
43
VGS=10V, VDS=10V, ID=20A
nC
9
nC
Qgd
Gate Drain Charge
12
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
13
17
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
29
36
43
VGS=10V, VDS=10V, RL=0.5Ω,
RGEN=3Ω
8
ns
70
ns
18
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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Page 2 of 6
AOD424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
4.5V
2.5V
VDS=5V
80
2V
60
ID(A)
ID (A)
60
40
40
125°C
25°C
20
20
VGS=1.5V
0
0
0
1
2
3
4
5
0.5
8
1.5
2
2.5
Normalized On-Resistance
1.8
6
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
4
VGS=4.5V
2
VGS=4.5V
ID=20A
1.6
1.4
17
5
VGS=2.5V
ID=20A2
10
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
10
1.0E+02
ID=20A
9
1.0E+01
8
40
1.0E+00
6
125°C
5
4
IS (A)
RDS(ON) (mΩ
Ω)
7
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
25°C
2
1.0E-04
1.0E-05
1
0
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
7000
VDS=10V
ID=20A
6000
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
5000
4000
3000
Coss
2000
1
1000
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
0
10µs 10µs
100.0
RDS(ON)
160
TJ(Max)=175°C
TC=25°C
120
17
5
2
10
Power (W)
100µs
10.0
1ms
10ms
DC
1.0
0.1
TJ(Max)=175°C
TC=25°C
20
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
ID (Amps)
Crss
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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Page 4 of 6
AOD424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
80
60
40
20
TA=125°C
10
0
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
60
100
50
80
40
Power (W)
Current rating ID(A)
1
30
50
75
100
125
150
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
175
TA=25°C
17
5
2
10
60
40
20
20
10
0
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
10
Zθ JA Normalized Transient
Thermal Resistance
25
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0
1
100
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.0001
175
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
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Page 5 of 6
AOD424
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: February 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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