Semiconductor Laser LNCQ03PS Red Light Semiconductor Laser ø5.6 +0 –0.025 ø4.4 ø3.55±0.1 For optical control systems Unit : mm 2 Reference slot Low threshold current PD 110˚±1˚ Features High output operations with oscillatins wavelength of 660nm : 35mw 0.4±0.1 1.0±0.1 LD 3 Junction plane 1 Reference plane 2.3 1.27±0.07 0.25 ø1.0 min. Space saved by miniaturization Low astigmatic difference facilitates good concentrated light spot, production. Reference plane 1.2 Stable single horizontal mode osillation 6.5 3-ø0.45 Applications DVD-Ram 1 Pointer 3 2 ø2.0 1: LD Anode 2: Common Case 3: PD Cathode Bottom view Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Radiant power Reverse voltage Ratings Unit PO 35 mW Laser VR 1.5 V PIN VR (PIN) 30 V Pd (PIN) 60 mW Power dissipation Operating ambient temperature Topr –10 to +60 ˚C Storage temperature Tstg – 40 to +85 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current typ max Unit 20 50 70 mA 50 95 120 mA 2.0 2.5 3.0 V Operating current IOP CW PO = 30mW Operating voltage VOP CW PO = 30mW Resistance between electrodes RS CW PO = 30mW 3.0 5.0 10 Ω Oscillation wavelength λL CW PO = 30mW 635 660 675 nm Slope efficiency SE CW PO = 30mW 0.5 0.7 1.1 W/A θ// CW PO = 30mW 7.5 8.5 10.5 deg. Vertical direction θ⊥ CW PO = 30mW 17 22 X direction θX CW PO = 30mW –2.0 θY CW PO = 4mW –3.0 As*2 CW PO = 4mW Horizontal direction Y direction Astigmatic difference *3 min CW Optical axis accuracy *2 Conditions Ith Radiation angle *1 Symbol 5.0 26.5 deg. +2.0 deg. +3.0 deg. 10 µm θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle ) Reference to package axis. Guaranteed value in design. 1 Semiconductor Laser LNCQ03PS PO — IOP I—V 80 Far field pattern 160 100 Relative radiant power ∆PO 120 I (mA) 60 40 80 Current Radiant power PO (mW) Ta = 25˚C 20 40 75 50 25 Fv Fh 0 0 50 100 150 0 200 0 1 2 4 Ith — Ta 20 40 60 IP (µA) PIN photo current 10 2 10 80 0 Ambient temperature Ta (˚C ) 20 40 60 80 Ambient temperature Ta (˚C ) PO — Ta Id — Ta VR (PIN) = 30V 10 PIN dark current Id (nA) Radiant power PO (mW) 40 30 20 0 – 10 10 30 50 70 Ambient temperature Ta (˚C ) 2 1 10 –1 10 –2 10 40 60 10 –3 – 10 10 30 50 Ambient temperature Ta (˚C ) 0.3 0.2 0.1 0 –20 0 20 40 Ambient temperature Ta (˚C ) 10 2 50 20 0.4 IOP (mA) Operating current Ith (mA) 10 0 IP — Ta 10 3 0 20 Angle θ (deg.) IOP — Ta 10 2 1 40 Voltage V (V) Operating current IOP (mA) Threshold current 3 0 60 70 60