UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. The complementary NPN types are the BD135/BD137/ BD139. 1 TO-251 1 TO-126 ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD136L-x-T60-K BD136G-x-T60-K BD138L-x-T60-K BD138G-x-T60-K BD140L-x-T60-K BD140G-x-T60-K BD136L-x-TM3-T BD136G-x-TM3-T BD138L-x-TM3-T BD138G-x-TM3-T BD140L-x-TM3-T BD140G-x-TM3-T Note: Pin Assignment: E: Emitter C: Collector B: Base www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD Package TO-126 TO-126 TO-126 TO-251 TO-251 TO-251 Pin Assignment 1 2 3 E C B E C B E C B B C E B C E B C E Packing Bulk Bulk Bulk Tube Tube Tube 1 of 3 QW-R204-013.Ca BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT -45 Collector-Base Voltage VCBO -60 V -80 -45 Collector-Emitter Voltage VCEO -60 V -80 Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 V Collector Peak Current ICM -3 A Base Current IB -0.5 A TO-126 12.5 Power Dissipation TC≦25℃ PD W TO-251 15 Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from –20℃~85℃. BD136 BD138 BD140 BD136 BD138 BD140 THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-126 TO-251 TO-126 TO-251 RATINGS 100 83 10 8.3 θJA θJC ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃,unless otherwise specified) PARAMETER Collector-Emitter Sustaining Voltage SYMBOL BD136 BD138 BD140 VCEO(SUS) TEST CONDITIONS IC =-30mA, IB=0 (Note) VCB =-30 V, IE=0 VCB =-30 V, IE=0, TC = 125°C Emitter Cut- off Current IEBO VEB = -5 V, IC=0 hFE1 VCE=-2V, IC =-5mA, DC Current Gain hFE2 VCE=-2V, IC =-0.5A hFE3 VCE=-2V, IC =-150mA Collector-Emitter Saturation Voltage VCE(SAT) IC =-0.5A, IB = -0.05A (Note) Base-Emitter Voltage VBE IC =-0.5A, VCE =-2 V (Note) Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 % Collector Cut-off Current UNIT MIN -45 -60 -80 TYP MAX UNIT V -0.1 -10 -10 ICBO 25 25 40 250 -0.5 -1 μA μA V V CLASSIFICATION OF hFE3 RANK RANGE 6 40~100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 63~160 16 100~250 2 of 3 QW-R204-013.Ca BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-013.Ca