ON EFC4627R-TR N-channel power mosfet Datasheet

Ordering number : ENA2288
EFC4627R
N-Channel Power MOSFET
12V, 6A, 29.5mΩ, Dual EFCP
http://onsemi.com
Features
• 2.5V drive
• Protection diode in
• Common-drain type
• Halogen free compliance
Applications
• Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Value
Unit
Source to Source Voltage
VSSS
12
V
Gate to Source Voltage
VGSS
±10
V
Source Current (DC)
IS
6
A
Source Current (Pulse)
ISP
PW≤10μs, duty cycle≤1%
60
A
Total Dissipation
PT
When mounted on ceramic substrate (5000mm2×0.8mm)
1.4
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
- 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm2×0.8mm)
Symbol
RθJA
Value
Unit
84
°C /W
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Value
Conditions
min
typ
Unit
max
Source to Source Breakdown Voltage
V(BR)SSS
IS=1mA, VGS=0V
Test Circuit 1
Zero-Gate Voltage Source Current
ISSS
VSS=10V, VGS=0V
Test Circuit 1
1
μA
Gate to Source Leakage Current
IGSS
VGS=±8V, VSS=0V
Test Circuit 2
±1
μA
Gate Threshold Voltage
VGS(th)
VSS=6V, IS=1mA
Test Circuit 3
1.3
V
Forward Transconductance
gFS
VSS=6V, IS=2A
Test Circuit 4
RSS(on)1
IS=2A, VGS=4.5V
Test Circuit 5
18.5
23.9
29.5
mΩ
RSS(on)2
IS=2A, VGS=4.0V
Test Circuit 5
19.7
25.4
31.3
mΩ
RSS(on)3
IS=2A, VGS=3.8V
Test Circuit 5
20.3
26.1
32.3
mΩ
RSS(on)4
IS=2A, VGS=3.1V
Test Circuit 5
23.5
30.3
39.0
mΩ
RSS(on)5
IS=2A, VGS=2.5V
Test Circuit 5
29.3
37.7
50.5
mΩ
Static Source to Source On-State
Resistance
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Forward Source to Source Voltage
12
V
0.5
4.8
S
75
ns
740
ns
2340
ns
VSS=6V, VGS=4.5V, IS=2A
Test Circuit 6
2320
ns
Qg
VSS=6V, VGS=4.5V, IS=6A
Test Circuit 7
13.4
nC
VF(S-S)
IS=3A, VGS=0V
Test Circuit 8
0.76
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
Semiconductor Components Industries, LLC, 2014
January, 2014
13114 TKIM TC- 00003097 No.A2288-1/6
EFC4627R
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
ISSS
S2
S2
G2
G2
A
G1
VSS
G1
A
VGS
S1
Test Circuit 3
VGS(th)
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 4
gFS
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VGS
VSS
G1
VSS
G1
VGS
S1
S1
Test Circuit 6
td(on), tr, td(off), tf
Test Circuit 5
RSS(on)
S2
S2
RL
IS
G2
G2
V
V
G1
G1
VGS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VSS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
PG
Test Circuit 8
VF(S-S)
Test Circuit 7
Qg
S2
S2
IS
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G2
G2
V
IG =1mA
G1
RL
G1
S1
S1
PG
VGS=0V
VSS
When FET1 is
measured,+4.5V is added to
VGS of FET2.
When FET2 is measured, the position of FET1 and FET2 is switched.
No.A2288-2/6
EFC4627R
No.A2288-3/6
EFC4627R
No.A2288-4/6
EFC4627R
Package Dimensions
EFC4627R-TR
EFCP1010-4DG-020
Recommended Soldering
Footprint
Unit : mm
1: Source1
2: Gate1
3: Gate2
4: Source2
Ordering & Package Information
Device
Package
EFC4627R-TR
Packing Type: TR
TR
EFCP
Shipping
note
8,000
pcs. / reel
Pb-Free
and
Halogen Free
Marking
C
Electrical Connection
LOT No.
No.A2288-5/6
EFC4627R
Note on usage : Since the EFC4627R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No.A2288-6/6
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