DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS(ON) < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V RDS(ON) < 115mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • • • SOT-23 Drain D Gate G S Source TOP VIEW Maximum Ratings Pin Configuration EQUIVALENT CIRCUIT @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed ID IDM IS Value 30 ±12 3.8 3.1 15 2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range [email protected] Symbol PD RθJA TJ, TSTG www.zpsemi.com Value 1.4 90 -55 to +150 Unit W °C/W °C 1 of 2 DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 800 ±80 ±800 VGS(th) 0.62 0.92 1.4 V RDS (ON) ⎯ ⎯ 39 52 90 54 72 115 mΩ |Yfs| VSD ⎯ ⎯ 3 ⎯ ⎯ 1.16 S V Gate Resistance Rg - 4.17 - Ω Total Gate Charge (10V) Qg - 8.2 - nC Qg Qgs Qgd tD(on) tr tD(off) tf Ciss Coss Crss ⎯ ⎯ ⎯ 3.7 0.7 1.1 1.14 3.49 15.02 3.26 305 74 48 ⎯ ⎯ ⎯ nC nC nC ns ns ns ns pF pF pF Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: nA Test Condition VGS = 0V, ID = 250μA VDS = 28V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±19V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 3.8A VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A VDS =0V, VGS = 0V, f = 1MHz VGS = 10 V, VDS = 10V, ID = 3.8 A VGS =4.5 V, VDS = 10V, ID = 3.8 A VDD = 15V, VGEN = 10V, RGEN = 6Ω, RL = 3.9Ω VDS = 5V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. 3. Short duration pulse test used to minimize self-heating effect. [email protected] www.zpsemi.com 2 of 2