DGNJDZ MMBTA43 Npn silicon high voltage transistor Datasheet

MMBTA42 / MMBTA43
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
As complementary types the PNP transistors
MMBTA92 and MMBTA93 are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Symbol
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Collector Emitter Voltage
Emitter Base Voltage
Value
Unit
300
200
300
200
VCBO
VCEO
V
V
VEBO
6
V
Collector Current
IC
500
mA
Power Dissipation
Ptot
350
mW
Thermal Resistance Junction to Ambient
RθJA
357
Tj, Tstg
- 55 to + 150
Junction and Storage Temperature Range
Characteristics at Ta = 25 C
Parameter
C/W
O
C
O
O
DC Current Gain
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 10 V, IC = 30 mA
Collector Base Cutoff Current
at VCB = 200 V
at VCB = 160 V
Emitter Base Cutoff Current
at VEB = 6 V
at VEB = 4 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 20 mA, IB = 2 mA
Base Emitter Saturation Voltage
at IC = 20 mA, IB = 2 mA
Gain Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance
at VCB = 20 V, f = 1 MHz
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
25
40
40
-
-
MMBTA42
MMBTA43
ICBO
ICBO
-
0.1
0.1
µA
µA
MMBTA42
MMBTA43
IEBO
IEBO
-
0.1
0.1
µA
µA
MMBTA42
MMBTA43
V(BR)CBO
V(BR)CBO
300
200
-
V
V
MMBTA42
MMBTA43
V(BR)CEO
V(BR)CEO
300
200
-
V
V
V(BR)EBO
6
-
V
VCE(sat)
-
0.5
V
VBE(sat)
-
0.9
V
fT
50
-
MHz
Cob
Cob
-
3
4
pF
pF
MMBTA42
MMBTA43
MMBTA42 / MMBTA43
120
hFE, DC Current Gain
VCE =10Vdc
TJ=+125°C
100
80
TJ=25°C
60
40
TJ=-55°C
20
0
0.1
1.0
10
100
100
Ceb @ 1MHz
10
1
Ccb @ 1MHz
0.1
0.1
1
10
100
1000
tT, Current-Gain-Bandwidth (MHz)
C, Capacitance (pF)
IC, Collector Current (mA)
Figure 1. DC Current Gain
VCE=20V
f=20MHz
TJ=20°C
70
60
50
40
30
20
10
1.0
2.0
3.0
5.0 7.0
10
1.4
A VBE(sat) @-55°C, IC/IB=10
B VBE(on) @ -55°C,VCE=10V
1.2
C VBE(sat) @ 125°C,IC/IB=10
1.0
D VBE(sat) @ 25°C,IC/IB=10
0.8
E VBE(on) @ 125°C,VCE=10V
0.6
F VBE(on) @ 25°C,VCE=10V
0.4
G VCE(sat) @ 125°C,IC/IB=10
0.2
H VCE(sat) @ 25°C,IC/IB=10
I VCE(sat) @ -55°C,IC/IB=10
0.0
0.1
1.0
10
IC, Collector Current (mA)
Figure 4."on" Voltages
20
30
50 70 100
Ic, Collector Current (mA)
Figure 3. Current-Gain-Bandwidth
VR, Reverse Voltage (volts)
Figure 2. Capacitance
V, Voltage (volts)
80
100
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