AP2426GEY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 2.5V Gate Drive
D1/D2
▼ Lower on-resistance
G2
S2
G1
S1
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
2928-8
BVDSS
20V
RDS(ON)
26.5mΩ
ID
6A
Description
D1
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good
performance and space saving like TSOP-6.
G1
D2
G2
on-resistance
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+10
V
3
6
A
3
4.8
A
36
A
1.39
W
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201201202
AP2426GEY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=5A
-
23
26.5
mΩ
VGS=2.5V, ID=3A
-
30
38
mΩ
0.3
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=5A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+10V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=5A
-
7.5
12
nC
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
7
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
15
-
ns
tf
Fall Time
VGS=5V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
435
700
pF
Coss
Output Capacitance
VDS=10V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.1A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 210 oC/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2426GEY-HF
20
20
T A =25 o C
5.0V
4.5V
3.5V
2.5V
V G =2.0V
5.0V
4.5V
3.5V
2.5V
V G =2.0V
3
4
16
ID , Drain Current (A)
ID , Drain Current (A)
16
o
T A = 150 C
12
8
4
12
8
4
0
0
0
1
2
3
4
0
1
2
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.8
I D =3A
I D =5A
V G =4.5V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
36
32
28
1.4
1.0
24
0.6
20
1
2
3
4
5
-50
6
0
V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =250uA
1.6
T j =150 o C
Normalized VGS(th) (V)
IS(A)
6
T j =25 o C
4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2426GEY-HF
f=1.0MHz
800
8
600
6
C (pF)
VGS , Gate to Source Voltage (V)
ID=5A
V DS =10V
4
400
2
200
C iss
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
Operation in this
area limited by
RDS(ON)
10
100us
ID (A)
13
V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
0.1
1s
DC
T A =25 o C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=210 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
ID , Drain Current (A)
VG
6
QG
4.5V
QGS
4
QGD
2
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4