NTE NTE5728 Powerblock module Datasheet

NTE5728
Powerblock Module
Description:
The NTE5728 uses high voltage power thyristors/diodes and is electrically isolated from the metal
base, allowing common heatsinks and compact assemblies to be built. This device is intended for
general purpose applications such as battery chargers, welders and plating equipment and where
high voltage and high current are required.
Features:
D High Voltage
D Electrically Isolated Base Plate
D 3000VRMS Isolating Voltage
D High Surge Capability
D Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (TC = +85°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 250A
Maximum RMS On–State Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555A
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse and Off–State Leakage Current (TJ = +130°C), IRRM, IDRM . . . . . . 50mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V
Critical Rate of Rise of Off–State Voltage (TJ = +130°C), dv/dt
(Linear to 80% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/µs
(Linear to 67% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +130°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Junction, DC Operation), RthJC . . . . . . . . . 0.125°C/W
Thermal Resistance, Case–to–Sink (Per Module, Note 1), RthCS . . . . . . . . . . . . . . . . . . . . 0.02°C/W
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Symbol
IFSM
Test Conditions
Rating
Unit
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +130°C
°
7150
A
7500
A
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +130°C
°
8500
A
8900
A
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +130°C
°
255
A2s
233
A2s
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +130°C
°
361
A2s
330
A2s
t = 0.1 to 10ms, no voltage reapplied
3610
A2pt
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum
I2t
for Fusing
I2t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I2pt
I2pt
Threshold Voltage, Low level
VT(TO)1
TJ = +130°C, (16.7% x π x IT(AV) < I < π x IT(AV))
0.97
V
Threshold Voltage, High level
VT(TO)2
TJ = +130°C, (π x IT(AV) < I < 20 x π x IT(AV))
1.00
V
On–State Slope Resistance, Low Level
rt1
TJ = +130°C, (16.7% x π x IT(AV) < I < π x IT(AV))
0.60
mΩ
On–State Slope Resistance, High Level
rt2
TJ = +130°C, (π x IT(AV) < I < 20 x π x IT(AV))
0.57
mΩ
TJ = +130°C, ITM = π x IT(AV), 180° Condition,
Av. Power = VT(TO) x IT(AV) + rt x (IT(RMS))2
1.44
V
Maximum On–State Voltage Drop
VTM
Maximum Holding Current
IH
Anode Supply = 12V, Initial IT = 30A, TJ = +25°C
500
mA
Maximum Latching Current
IL
Anode Supply = 12V, Resistive Load = 1Ω,
Gat Pulse: 10V, 100µs, TJ = +25°C
1000
mA
Maximum Peak Gate Power
PGM
TJ = +130°C, tp ≤ 5ms
10
W
PG(AV)
TJ = +130°C, f = 50Hz
2.0
W
Maximum Peak Gate Current
+IGM
TJ = +130°C, tp ≤ 5ms
3.0
A
Maximum Peak Negative Gate Voltage
–VGT
TJ = +130°C, tp ≤ 5ms
5.0
V
Maximum Required DC Gate Trigger
Voltage to Trigger
VGT
TJ = –40°C
4.0
V
3.0
V
2.0
V
350
mA
200
mA
TJ = +130°C
100
mA
Maximum Average Gate Power
TJ = +25°C
Anode Supply = 12V,
Resistive Load: RA = 1Ω
Ω
TJ = +130°C
Maximum Required DC Gate Trigger
Current to Trigger
IGT
TJ = –40°C
TJ = +25°C
Anode Supply = 12V,
Resistive Load: RA = 1Ω
Ω
Maximum Gate Voltage that will not
Trigger
VGD
TJ = +130°C, Rated VDRM Applied
0.25
V
Maximum Gate Current that will not
Trigger
IGD
TJ = +130°C, Rated VDRM Applied
10
mA
Maximum Rate of Rise of
Turned–On Current
di/dt
TJ = +130°C, ITM = 400A, Rated VDRM Applied
500
A/µs
Typical Delay Time
td
1.0
µs
Typical Rise Time
tr
TJ = +25°C, Gate Current = 1A diG/dt = 1A/µs,
VD = 0.67% VDRM
2.0
µs
Typical Turn–Off Time
tq
TJ = +25°C, ITM = 300A, –dI/dt = 15A/µs, VR = 50V, 50–150
dV/dt = 20V/µs, Gate 0V, 100Ω
µs
Circuit Diagram
G2
K2
+
AC
–
K1
G1
K2
G2
K1
G1
+
AC
–
.980 (25.0)
.980 (25.0)
.244 (6.2) Dia
(2 Places)
.270 (7.0)
1.340
(34.0)
3.150 (80.0)
M6 x 1 Screw (3 Places)
1.850
(47.0)
1.180
(30.0)
3.700 (94.0)
NOTE: Can be used with Heat Sink NTE441A