AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB GAIN .400 x .400 2LFL (S036) hermetically sealed BRANDING 80912-30 ORDER CODE AM80912-030 DESCRIPTION PIN CONNECTION The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM80912-030 is supplied in the hermetic metal/ceramic package with internal input matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter Value Unit 75 W Collector Current* 3.5 A Collector-Supply Voltage* 40 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 2.2 °C/W PDISS Power Dissipation* IC VCC TJ T STG (TC ≤ 85° C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance *Applies only to rated RF amplifier operation. August 1992 1/6 AM80912-030 ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC Value Symbol Test Conditions Min . Typ. Max. Unit BV CBO IC = 10mA 55 — — V BV EBO IE = 1mA 3.5 — — V BV CER IC = 20mA 55 — — V ICES VCE = 35V — — 5.0 mA hFE VCE = 5V 15 — 150 — RBE = 10Ω IC = 1.0A DYNAMIC Value Symbol Min . Typ. Max. Unit POUT f = 960 — 1215MHz PIN = 5.0W VCC = +35V 30 36 — W ηC f = 960 — 1215MHz PIN = 5.0W VCC = +35V 40 45 — % GP f = 960 — 1215MHz 6.4 µs on 6. 6 µ s PIN = 5.0W VCC = +35V 7.8 8.6 — dB Note: 2/6 Test Conditions Pul se format: Duty Cycle: off, repeat f or 3.3 ms, then off for 4.5125 ms. Burst 49.2%, overall 20.8% AM80912-030 TYPICAL PERFORMANCE TYPICAL BROADBAND POWER AMPLIFIER TYPICAL RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY* vs COLLECTOR VOLTAGE MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE Θjc (°C/W) DC = 20% DC = 4% PIN = 5 W VCC = 35 V TC = 40°C PULSE WIDTH (µsec) 3/6 AM80912-030 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 5W VCC = +35V ZO* = 50Ω FREQ. ZIN (Ω) ZCL (Ω) L = 960 MHz 4.5 + j 6.0 11.0 − j 0.5 M = 1090 MHz 5.5 + j 6.3 12.0 − j 2.0 H = 1215 MHz 5.0 + j 5.0 12.5 − j 5.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 5W VCC = +35V ZO* = 50Ω *Normalized Impedance 4/6 AM80912-030 TEST CIRCUIT PACKAGE MECHANICAL DATA 5/6 AM80912-030 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6