STMicroelectronics HCC4585BF 4-bit magnitude comparator Datasheet

HCC/HCF4585B
4-BIT MAGNITUDE COMPARATOR
.
.
.
..
..
EXPANSION TO 8, 12, 16 ... 4 N BITS BY CASCADING UNITS
MEDIUM-SPEED OPERATION : COMPARES
TWO 4-BIT WORDS IN 180ns (typ.) AT 10V
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD N° 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
M1
(Micro Package)
F
(Ceramic Frit Seal Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4585BF
HCF4585BM1
HCF4585BEY
HCF4585BC1
PIN CONNECTIONS
DESCRIPTION
The HCC4585B (extended temperature range) and
HCF4585B (intermediate temperature range) are
monolithic integrated circuits, available in 16-lead
dual in-line plastic or ceramic package, and plastic
micro package. The HCC/HCF4585B is a 4-bit magnitude comparator designed for use in computer and
logic applications that require the comparison of two
4-bit words. This logic circuit determines whether
one 4-bit word (Binary or BCD) is ”less than”, ”equal
to”, or ”greater than” a second 4-bit word. The
HCC/HCF4585B has eight comparing inputs (A3,
B3, through A0, B0), three outputs (A < B, A = B, A >
B) and three cascading inputs (A < B, A = B, A > B)
that permit systems designers to expand the comparator function to 8, 12, 16 ... 4 N bits. When a
single HCC/HCF4585B is used, the cascading inputs are connected as follows : (A < B) = low,
(A = B) = high, (A > B) = high. Cascading these units
for comparison of more than 4 bits is accomplished
as shown in typical application.
June 1989
1/12
HCC/HCF4585B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DD*
Parameter
Supply Voltage : HC C Types
H C F Types
Value
Unit
– 0.5 to + 20
– 0.5 to + 18
V
V
Vi
Input Voltage
– 0.5 to V DD + 0.5
V
II
DC Input Current (any one input)
± 10
mA
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T o p = Full Package-temperature Range
200
mW
100
mW
Pt ot
Top
Operating Temperature : HCC Types
H CF Types
– 55 to + 125
– 40 to + 85
°C
°C
Tstg
Storage Temperature
– 65 to + 150
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltages are with respect to VSS (GND).
RECOMMENDED OPERATING CONDITIONS
Symbol
V DD
VI
Top
2/12
Parameter
Supply Voltage : H CC Types
H C F Types
Input Voltage
Operating Temperature : HCC Types
H CF Types
Value
Unit
3 to 18
3 to 15
V
V
0 to V DD
V
– 55 to + 125
– 40 to + 85
°C
°C
HCC/HCF4585B
LOGIC DIAGRAM
TRUTH TABLE
Inputs
Comparing
A 3, B3
A3
A3
A3
A3
A2,
B2 A1,
Outputs
Cascading
B1 A0,
B0
A< B
A=B
A >B
A<B
A =B
A>B
> B3
= B3
= B3
= B3
X
A2 > B2
A2 = B2
A2 = B2
X
X
A1 > B1
A1 = B1
X
X
X
A0 > B0
X
X
X
X
X
X
X
X
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
A3 = B3
A3 = B3
A3 = B3
A2 = B2
A2 = B2
A2 = B2
A1 = B1
A1 = B1
A1 = B1
A0 = B0
A0 = B0
A0 = B0
0
0
1
0
1
0
1
X
X
0
0
1
0
1
0
1
0
0
A3
A3
A3
A3
A2 = B2
A2 = B2
A2 < B2
X
A1 = B1
A1 < B1
X
X
A0 < B0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
1
1
1
0
0
0
0
0
0
0
0
= B3
= B3
= B3
< B3
X = Don’t Care
Logic 1 = High Level
3/12
HCC/HCF4585B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Symbol
IL
V OH
V OL
Parameter
Quiescent
Current
VI
(V)
VO
(V)
V IL
I OH
0/ 5
5
5
0.04
5
150
HCC
Types 0/15
10
10
0.04
10
300
15
20
0.04
20
600
0/20
20
100
0.08
100
3000
0/ 5
HCF
0/10
Types
0/15
5
20
0.04
20
150
10
40
0.04
40
300
15
80
0.04
80
600
Output High
Voltage
Output Low
Voltage
0/ 5
<1
5
4.95
4.95
4.95
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
5/0
<1
5
0.05
0.05
0.05
10/0
<1
10
0.05
0.05
0.05
I OL
I IH , I IL
CI
Input High
Voltage
Input Low
Voltage
Output
Drive
Current
Output
Sink
Current
Input
Leakage
Current
|I O | V D D
T L o w*
25 °C
T Hi g h *
(µA) (V) Min. Max. Min. Typ. Max. Min. Max.
0/10
15/0
V IH
Value
<1
15
0.5/4.5
<1
5
1/9
0.05
3.5
0.05
3.5
<1
10
7
7
7
1.5/13.5 < 1
15
11
11
11
4.5/0.5
<1
5
1.5
1.5
1.5
9/1
<1
10
3
3
3
13.5/1.5 < 1
15
4
4
4
2.5
5
– 2
– 1.6 – 3.2
– 1.15
HCC
Types 0/10
4.6
5
– 0.64
– 0.51 – 1
– 0.36
9.5
10
– 1.6
– 1.3 – 2.6
– 0.9
0/15
13.5
15
– 4.2
– 3.4 – 6.8
– 2.4
0/ 5
2.5
5
– 1.53
– 1.36 – 3.2
– 1.1
0/ 5
HCF
Types 0/10
4.6
5
– 0.52
– 0.44 – 1
– 0.36
9.5
10
– 1.3
– 1.1 – 2.6
– 0.9
0/15
13.5
15
– 3.6
– 3.0 – 6.8
– 2.4
0/ 5
0.4
5
0.64
0.51
1
0.36
0.5
10
1.6
1.3
2.6
0.9
1.5
15
4.2
3.4
6.8
2.4
0/ 5
0.4
5
0.52
0.44
1
0.36
HCF
0/10
Types
0/15
0.5
10
1.3
1.1
2.6
0.9
1.5
15
3.6
3.0
6.8
2.4
Any Input
V
V
V
mA
mA
18
± 0.1
±10 – 5 ± 0.1
± 1
15
± 0.3
±10 – 5 ± 0.3
± 1
µA
Any Input
HCF
0/15
Types
Input Capacitance
V
0.05
0/ 5
HCC
0/18
Types
µA
3.5
0/ 5
HCC
0/10
Types
0/15
Unit
5
7.5
pF
* TLo w = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
4/12
HCC/HCF4585B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, C L = 50pF, R L = 200kΩ,
typical temperature coefficient for all V DD values is 0.3%/°C, all input rise and fall time = 20ns)
Symbol
t PHL ,
tP LH
Parameter
Propagation Delay Time
Comparing Inputs to Outputs
Cascading Input to Outputs
t T HL ,
tTLH
Transition Time
Test Conditions
Value
V D D (V) Min.
Typ.
Max.
5
300
600
10
125
250
15
80
160
5
200
400
10
80
160
15
60
120
5
100
200
10
50
100
15
40
80
Unit
ns
ns
ns
Output Low (sink) Current Characteristics.
Output High (source) Current Characteristics.
Typical Transition Time vs. Load Capacitance.
Typical Propagation Delay Time (comparing inputs to outputs) vs. Load Capacitance.
5/12
HCC/HCF4585B
Typical Dynamic Power Dissipation vs. Clock
Input Frequency.
TYPICAL APPLICATION
TYPICAL SPEED CHARACTERISTICS OF A 12-BIT COMPARATOR
6/12
HCC/HCF4585B
TEST CIRCUITS
Quiescent Device Current.
Input Voltage.
Input Leakage Current.
Dynamic Power Dissipation.
7/12
HCC/HCF4585B
Plastic DIP16 (0.25) MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
0.77
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
8/12
HCC/HCF4585B
Ceramic DIP16/1 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
20
0.787
B
7
0.276
D
E
3.3
0.130
0.38
e3
0.015
17.78
0.700
F
2.29
2.79
0.090
0.110
G
0.4
0.55
0.016
0.022
H
1.17
1.52
0.046
0.060
L
0.22
0.31
0.009
0.012
M
0.51
1.27
0.020
0.050
N
P
Q
10.3
7.8
8.05
5.08
0.406
0.307
0.317
0.200
P053D
9/12
HCC/HCF4585B
SO16 (Narrow) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.004
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
9.8
E
5.8
10
0.385
6.2
0.228
0.393
0.244
e
1.27
0.050
e3
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.62
0.024
8° (max.)
P013H
10/12
HCC/HCF4585B
PLCC20 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
9.78
10.03
0.385
0.395
B
8.89
9.04
0.350
0.356
D
4.2
4.57
0.165
0.180
d1
2.54
0.100
d2
0.56
0.022
E
7.37
8.38
0.290
0.330
e
1.27
0.050
e3
5.08
0.200
F
0.38
0.015
G
0.101
0.004
M
1.27
0.050
M1
1.14
0.045
P027A
11/12
HCC/HCF4585B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
12/12