Mitsubishi CM300DU-12F Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
CM300DU-12F
¡IC ................................................................... 300A
¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point
108
93 ±0.25
14
14
E2 G2
14
C1
E2
25
25
6
62
G1 E1
RTC
CIRCUIT DIAGRAM
15.85
(18)
C2E1
C1
E2
C2E1
48 ±0.25
15
6
E2 G2
CM
G1 E1
(8.25)
RTC
21.5
2.5
3-M6 NUTS
4-φ6. 5 MOUNTING HOLES
4
18
0.5
2.8
29 +1.0
–0.5
LABEL
0.5
0.5
0.5
4
7
8.5
18
22
7
7.5
18
Feb. 2009
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
600
±20
300
600
300
600
780
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Parameter
Symbol
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 30mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
—
1.6
1.6
—
—
—
1860
—
—
—
—
—
5.2
—
—
—
0.04
—
—
40
2.2
—
81
5.4
3.0
—
250
120
500
250
150
—
2.6
0.16
0.24
—
0.10*3
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal
resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
Tj = 25°C
Tj = 125°C
IC = 300A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 300A, VGE = 15V
VCC = 300V, IC = 300A
VGE = ±15V
RG = 2.1Ω, Inductive load
IE = 300A
IE = 300A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied*2 (1/2 module)
Case temperature measured point is just under the chips
21
mA
V
nF
nC
ns
ns
µC
V
K/W
Ω
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
15
11
10
Tj=25°C
VGE=20V
500
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
600
9.5
400
9
300
8.5
200
8
100
7.5
0
2
1.5
1
1
1.5
2
2.5
3
3.5
Tj = 25°C
Tj = 125°C
0.5
4
0
200
400
600
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
5
Tj = 25°C
EMITTER CURRENT IE (A)
7
4
3
IC = 600A
2
IC = 300A
1
0
IC = 120A
6
8
10
12
14
16
18
2
102
7
5
3
2
0
0.5
1
1.5
2
2.5
3
3.5
4
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Cies
7
5
3
2
101
7
5
3
2
Coes
100
Cres
7
5
3
2
3
101
20
Tj = 25°C
5
GATE-EMITTER VOLTAGE VGE (V)
102
CAPACITANCE Cies, Coes, Cres (nF)
VGE = 15V
2.5
0
0.5
SWITCHING TIMES (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
0
3
VGE = 0V
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
7
5
3
2
td(off)
td(on)
tf
102
7
5
3
2
101
7
5
3
2
tr
Conditions:
VCC = 300V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
100 0
10 2 3 5 7101 2 3 5 7102 2 3 5 7103
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
103
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
2
trr
102
Irr
7
5
Conditions:
VCC = 300V
VGE = ±15V
RG = 2.1Ω
Tj = 25°C
3
2
101 1
10
2
3
5 7 102
2
3
5 7 103
EMITTER CURRENT IE (A)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.16K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.24K/W
100
7
5
3
2
3
2
10–1
10–1
10–2
10–2
7
5
3
2
7
5
3
2
10–3
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 300A
18
16
VCC = 200V
14
VCC = 300V
12
10
8
6
4
2
0
0
500
1000
1500
2000
2500
GATE CHARGE QG (nC)
Feb. 2009
4
Similar pages