MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE CM300DU-12F ¡IC ................................................................... 300A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 108 93 ±0.25 14 14 E2 G2 14 C1 E2 25 25 6 62 G1 E1 RTC CIRCUIT DIAGRAM 15.85 (18) C2E1 C1 E2 C2E1 48 ±0.25 15 6 E2 G2 CM G1 E1 (8.25) RTC 21.5 2.5 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 4 18 0.5 2.8 29 +1.0 –0.5 LABEL 0.5 0.5 0.5 4 7 8.5 18 22 7 7.5 18 Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 600 ±20 300 600 300 600 780 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 30mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 2.1 — 1.6 1.6 — — — 1860 — — — — — 5.2 — — — 0.04 — — 40 2.2 — 81 5.4 3.0 — 250 120 500 250 150 — 2.6 0.16 0.24 — 0.10*3 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Tj = 25°C Tj = 125°C IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE = ±15V RG = 2.1Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips 21 mA V nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 15 11 10 Tj=25°C VGE=20V 500 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) 600 9.5 400 9 300 8.5 200 8 100 7.5 0 2 1.5 1 1 1.5 2 2.5 3 3.5 Tj = 25°C Tj = 125°C 0.5 4 0 200 400 600 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 5 Tj = 25°C EMITTER CURRENT IE (A) 7 4 3 IC = 600A 2 IC = 300A 1 0 IC = 120A 6 8 10 12 14 16 18 2 102 7 5 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies 7 5 3 2 101 7 5 3 2 Coes 100 Cres 7 5 3 2 3 101 20 Tj = 25°C 5 GATE-EMITTER VOLTAGE VGE (V) 102 CAPACITANCE Cies, Coes, Cres (nF) VGE = 15V 2.5 0 0.5 SWITCHING TIMES (ns) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0 3 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 7 5 3 2 td(off) td(on) tf 102 7 5 3 2 101 7 5 3 2 tr Conditions: VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 125°C 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 103 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3 2 trr 102 Irr 7 5 Conditions: VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 25°C 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.16K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.24K/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 300A 18 16 VCC = 200V 14 VCC = 300V 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 GATE CHARGE QG (nC) Feb. 2009 4