BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · · · · · G C S D E Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: S70, K70 Weight: 0.008 grams (approx.) B G H M K J L Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol BS870 Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V VGSS ±20 V Gate-Source Voltage Continuous Drain Current (Note 1) Continuous Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic ID 250 mA Pd 310 mW RqJA 400 K/W Tj, TSTG -55 to +150 °C @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 80 ¾ V VGS = 0V, ID = 100mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 0.5 µA VDS = 25V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±15V, VDS = 0V OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) VGS(th) 1.0 2.0 3.0 V VDS = VGS, ID =-250mA RDS (ON) ¾ 3.5 5.0 W VGS = 10V, ID = 0.2A ID(ON) ¾ 1.0 0.5 A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 50 pF Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ 2.0 20 ns Turn-Off Delay Time tD(OFF) ¾ 5.0 20 ns Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VES = 10V, RL = 150W, VDS = 10V, RD = 100W Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. DS11302 Rev. G-2 1 of 2 BS870 0.8 ID, DRAIN-SOURCE CURRENT (A) 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.6 Tj = 25°C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.0 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 0.8 1.0 6 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 0.4 0.2 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature DS11302 Rev. G-2 5 4 ID = 500mA ID = 50mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 2 of 2 BS870