Diodes BS870 N-channel enhancement mode field effect transistor Datasheet

BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
SOT-23
A
D
TOP VIEW
Mechanical Data
·
·
·
·
·
G
C
S
D
E
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: S70, K70
Weight: 0.008 grams (approx.)
B
G
H
M
K
J
L
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
BS870
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS £ 1.0MW
VDGR
60
V
VGSS
±20
V
Gate-Source Voltage
Continuous
Drain Current (Note 1)
Continuous
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
ID
250
mA
Pd
310
mW
RqJA
400
K/W
Tj, TSTG
-55 to +150
°C
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60
80
¾
V
VGS = 0V, ID = 100mA
Zero Gate Voltage Drain Current
IDSS
¾
¾
0.5
µA
VDS = 25V, VGS = 0V
Gate-Body Leakage
IGSS
¾
¾
±10
nA
VGS = ±15V, VDS = 0V
OFF CHARACTERISTICS (Note 2)
ON CHARACTERISTICS (Note 2)
VGS(th)
1.0
2.0
3.0
V
VDS = VGS, ID =-250mA
RDS (ON)
¾
3.5
5.0
W
VGS = 10V, ID = 0.2A
ID(ON)
¾
1.0
0.5
A
VGS = 10V, VDS = 7.5V
gFS
80
¾
¾
mS
Input Capacitance
Ciss
¾
22
50
pF
Output Capacitance
Coss
¾
11
25
pF
Reverse Transfer Capacitance
Crss
¾
2.0
5.0
pF
Turn-On Delay Time
tD(ON)
¾
2.0
20
ns
Turn-Off Delay Time
tD(OFF)
¾
5.0
20
ns
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
VDS = 10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
VES = 10V, RL = 150W,
VDS = 10V, RD = 100W
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS11302 Rev. G-2
1 of 2
BS870
0.8
ID, DRAIN-SOURCE CURRENT (A)
7
VGS = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
0.6
Tj = 25°C
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.0
5.5V
5.0V
0.4
0.2
6
5
VGS = 5.0V
4
3
VGS = 10V
2
1
0
0
0
1
3
2
0
5
4
0.8
1.0
6
1.5
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.6
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
VGS = 10V, ID = 0.5A
VGS = 5.0V, ID = 0.05A
1.0
0.5
0
0.4
0.2
-55
-30
-5
20
45
70
95
120
145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
DS11302 Rev. G-2
5
4
ID = 500mA
ID = 50mA
3
2
1
0
0
2
4
6
8
10
12
14
16
18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
2 of 2
BS870
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