Bulletin I27099 rev. C 03/01 IRK.F200.. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 200 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved Description These series of MAGN-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IRK.F200.. Units 200 A 85 °C 444 A @ 50Hz 7600 A @ 60Hz 8000 A @ 50Hz 290 KA 2s @ 60Hz 265 KA 2s 2900 KA 2√s tq 20 and 25 µs t rr 2 µs IT(AV) @ TC IT(RMS) ITSM 2 I t I2√t VDRM / VRRM up to 1200 V TJ - 40 to 125 o range www.irf.com C 1 IRK.F200.. Series Bulletin I27099 rev. C 03/01 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number IRK.F200- Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/I DRM max. Code peak reverse voltage repetitive peak rev. voltage @ T J = 125°C V V mA 08 800 800 12 1200 1200 50 Current Carrying Capacity ITM ITM Frequency f o 180 el ITM Units 100µs 180 el o 50Hz 380 560 630 850 2460 3180 A 400Hz 460 690 710 1060 1570 2080 A 2500Hz 310 450 530 760 630 860 A 5000Hz 250 360 410 560 410 560 A 10000Hz 180 280 300 410 - - A 50 50 50 50 50 Recovery voltage Vr 50 Voltage before turn-on Vd 80%VDRM 80%VDRM V 80%VDRM V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 85 60 85 60 85 60 °C Equivalent values for RC circuit 10Ω/0.47µF 10Ω/0.47µF 10Ω/0.47µF On-state Conduction Parameter IT(AV) IRK.F200.. Units Conditions Maximum average on-state current 200 A @ Case temperature 85 °C 180° conduction, half sine wave IT(RMS) Maximum RMS current 444 A as AC switch ITSM Maximum peak, one-cycle, 7600 A t = 10ms No voltage non-repetitive surge current 8000 t = 8.3ms reapplied 6400 t = 10ms 100% VRRM 6700 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = 125°C 265 t = 8.3ms reapplied 205 t = 10ms 100% VRRM 187 t = 8.3ms reapplied I2t I2 √t Maximum I2 t for fusing Maximum I2 √t for fusing 290 2900 KA2 s KA2√s t = 0 to 10ms, no voltage reapplied 1.18 VT(TO)2 High level value of threshold voltage 1.25 r t1 Low level value of on-state slope resistance 0.74 r t2 High level value of on-state slope resistance 0.70 VTM Maximum on-state voltage drop 1.73 V IH Maximum holding current 600 mA TJ = 25°C, IT > 30 A IL Typical latching current 1000 mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A 2 V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. VT(TO)1 Low level value of threshold voltage (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse www.irf.com IRK.F200.. Series Bulletin I27099 rev. C 03/01 Switching Parameter di/dt IRK.F200.. Maximum non-repetitive rate of rise 800 Units Conditions A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C trr Maximum recovery time tq Maximum turn-off time 2 µs K J 20 25 ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 750A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM Blocking Parameter dv/dt IRK.F200.. Maximum critical rate of rise of off-state 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s 50 mA voltage VINS RMS isolation voltage IRRM Maximum peak reverse and off-state IDRM leakage current TJ = 125°C, rated VDRM/VRRM applied Triggering Parameter IRK.F200.. Units Conditions P GM Maximum peak gate power 60 W f = 50 Hz, d% = 50 P G(AV) Maximum peak average gate power 10 W TJ = 125°C, f = 50Hz, d% = 50 IGM Maximum peak positive gate current 10 A TJ = 125°C, tp < 5ms - VGM Maximum peak negative gate voltage 5 V IGT Max. DC gate current required to trigger 200 mA V GT DC gate voltage required to trigger 3 V IGD DC gate current not to trigger 20 mA V GD DC gate voltage not to trigger 0.25 V TJ = 25°C, Vak 12V, Ra = 6 TJ = 125°C, rated VDRM applied Thermal and Mechanical Specifications Parameter IRK.F200.. TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 R thJC Max. thermal resistance, junction to Units Conditions °C 0.125 K/W Per junction, DC operation 0.025 K/W Mounting surface flat and greased case R thC-hs Max. thermal resistance, case to heatsink Per module T Mounting torque ± 10% MAP to heatsink wt Approximate weight busbar to MAP www.irf.com 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound Nm 3 IRK.F200.. Series Bulletin I27099 rev. C 03/01 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.009 Units Conditions K/W T J = 125°C 0.006 120° 0.010 0.011 90° 0.014 0.015 60° 0.020 0.020 30° 0.032 0.033 Ordering Information Table Device Code IRK T F 200 1 2 3 4 - 12 H K 5 6 7 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 6 - dv/dt code: H ≤ 400V/µs 7 - tq code: K ≤ 20µs J ≤ 25µs NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F200.. Series Bulletin I27099 rev. C 03/01 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 M ax im um Allo w ab le C a se Tem p erature ( C ) 130 IRKLF.. IRKUF.. IR K.F200.. Series R thJC (D C ) = 0.12 5 K/W 120 110 C o nd uc tio n A ng le 100 90 30 60 80 90 70 120 180 60 0 40 80 120 160 200 240 A vera ge O n-sta te C urrent (A ) Fig. 1 - Current Ratings Characteristics www.irf.com IRKVF.. M a xim um A llo w ab le C ase Te m pe rature ( C ) IRKHF.. IRKTF.. IRKKF.. 130 IRKNF.. IR K .F2 00.. Serie s R thJC (D C ) = 0.12 5 K/W 120 110 C o nd uctio n P erio d 100 90 30 80 60 90 70 12 0 180 DC 60 0 50 100 150 200 250 300 350 A verag e On -state C urren t (A) Fig. 2 - Current Ratings Characteristics 5 IRK.F200.. Series 180 120 90 60 30 300 250 200 RM S Lim it 150 C o n d u ction A n g le 100 IRK.F20 0.. Series Per Ju nction T J = 1 25 C 50 0 0 40 80 120 160 200 M axim um Av e ra ge On -state P ow er Lo ss (W ) 350 500 DC 180 120 90 60 30 450 400 350 300 250 200 RM S Lim it C o nd uctio n P erio d 150 IR K.F2 00.. Series Per Ju nction T J = 1 25 C 100 50 0 0 50 200 250 300 350 Avera ge O n-sta te C urre nt (A) Fig. 4 - On-state Power Loss Characteristics 7000 At Any Ra ted Loa d C ond ition And W ith Ra ted VRR M Ap plied Follow ing Surge. In itia l T J = 125 C @ 60 Hz 0.008 3 s @ 50 Hz 0.010 0 s 6000 5000 4000 IRK.F20 0.. Series Pe r Jun ctio n 3000 10 100 8000 M a xim um N on Rep etitiv e Surge C urrent V ersus Pulse Tra in D ura tio n. Co ntro l O f C o nduction May Not Be Maintained. In itial TJ = 125 C No V o lta ge Re a p p lie d Ra te d V RR M R e a pp lie d 7000 6000 5000 4000 IRK.F200.. Series Pe r Jun ctio n 3000 0.01 Nu m b er O f E qu a l Am plitu d e Half C yc le C u rre nt Pu lse s (N) 1000 T J= 25 C T J = 12 5 C IR K.F200 .. Series P er Jun c tio n 100 1 2 3 4 5 6 7 1 Fig. 6 - Maximum Non-Repetitive Surge Current Tran sient The rm al Im pedance Z thJC (K/W ) 10000 0.1 Pu ls e Train D uration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Instantan e ous O n -state C urre nt (A) 150 Fig. 3 - On-state Power Loss Characteristics 1 6 100 A vera ge O n -sta te C urre n t (A) Peak H alf Sine W ave O n -sta te Curren t (A) Pea k H alf Sine W a ve O n-sta te C ur ren t (A) M a xim um Ave rag e O n-st at e P ow er Lo ss (W ) Bulletin I27099 rev. C 03/01 1 Steady State Valu e: R thJC = 0.1 25 K/W (D C O pera tio n) 0.1 0.01 IR K.F200.. Series Per Jun ctio n 0.001 0.001 0.01 0.1 1 10 100 In sta n ta n e o us O n -sta te V o lta g e (V ) Square W a ve Pulse D uration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics www.irf.com IRK.F200.. Series 320 M axim um Re verse Re c overy C urre n t - Irr (A ) M a xim u m Re verse Rec ove ry C ha rg e - Q rr ( C ) Bulletin I27099 rev. C 03/01 I TM = 1000 A 500 A 300 A 200 A 100 A 300 280 260 240 220 200 180 160 140 120 IRK .F200.. Serie s T J = 125 C 100 80 10 20 30 40 50 60 70 80 90 100 180 I TM = 1 000A 5 00A 3 00A 2 00A 1 00A 150 120 90 60 IRK.F200.. Se ries T J = 125 C 30 10 20 30 40 50 60 70 80 90 100 Ra te O f Fall O f Fo rw ard C urre nt - d i/dt (A / s) Rate O f Fa ll O f Forw ard C urren t - d i/dt (A / s) Fig. 9 - Reverse Recovery Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Peak O n-stata C urrent (A) 1E4 50 H z 1 50 50 H z 40 0 150 1 00 0 1E3 40 0 2 50 0 1 00 0 5 00 0 2 50 0 5000 1E2 tp Snub b er c ircuit R s = 10 o hm s C s = 0.47 F V D = 80% V D R M IRK.F200.. Series Sinuso id a l p ulse T C = 85 C 1E1 1E1 1E2 1E3 tp Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F200.. Series Sinuso id a l p ulse T C = 60 C 1E4 E1 1E4 1E1 1E2 Pulse Base w idth ( s) 1E3 1E4 Pu lse Base w id th ( s) Fig. 11 - Frequency Characteristics Pea k O n -state C urren t (A ) 1E4 tp IRK.F200.. Series Tra p ezo id a l p ulse T C= 85 C d i/d t 5 0A/ s tp IRK .F2 00.. Se rie s Tra p ezoid a l p ulse T C= 85 C d i/d t 100A/ s 50 H z 50 H z 150 150 40 0 1E3 400 1 00 0 1 00 0 2 50 0 2 50 0 5 00 0 Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M 1E2 1E1 1E2 1E3 5000 1E4 E1 1E4 1E1 Pulse Base w idth ( s) Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M 1E2 1E3 1E4 Pu lse Base w idth ( s) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F200.. Series Bulletin I27099 rev. C 03/01 Pea k O n -state C urren t (A ) 1E4 50 H z 50 H z 150 150 40 0 400 1E3 1 00 0 1000 2 50 0 2 50 0 5 00 0 tp 5000 Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK.F 200.. Series Tra p ezoid a l p ulse T C= 60 C d i/d t 50A/ s 1E2 1E1 1E2 tp 1E1 1E4 E1 1E4 1E3 Snub b e r c irc uit R s = 10 ohm s C s = 0.4 7 F V D = 80% V D R M IRK .F200.. Series Tra pezo id a l p ulse T C= 60 C di/d t 100A/ s 1E2 Pulse Base w idth ( s) 1E3 1E4 Pulse Base w idth ( s) Fig. 13 - Frequency Characteristics 1E4 10 jou les per p u lse 10 jou les p er p ulse 5 2 .5 2 .5 1 0 .5 1E3 1 0 .2 5 0 .5 0 .2 5 0 .1 0 .1 0 .0 5 0 .05 1E2 tp IRK .F200.. Se ries S inusoid a l p ulse 1E1 1E1 1E2 tp IRK .F200.. Series Tra p ezoid a l p ulse d i/d t 50A / s 1E1 1E4 1E4 E1 1E3 1E2 1E3 1E4 Pulse Base w idth ( s) Pulse Base w id th ( s) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 10 R ectan g u la r g a te pu lse a ) Reco m m en d ed lo a d lin e fo r ra ted d i/d t : 1 0V , 10 o h m s b ) R eco m m end ed lo a d lin e fo r < = 30% ra ted d i/d t : 1 0V , 20 o h m s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s (a ) Tj=25 C 1 T j=- 40 C (b ) Tj=125 C Instantane ous G ate V oltage (V) Pea k O n -state C urre n t (A ) 5 (1) (2) (3 ) (4) VG D IG D 0.1 0.01 IRK.F200.. Series 0.1 Frequenc y Lim ite d by PG (AV ) 1 10 100 In sta n ta n eo u s G ate C u rrent (A ) Fig. 15 - Gate Characteristics 8 www.irf.com