Transistors SMD Type NPN Transistors BC846~BC848 (KC846~KC848) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● For switching and AF amplifier applications +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Ideally suited for automatic insertion 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol BC846 BC847 BC848 Collector - Base Voltage VCBO 80 50 30 Collector - Emitter Voltage VCEO 65 45 30 Emitter - Base Voltage VEBO 6 6 6 Unit V Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BC846~BC848 (KC846~KC848) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector- base breakdown voltage Min BC846 VCBO Ic= 100 μA， IE= 0 30 BC846 65 VCEO BC847 VEBO BC846 Ic= 1 mA， IB= 0 V 45 6 IE= 100μA， IC= 0 VCB= 70 V , IE= 0 ICBO BC847 BC848 VCB= 50 V , IE= 0 100 nA 1 uA nA VCB= 30 V , IE= 0 VCE= 60 V , IE= 0 BC846 ICEO BC847 VCE= 45 V , IE= 0 VCE= 30 V , IE= 0 BC848 VEB= 5V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=5mA 0.4 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=5mA 1.1 Emitter cut-off current DC current gain Unit 30 Emitter - base breakdown voltage Collector- emitter cut-off current Max 50 BC848 BC848 Collector-base cut-off current Typ 80 BC847 Collector- emitter breakdown voltage Test Conditions IEBO BC846A,847A,848A hFE BC846B,847B,848B VCE= 5V, IC= 2mA BC847C,848C Collector output capacitance Cob Transition frequency fT 110 220 200 450 420 800 VCB= 10V,f= 1 MHz V 4.5 VCE= 5V, IC= 10mA,f=100MHz pF 100 MHz ■ Classification of hfe 2 Type BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C Range 110-220 220-450 110-220 220-450 420-800 110-220 220-450 420-800 Marking 1A 1B 1E 1F 1G 1J 1K 1L www.kexin.com.cn Transistors SMD Type NPN Transistors BC846~BC848 (KC846~KC848) ■ Typical Characterisitics Static Characteristic 10 (mA) 8 1000 DC CURRENT GAIN IC 16uA 6 14uA 12uA 4 —— IC COMMON EMITTER VCE= 5V Ta=100℃ hFE 20uA 18uA COLLECTOR CURRENT hFE 3000 COMMON EMITTER Ta=25℃ 10uA 8uA Ta=25℃ 100 6uA 2 4uA 0 IB=2uA 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC 500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 800 Ta=25℃ 600 Ta=100 ℃ 400 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=25℃ 1 10 COLLECTOR CURREMT fT 500 —— IC 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V IC Ta=100 ℃ (mA) VBE 100 (mA) 100 10 0.1 100 —— IC β=20 β=20 200 0.1 10 COLLECTOR CURRENT VCE (V) 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 BASE-EMMITER VOLTAGE VBE (V) 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Ta=25 ℃ Cib Cob 1 0.1 0.1 REVERSE VOLTAGE 10 V (V) PC 30 —— 8 IC (mA) 10 12 125 150 Ta 200 150 100 50 0 1 6 COLLECTOR CURRENT 250 f=1MHz IE=0/IC=0 10 4 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) www.kexin.com.cn 3