SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R (RoHS Device) Io = 200 mA V R = 30 Volts 0503(1308) Features 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package. Majority carrier conduction. Mechanical data 0.030(0.75) Case: 0503(1308) standard package, molded plastic. 0.024(0.60) 0.016(0.40) Typ. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BB Mounting position: Any 0.022(0.55) Typ. Weight: 0.002 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Repetitive peak reverse voltage V RRM 35 V Reverse voltage VR 30 V Average forward current IO 200 mA I FSM 1 A Forward current,surge peak 8.3ms single half sine-wave superimposed on rate load(JEDEC method) Storage temperature T STG Junction temperature Tj -40 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 200 mA VF 0.6 V Reverse current V R = 10 V IR 1 uA REV:A Page 1 QW-A1100 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBER0230R) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 O Reverse current ( A ) 100 C 5 O C 10 1u O 25 C 100n C O C 75 C O 25 O 10u O -25 C 10n -25 75 1 O 12 Forward current (mA ) 125 C 100u 0.1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 0 10 Fig. 3 - Capacitance between terminals characteristics 25 30 Fig.4 - Current derating curve 100 f = 1 MHz Ta = 25 C Average forward current(%) 10 100 80 60 40 20 0 1 0 5 10 15 20 25 30 0 Fig. 6 - IR Dispersion map 560 AVG:568mV 550 540 100 125 150 O 800 700 600 500 400 300 Fig. 7 - CT Dispersion map O Ta=25 C VR=10V n=30pcs 900 Reverse current (nA) 570 75 50 1000 O Ta=25 C IF=200mA n=30pcs 580 50 Ambient temperature ( C) Fig. 5 - VF Dispersion map 590 25 O Reverse voltage (V) AVG:111nA 200 Ta=25 C F=1MHz VR=0V n=10pcs 45 Capacitance between terminals(pF) Capacitance between terminals ( P F) 20 Reverse voltage (V) Forward voltage (V) Forward voltage (mV) 15 40 35 30 25 20 15 AVG:18.8pF 10 100 5 0 0 REV:A Page 2 QW-A1100 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed ER/0503 ER/0503 SYMBOL A B C d D D1 D2 (mm) 0.90 ± 0.10 1.46 ± 0.10 0.80 ± 0.10 1.55 ± 0.05 178 ± 1 60.0 MIN. 13.0 ± 0.20 (inch) 0.035 ± 0.004 0.057 ± 0.004 0.031 ± 0.004 0.061 ± 0.002 7.008 ± 0.04 2.362 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.22 ± 0.05 8.00 ± 0.20 13.5 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.008 ± 0.002 0.315 ± 0.008 0.531 MAX. REV:A Page 3 QW-A1100 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Marking Code Park Number Marking Code CDBER0230R BB BB Suggested PAD Layout ER/0503 SIZE A (mm) (inch) 0.85 0.033 D A B 0.55 0.022 C 0.85 0.033 E C D 1.40 0.055 E 0.30 0.118 B Standard Package Qty per Reel Reel Size (Pcs) (inch) 4000 7 Case Type ER/0503 REV:A Page 4 QW-A1100 Comchip Technology CO., LTD.