PD - 97448
IRLML2060TRPbF
HEXFET® Power MOSFET
VDS
60
V
VGS Max
± 16
V
RDS(on) max
480
mΩ
640
mΩ
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
* '
6 Micro3TM (SOT-23)
IRLML2060TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Features
Benefits
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1
Multi-vendor compatibility
results in Easier manufacturing
⇒
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
VDS
Parameter
Max.
Units
60
V
ID @ TA = 25°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
1.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
0.93
IDM
Pulsed Drain Current
4.8
PD @TA = 25°C
Maximum Power Dissipation
1.25
PD @TA = 70°C
Maximum Power Dissipation
0.80
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 16
W/°C
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
A
W
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
1
02/08/10
IRLML2060TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units
60
–––
–––
–––
0.06
–––
–––
356
480
–––
475
640
1.0
–––
2.5
–––
–––
20
–––
–––
150
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 5.0mA
mΩ
V
µA
VGS = 10V, ID = 1.2A
VDS = VGS, ID = 25µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
7.5
–––
Ω
gfs
Qg
Forward Transconductance
1.6
–––
–––
S
Total Gate Charge
–––
0.67
–––
Qgs
Gate-to-Source Charge
–––
0.18
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
0.40
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
4.9
–––
VDD = 30V
tr
Rise Time
–––
3.8
–––
td(off)
Turn-Off Delay Time
–––
3.7
–––
tf
Fall Time
–––
2.8
–––
Ciss
Input Capacitance
–––
64
–––
Coss
Output Capacitance
–––
13
–––
Crss
Reverse Transfer Capacitance
–––
6.6
–––
nA
d
d
VGS = 4.5V, ID = 0.96A
VGS = 16V
VGS = -16V
VDS = 25V, ID = 1.2A
ID = 1.2A
nC
ns
VDS = 30V
ID = 1.2A
d
d
RG = 6.8Ω
VGS = 4.5V
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
–––
14
21
ns
Qrr
Reverse Recovery Charge
–––
8.3
12
nC
2
c
–––
–––
1.2
A
–––
–––
4.8
–––
–––
1.2
Conditions
MOSFET symbol
V
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.2A, VGS = 0V
TJ = 25°C, VR = 30V, IF=1.3A
di/dt = 100A/µs
d
d
www.irf.com
IRLML2060TRPbF
10
10
1
BOTTOM
0.1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
8.0V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
3.0V
≤60µs PULSE WIDTH
1
BOTTOM
3.0V
0.1
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.01
0.01
0.1
1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
8.0V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
T J = 150°C
1
T J = 25°C
VDS = 25V
≤60µs PULSE WIDTH
0.1
ID = 1.2A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRLML2060TRPbF
1000
14.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 1.2A
C, Capacitance (pF)
Coss = Cds + Cgd
100
Ciss
Coss
Crss
10
12.0
VDS= 48V
VDS= 30V
10.0
VDS= 12V
8.0
6.0
4.0
2.0
1
0.0
1
10
100
0.0
VDS, Drain-to-Source Voltage (V)
1.5
2.0
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
10
100
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1.0
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1msec 100µsec
1
10msec
0.1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.01
0.5
0.6
0.7
0.8
0.9
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
0.5
1.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLML2060TRPbF
1.2
RD
VDS
ID, Drain Current (A)
1.0
VGS
D.U.T.
RG
0.8
+
-VDD
VGS
0.6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.4
Fig 10a. Switching Time Test Circuit
0.2
VDS
90%
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRLML2060TRPbF
2000
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
1000
ID = 1.2A
800
1500
T J = 125°C
600
Vgs = 10V
1000
T J = 25°C
400
200
4
5
6
7
8
9
10
Vgs = 4.5V
500
0
0
1
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs.
Gate Voltage
2
3
4
5
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs.
Drain Current
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
50KΩ
12V
.2µF
.3µF
QGD
VG
D.U.T.
+
V
- DS
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
www.irf.com
IRLML2060TRPbF
100
2.6
80
ID = 250µA
2.4
2.2
Power (W)
VGS(th) , Gate threshold Voltage (V)
2.8
2.0
ID = 25µA
1.8
1.6
60
40
20
1.4
1.2
0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage vs.
Junction Temperature
www.irf.com
1
10
100
1000
10000
100000
Time (sec)
Fig 16. Typical Power vs. Time
7
IRLML2060TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
0.15 [0.006] M C B A
2
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
3X L
7
1.900
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
0.0004
0
%6&
%6&
REF
BSC
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
'$7(&2'(
3$57180%(5
: ,)35(&('('%</$67',*,72)&$/(1'$5<($5
/($')5((
&X:,5(
/27&2'(
+$/2*(1)5((
; 3$57180%(5&2'(5()(5(1&(
$
%
&
'
(
)
*
+
,
-
.
/
0
1
3
5
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
,5/0/
1RWH$OLQHDERYHWKHZRUNZHHN
DVVKRZQKHUH LQGLFDWHV/HDG)UHH
<($5
<
:25.
:((.
:
$
%
&
'
;
<
=
: ,)35(&('('%<$/(77(5
<($5
<
$
%
&
'
(
)
*
+
.
:25.
:((.
:
$
%
&
'
;
<
=
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
IRLML2060TRPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
IRLML2060TRPbF
Orderable part number
Package Type
IRLML2060TRPbF
Micro3
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Qualification information†
Cons umer
Qualification level
(per JE DE C JE S D47F
Moisture Sensitivity Level
Micro3
†††
guidelines )
MS L1
†††
(per IPC/JE DE C J-S T D-020D
Yes
RoHS compliant
††
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board.
Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2010
10
www.irf.com