BCD APT13005TF-E1 High voltage fast switching npn power transistor Datasheet

Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
General Description
Features
The APT13005 series are high voltage, high speed,
high efficiency switching transistor, and it is specially
designed for off-line switch mode power supplies with
low output power.
·
·
·
·
The APT13005 series is available in TO-220-3, TO220-3(2), and TO-220F-3 packages.
Applications
·
·
TO-220F-3
APT13005
High Switching Speed
High Collector-Emitter Voltage: 700V
Low Cost
High Efficency
Battery Chargers for Mobile Phone
Power Supply for DVD/STB
TO-220-3
TO-220-3(2)
Figure 1. Package Types of APT13005
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Pin Configuration
T Package
(TO-220-3)
(TO-220-3(2))
3
Emitter
3
Emitter
2
Collector
2
Collector
1
Base
1
Base
TF Package
(TO-220F-3)
3
Emitter
2
Collector
1
Base
Figure 2. Pin Configuration of APT13005(front view)
Collector
Base
Emitter
Figure 3. Internal Structure of APT13005
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Ordering Information
APT13005
-
Circuit Type
E1: Lead Free
G1: Green
Package
T: TO-220-3/TO-220-3(2)
TF: TO-220F-3
Part Number
Package
TO-220-3/
TO-220-3(2)
TO-220F-3
Blank: Tube
Marking ID
Green
Lead Free
Green
Lead Free
Packing Type
APT13005T-E1
APT13005T-G1
APT13005T-E1
APT13005T-G1
Tube
APT13005TF-E1
APT13005TF-G1
APT13005TF-E1
APT13005TF-G1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
D packages.
"G1" suffix are available in green
Absolute Maximum Ratings (Note 1)
ParameterDD
DD
Symbol
Value
Unit
Collector-Emitter Voltage (VBE=0)
VCES
700
V
Collector-Emitter Voltage (IB=0)
VCEO
450
V
Emitter-Base Breakdown Voltage (IC=0)
VEBO
9
V
IC
4
A
ICM
8
A
IB
2
A
IBM
4
A
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Power Dissipation, TC=25oC
TO-220-3/
TO-220-3 (2)
PTOT
TO-220F-3
75
W
28
Operating Junction Temperature
150
Storage Temperature Range
-65 to 150
o
C
oC
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Thermal Characteristics
Parameter
Symbol
Maximum Thermal Resistance
Condition
θJC
Junction to Case
Value
TO-220-3/
TO-220-3(2)
1.67
TO-220F-3
4.5
Unit
o
C/W
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current
(VBE=-1.5V)
Collector-Emitter Sustaining
Voltage (IB=0) (Note 2)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Symbol
ICEV
VCE=700V
VCEO (sus)
IC=100µA
VCE(sat)
VBE(sat)
DC Current Gain (Note 2)
hFE
Turn -on Time with Resistive Load
ton
Storage Time with Resistive Load
ts
Fall Time with Resistive Load
tf
Output Capacitance
Current Gain Bandwidth Product
Conditions
COB
fT
Min
Typ
Max
Unit
10
µA
450
V
IC=1.0A, IB=0.2A
0.3
IC=2.0A, IB=0.5A
0.6
IC=4.0A, IB=1.0A
0.9
IC=1.0A, IB=0.2A
1.1
IC=2.0A, IB=0.5A
1.3
V
IC=1.0A, VCE=5.0V
15
35
IC=2.0A, VCE=5.0V
8
35
IC=2A, VCC=125V
IBI=0.4A, IB2=-0.4V
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
V
45
4
0.8
µs
4.5
µs
0.9
µs
pF
MHz
Note 2: Pulse test for Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Typical Performance Characteristics
10
DC
1
Collector Current IC(A)
Collector Current IC(A)
10
0.1
DC
1
0.1
o
o
TC=25 C
TC=25 C
0.01
1
10
100
D
Collector-Emitter clamp Voltage V
0.01
1
1000
10
100
1000
Collector-Emitter clamp Voltage VCE(V)
(V)
CE
Figure
DD 4. Safe Operating Areas
DD(TO-220-3/TO-220-3(2)
Package)
Figure 5. Safe Operating Areas (TO-220F-3 Package)
4.5
125
IB=500mA
4.0
IB=450mA
IB=400mA
IB=350mA
Α
Α
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75
50
25
3.0
Α
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IB=200mA
Α
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2.5
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IB=250mA
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Α
Α
Α
Collector Current IC(A)
Power Derating Factor(%)
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
IB=300mA
Α
Α
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Α
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Α
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Α
Α
Α
Α
Α
Α
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Α
3.5
Α
Α
Α
Α
Α
Α
Α
100
Α
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Α
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Α
Α
Α
Α
2.0
IB=150mA
Α
Α
Α
Α
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Α
Α
1.5
Α
Α
IB=100mA
Α
Α
Α
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ΑΑ
Α
Α
Α
Α
Α
Α
ΑΑ
Α
1.0
Α
Α
Α
Α
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Α
IB=50mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
ΑΑ
Α
Α
0.5
Α
Α
ΑΑ
Α
Α
ΑΑ
Α
Α
Α
ΑΑΑ
ΑΑ
Α
Α
ΑΑ
0
0
25
50
75
100
125
150
175
0.0
0
200
1
2
3
4
5
6
7
8
Collector-Emitter Voltage VCE(V)
o
Case Temperature( C)
Figure 6. Power Derating Curve
Figure 7. Static Characterstics
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Typical Performance Characteristics (Continued)
40
1
o
35
TJ=125 C
HFE=4
Collector-Emitter Voltage VCE(V)
VCE=5V
DC Current Gain
30
25
o
TJ=25 C
20
15
10
5
0
0.01
0.1
1
o
TJ=125 C
o
TJ=25 C
0.1
0.01
0.1
10
1
10
Collector Current IC(A)
Collector Current IC(A)
Figure 9. Collector-Emitter Saturation Region
Figure 8. DC Current Gain
1.2
HFE=4
Base-Emitter Voltage VBE(V)
1.1
1.0
o
TJ=25 C
0.9
0.8
o
TJ=125 C
0.7
0.6
0.5
0.1
1
10
Collector Current IC(A)
Figure 10. Base-Emitter Saturation Voltage
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Mechanical Dimensions
TO-220-3
2.580(0.102)
3.380(0.133)
0.550(0.022)
1.350(0.053)
D
DD D
1.160(0.046)
1.760(0.069)
14.230(0.560)
16.510(0.650)
φ1.500(0.059)
27.880(1.098)
30.280(1.192)
D
8.520(0.335)
9.520(0.375)
1.850(0.073)
9.660(0.380)
10.660(0.420)
φ3.560(0.140)
4.060(0.160)
Unit: mm(inch)
3°
0.200(0.008)
7°
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
7°
0.381(0.015)
60°
0.813(0.032)
8.763(0.345)
60°
0.381(0.015)
2.540(0.100)
2.540(0.100)
Aug. 2010 Rev 1. 1
0.356(0.014)
0.406(0.016)
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Mechanical Dimensions (Continued)
TO-220-3 (2)
Unit: mm(inch)
9.800(0.386)
10.200(0.402)
∅ 3.560(0.140)
3.640(0.143)
0.600(0.024)
1.300(0.051)
1.300(0.051)
11.100(0.437)
6.300(0.248)
6.700(0.264)
1.700(0.067)
9.000(0.354)
9.400(0.370)
3°
4.500(0.177)
2.400(0.094)
3°
3°
0.700(0.028)
0.900(0.035)
2.540(0.100)
12.600(0.496)
13.600(0.535)
9.600(0.378)
10.600(0.417)
1.270(0.050)
0.400(0.016)
0.600(0.024)
2.540(0.100)
Aug. 2010 Rev 1. 1
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13005
Mechanical Dimensions (Continued)
TO-220F-3
9.700(0.382)
10.300(0.406)
3.000(0.119)
3.400(0.134)
6.900(0.272)
7.100(0.280)
∅
ٛ 3.000(0.119)
3.550(0.140)
Unit: mm(inch)
2.350(0.093)
2.900(0.114)
3.370(0.133)
3.900(0.154)
D
14.700(0.579)
16.000(0.630)
2.790(0.110)
4.500(0.177)
D
DD D
4.300(0.169)
4.900(0.075)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
2.540(0.100)
2.540(0.100)
Aug. 2010 Rev 1. 1
0.450(0.018)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
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