DSK EM01Z Plastic silicon rectifier Datasheet

Diode Semiconductor Korea
EM01Z(Z) - - - EM01A(Z)
VOLTAGE RANGE: 200 --- 600 V
CURRENT: 1.0 A
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
DO - 41
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EM01Z
EM01
EM01A
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
1.0
A
IFSM
45.0
A
VF
0.97
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
IR
5.0
Typical junction capacitance
(Note1)
CJ
15
Typical thermal resistance
(Note2)
RθJA
50
TJ
-55----+150
TSTG
-55----+150
Operating junction temperature range
Storage temperature range
A
50.0
pF
/W
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
EM01Z(Z)- - - EM01A(Z)
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
40
FORWARD CURRENT, AMPERES
AVERAGE FORWARD CURRENT, AMPERES
FIG.1 -- FORWARD DERATING CURVE
1.0
0.8
0.6
0.4
0.2
0
25
0
50
75
100
125
150
10
TJ=150
TJ=100
TJ=60
TJ=25
1
0.1
0.01
0.001
0.3
0.5
AMBIENT TEMPERATURE,
pF
30
25
20
15
10
5
10
NUMBER OF CYCLES AT 60Hz
100
JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT, AMPERES
TJ=125
8.3ms Single Half
Sine-Wave
1
1.7 1.9
2.1
FIG.4--TYPICAL JUNCTION CAPACITANCE
45
35
1.1 1.3 1.5
FORWARD VOLTAGE,VOLTS
FIG.3 -- FORWARD SURGE CURRENT
40
0.7 0.9
100
60
40
20
10
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
10 0
REVERSE VOLTAGE VOLTS
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