Diode Semiconductor Korea EM01Z(Z) - - - EM01A(Z) VOLTAGE RANGE: 200 --- 600 V CURRENT: 1.0 A PLASTIC SILICON RECTIFIERS FEATURES Low cost Diffused junction DO - 41 Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EM01Z EM01 EM01A UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 V Maximum RMS voltage VRMS 140 280 420 V Maximum DC blocking voltage VDC 200 400 600 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 1.0 A IFSM 45.0 A VF 0.97 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 IR 5.0 Typical junction capacitance (Note1) CJ 15 Typical thermal resistance (Note2) RθJA 50 TJ -55----+150 TSTG -55----+150 Operating junction temperature range Storage temperature range A 50.0 pF ／Ｗ NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea EM01Z(Z)- - - EM01A(Z) FIG.2 -- TYPICAL FORWARD CHARACTERISTICS 40 FORWARD CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES FIG.1 -- FORWARD DERATING CURVE 1.0 0.8 0.6 0.4 0.2 0 25 0 50 75 100 125 150 10 TJ=150 TJ=100 TJ=60 TJ=25 1 0.1 0.01 0.001 0.3 0.5 AMBIENT TEMPERATURE, pF 30 25 20 15 10 5 10 NUMBER OF CYCLES AT 60Hz 100 JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, AMPERES TJ=125 8.3ms Single Half Sine-Wave 1 1.7 1.9 2.1 FIG.4--TYPICAL JUNCTION CAPACITANCE 45 35 1.1 1.3 1.5 FORWARD VOLTAGE,VOLTS FIG.3 -- FORWARD SURGE CURRENT 40 0.7 0.9 100 60 40 20 10 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 10 0 REVERSE VOLTAGE VOLTS www.diode.kr