Yea Shin GBJ608 6.0a glass passivated bridge rectifier Datasheet

DATA SHEET
GBJ6005 THRU GBJ610
SEMICONDUCTOR
6.0A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
GBJ
•Glass Passivated Die Construction
•High Case Dielectric Strength of 1500VRMS
•Low Reverse Leakage Current
•Surge Overload Rating to 170A Peak
A
K
Dim
Min
Max
L
A
29.70
30.30
M
B
19.70
20.30
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
•Ideal for Printed Circuit Board Applications
•Plastic Material - UL Flammability
_
Classification 94V-0
•UL Listed Under Recognized Component
Index, File Number E94661
O
•High temperature soldering : 260 C / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
J
B
S
N
P
D
H
C
R
I
K
environment substance directive request
3.0 X 45°
4.80
L
4.40
M
3.40
3.80
N
3.10
3.40
•Case: Molded Plastic
P
2.50
2.90
•Terminals: Plated Leads, Solderable per
R
0.60
0.80
S
10.80
11.20
G
MECHANICAL DATA
E
E
MIL-STD-202, Method 208
•Polarity: Molded on Body
All Dimensions in mm
•Mounting: Through Hole for #6 Screw
•Mounting Torque: 5.0 in-lbs Maximum
•Weight: 6.6 grams (approx)
•Marking: Type Number
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Rectified Output Current @ TC= 110℃
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
6005
601
602
604
606
608
610
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
Unit
IO
6.0
A
IFSM
150
A
1.0
V
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
@ IF = 3.0A
Peak Reverse Current
@TC = 25℃
at Rated DC Blocking Voltage
@ TC = 125℃
VFM
IR
5.0
500
μA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
120
Typical Junction Capacitance per Element (Note 2)
Cj
55
pF
R_JC
1.8
℃/W
Tj, TSTG
-55 to +150
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
A2s
℃
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
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REV.02 20120305
DEVICE CHARACTERISTICS
FORWARD SURGE CURRENT, AMPERES pk
(HALF SINE-WAVE)
AVERAGE FORWARD CURRENT
AMPERES
GBJ6005 THRU GBJ610
6.0
HEAT-SINK
MOUNTING, T C
(4 x 4 x 0.15cm)THK
COPPER PLATE
4.0
2.0
MOUNTED ON PC BOARD,
TA 0.5 (12.7mm)LEAD LENGTH
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
50
100
150
O
175
140
105
70
35
0
1
CASE TEMPERATURE, C
INSTANTANEOUS FORWARD CURRENT, AMPERES
4
REVERSE CURRENT,uA
10 3
O
10
10
T J =150 C
1
10 0
O
T J =25 C
10
10
-1
-2
0
10
20
30
40
50
60
70
80
90
100 110
40
60
100
100
40
20
10
4.0
2.0
1.0
O
TJ=25 C
Pulse Width = 300us
1% DULY Cycle
0.4
0.2
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF PEAK REVERE VOLTAGE,%
Fig.4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER ELEMENT
Fig.3 - TYPICAL REVERSE CHARACTERISTICS
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20
Fig.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
RECTIFIED CURRENT
2
10
NO. OF CYCLES AT 60Hz
Fig.1 - DERATING CURVE FOR OUTPUT
10
6
2
2
REV.02 20120305
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