DATA SHEET GBJ6005 THRU GBJ610 SEMICONDUCTOR 6.0A GLASS PASSIVATED BRIDGE RECTIFIER FEATURES GBJ •Glass Passivated Die Construction •High Case Dielectric Strength of 1500VRMS •Low Reverse Leakage Current •Surge Overload Rating to 170A Peak A K Dim Min Max L A 29.70 30.30 M B 19.70 20.30 C 17.00 18.00 D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 •Ideal for Printed Circuit Board Applications •Plastic Material - UL Flammability _ Classification 94V-0 •UL Listed Under Recognized Component Index, File Number E94661 O •High temperature soldering : 260 C / 10 seconds at terminals •Pb free product at available : 99% Sn above meet RoHS J B S N P D H C R I K environment substance directive request 3.0 X 45° 4.80 L 4.40 M 3.40 3.80 N 3.10 3.40 •Case: Molded Plastic P 2.50 2.90 •Terminals: Plated Leads, Solderable per R 0.60 0.80 S 10.80 11.20 G MECHANICAL DATA E E MIL-STD-202, Method 208 •Polarity: Molded on Body All Dimensions in mm •Mounting: Through Hole for #6 Screw •Mounting Torque: 5.0 in-lbs Maximum •Weight: 6.6 grams (approx) •Marking: Type Number Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Average Forward Rectified Output Current @ TC= 110℃ GBJ GBJ GBJ GBJ GBJ GBJ GBJ 6005 601 602 604 606 608 610 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Unit IO 6.0 A IFSM 150 A 1.0 V Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF = 3.0A Peak Reverse Current @TC = 25℃ at Rated DC Blocking Voltage @ TC = 125℃ VFM IR 5.0 500 μA I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 120 Typical Junction Capacitance per Element (Note 2) Cj 55 pF R_JC 1.8 ℃/W Tj, TSTG -55 to +150 Typical Thermal Resistance, Junction to Case (Note 3) Operating and Storage Temperature Range A2s ℃ Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink. http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS FORWARD SURGE CURRENT, AMPERES pk (HALF SINE-WAVE) AVERAGE FORWARD CURRENT AMPERES GBJ6005 THRU GBJ610 6.0 HEAT-SINK MOUNTING, T C (4 x 4 x 0.15cm)THK COPPER PLATE 4.0 2.0 MOUNTED ON PC BOARD, TA 0.5 (12.7mm)LEAD LENGTH 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 50 100 150 O 175 140 105 70 35 0 1 CASE TEMPERATURE, C INSTANTANEOUS FORWARD CURRENT, AMPERES 4 REVERSE CURRENT,uA 10 3 O 10 10 T J =150 C 1 10 0 O T J =25 C 10 10 -1 -2 0 10 20 30 40 50 60 70 80 90 100 110 40 60 100 100 40 20 10 4.0 2.0 1.0 O TJ=25 C Pulse Width = 300us 1% DULY Cycle 0.4 0.2 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF PEAK REVERE VOLTAGE,% Fig.4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER ELEMENT Fig.3 - TYPICAL REVERSE CHARACTERISTICS http://www.yeashin.com 20 Fig.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT RECTIFIED CURRENT 2 10 NO. OF CYCLES AT 60Hz Fig.1 - DERATING CURVE FOR OUTPUT 10 6 2 2 REV.02 20120305