MOSFET SMD Type P-Channel MOSFET AO4455-HF (KO4455-HF) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-17 A (VGS =-20V) ● RDS(ON) ＜ 6.2mΩ (VGS =-20V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 7.2mΩ (VGS =-10V) ● ESD Rating: 2000V HBM 1 2 3 4 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -17 -14 A -182 3.1 2 W 40 75 RthJL 24 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4455-HF (KO4455-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ -30 ID=-250μA, VGS=0V VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±20V ±1 VDS=0V, VGS=±25V ±10 VDS=VGS, ID=-250uA Forward Transconductance RDS(On) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=-20V, ID=-15A -1.5 -2.6 9 VGS=-10V, ID=-15A 7.2 VGS=-6V, ID=-10A 9.5 VDS=-5V, ID=-15A 48 424 VGS=0V, VDS=0V, f=1MHz 2.1 VGS=-10V, VDS=-15V, ID=-15A 16 Turn-On Rise Time tr Turn-Off DelayTime td(off) Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD VGS=-10V, VDS=-15V, RL=1Ω, RGEN=3Ω Marking 2 4455 KC**** F www.kexin.com.cn Ω 76 nC 12.5 ns 49 109 IF=-15A, dI/dt=100A/us 22.3 IS=-1A,VGS=0V Note :The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking 600 9 12.5 Body Diode Reverse Recovery Charge mΩ pF 6.4 54 Qgd trr V S 574 td(on) Body Diode Reverse Recovery Time uA 2823 3400 VGS=0V, VDS=-15V, f=1MHz Gate Drain Charge tf uA 6.2 TJ=125℃ Turn-On DelayTime Turn-Off Fall Time Unit V VGS=-20V, ID=-15A Static Drain-Source On-Resistance Max 32 8.8 nC -4.2 A -1 V MOSFET SMD Type P-Channel MOSFET AO4455-HF (KO4455-HF) ■ Typical Characterisitics 50 VDS=-5V -4V -10V 40 40 -6V 125°C 30 30 -ID(A) -ID (A) 50 -4.5V 20 -3.5V 10 25°C 20 10 VGS=-3V 0 0 0 1 2 3 4 5 2 3 3.5 4 4.5 5 1.7 8 Normalized On-Resistance RDS(ON) (mΩ Ω) 10 VGS=-6V VGS=-10V 6 VGS=-20V 1.6 VGS=-20V ID = -15A 1.5 VGS=-10V ID = -15A 1.4 1.3 1.2 VGS=-6V ID = -10A 1.1 1.0 0.9 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 1.0E+01 ID=-15A 14 1.0E+00 125°C 1.0E-01 12 10 -IS (A) RDS(ON) (mΩ Ω) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 8 1.0E-02 1.0E-03 1.0E-04 6 4 4 8 25°C 1.0E-05 25°C 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4455-HF (KO4455-HF) ■ Typical Characterisitics 4000 10 6 4 2 2500 2000 1500 500 10 20 30 40 50 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 RDS(ON) limited 10µs Power (W) 1ms 10ms 0.1s 1s 10s TJ(Max)=150°C TA=25°C 10 1 30 TJ(Max)=150°C TA=25°C 100 10 DC 1 0.0 0.1 25 1000 100µs 1.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 10.0 -ID (Amps) 0 60 1000.0 Zθ JA Normalized Transient Thermal Resistance Crss 0 0 0.1 Coss 1000 0 100.0 Ciss 3000 Capacitance (pF) -VGS (Volts) 3500 VDS=-15V ID=-15A 8 1 10 . -VDS (Volts) Figure 9: Maximum Forward Biased Safe 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 -12.8 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 4 0.0001 www.kexin.com.cn 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000