Formosa MS Chip Silicon Rectifier HFM101-L THRU HFM107-L Ultra fast recovery type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 0.181(4.6) 0.165(4.2) Low leakage current. 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 5.0 uA 150 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG V RRM *1 V RMS *2 (V) (V) VR *3 VF *4 (V) (V) 1.0 HFM101-L H11 50 35 50 HFM102-L H12 100 70 100 HFM103-L H13 200 140 200 HFM104-L H14 400 280 400 HFM105-L H15 600 420 600 HFM106-L H16 800 560 800 HFM107-L H17 1000 700 1000 T RR *5 (nS) uA o 32 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. C / w 20 -55 pF +150 (o C) *1 Repetitive peak reverse voltage *2 RMS voltage -55 to +150 *3 Continuous reverse voltage *4 Maximum forward voltage 1.7 75 C Operating temperature 50 1.3 o *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM101-L THRU HFM107-L) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS L 7FM 10 H 4-L L~ 5FM 10 H 1-L 1.0 HF M1 0 HF M1 0 .1 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWARD SURGE CURRENT,(A) .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 30 24 18 Sine Wave 12 JEDEC method 6 1 5 (+) 1W NONINDUCTIVE 8.3ms Single Half Tj=25 C 0 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) ~H FM 10 3-L AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 120 100 80 60 40 20 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100