AMIS-30660 High Speed CAN Transceiver Data Sheet 1.0 Key Features • No disturbance of the bus lines with an unpowered node • Transmit data (TXD) dominant time-out function • Thermal protection • Bus pins protected against transients in an automotive environment • Power down mode in which the transmitter is disabled • Input levels compatible with 3.3V devices • Short-circuit proof to supply voltage & ground • Fully compatible with the “ISO 11898-2” standard • Certified “Authentication on CAN Transceiver Conformance (d1.1)” • High speed (up to 1 Mbaud) • Ideally suited for 12V and 24V industrial and automotive applications • Low Electromagnetic Emission (EME) common-modechoke is no longer required • Differential receiver with wide common-mode range for high Electro Magnetic Susceptibility (EMS) (+/- 35V) 2.0 General Description controller. Due to the wide common mode voltage range of the receiver inputs, the AMIS-30660 is able to reach outstanding levels of electromagnetic susceptibility. Similarly, extremely low electromagnetic emission is achieved by the excellent matching of the output signals. The AMIS-30660 CAN transceiver is the interface between a Controller Area Network (CAN) protocol controller and the physical bus and may be used in both 12V and 24V systems. The transceiver provides differential transmit capability to the bus and differential receive capability to the CAN 3.0 Important Characteristics Symbol VCANH VCANL Vi(dif)(bus_dom) Tpd(rec-dom) & Tpd(dom-rec) CM-range VCM-peak VCM-step Parameter DC voltage at pin CANH DC voltage at pin CANL Differential bus output voltage Propagation delay TxD to RxD Conditions 0<VCC<5.25 V; no time limit 0<VCC<5.25 V; no time limit Dominant 42.5 Ω <RLT<60 Ω See Fig. 7 Min -45* -45* 1.5 70 Max +45* +45* 3 245 Unit V V V ns Input common-mode range for comparator Common-mode peak Common-mode step Guaranteed differential receiver threshold and leakage current -35 See Fig. 8 & Fig. 9 (Note) -500 See Fig. 8 & Fig. 9 (Note) -150 +35 500 150 V mV mV Note : The parameters VCM-peak and VCM-step guarantee low electromagnetic emission. * -85V min & +60V max also possible, please contact your local sales representative for details. 4.0 Ordering Information Part N° AMIS-30660 Package SO-8 Temp. Range -40°C…125°C AMI Semiconductor www.amis.com 1 AMIS-30660 High Speed CAN Transceiver 5.0 Block Diagram Figure 1 – Block Diagram AMI Semiconductor www.amis.com 2 Data Sheet AMIS-30660 High Speed CAN Transceiver Data Sheet 6.0 Typical Application Schematic 6.1 Application schematic AMIS-30660 CLT (4.7 nF) CLT (4.7 nF) Figure 2 – Application Diagram 6.2 Typical external components Comp. RLT CLT CD AMI Semiconductor www.amis.com Function Line termination resistor Line termination capacitor Decoupling capacitor Value 60 47 100 Units Ω nF nF 3 AMIS-30660 High Speed CAN Transceiver 6.3 Pin Description 6.3.1 Pin out (top view) AMIS30660 Figure 3 – Pin configuration 6.3.2 Pin Description Nr Name 1 TXD 2 3 4 5 6 7 8 GND VCC RXD Vref CANL CANH S AMI Semiconductor www.amis.com Type Description Transmit data input; low input => dominant driver; internal pull-up current Ground Supply voltage Receive data output; dominant transmitter => low output Reference voltage output LOW-level CAN bus line (low in dom. mode) HIGH-level CAN bus line (high in dom. mode) Select input for high-speed mode or silent mode (high in silent mode); internal pull-down current 4 Data Sheet AMIS-30660 High Speed CAN Transceiver Data Sheet 7.0 Functional Description The high-speed mode is the normal operating mode and is selected by connecting pin S to ground. It is the default mode if pin S is not connected. The AMIS-30660 is the interface between the CAN protocol controller and the physical bus. It is intended for use in automotive and industrial applications requiring baud rates up to 1 Mbaud. It provides differential transmit capability to the bus and differential receiver capability to the CAN protocol controller. It is fully compatible to the “ISO 118982” standard. In the silent mode, the transmitter is disabled. All other IC functions continue to operate. The silent mode is selected by connecting pin S to VCC and can be used to prevent network communication from being blocked, due to a CAN controller which is out of control. A current-limiting circuit protects the transmitter output stage from damage caused by accidental short-circuit to either positive or negative supply voltage, although power dissipation increases during this fault condition. A ‘TXD dominant time-out’ timer circuit prevents the bus lines being driven to a permanent dominant state (blocking all network communication) if pin TXD is forced permanently LOW by a hardware and/or software application failure. The timer is triggered by a negative edge on pin TXD. If the duration of the LOW-level on pin TXD exceeds the internal timer value, the transmitter is disabled, driving the bus into a recessive state. The timer is reset by a positive edge on pin TXD. A thermal protection circuit protects the IC from damage by switching off the transmitter if the junction temperature exceeds a value of approximately 160°C. Because the transmitter dissipates most of the power, the power dissipation and temperature of the IC is reduced. All other IC functions continue to operate. The transmitter off-state resets when pin TXD goes HIGH. The thermal protection circuit is particularly needed when a bus line short-circuits. The pins CANH and CANL are protected from automotive electrical transients (according to “ISO 7637”; see Fig.4). Control pin S allows two operating modes to be selected: high-speed mode or silent mode. Table 1: Function table of the CAN transceiver; X = don’t care VCC TXD S CANH CANL BUS State 4.75 to 5.25V 4.75 to 5.25V 4.75 to 5.25V VCC<PORL (POR-level; not powered) PORL <VCC < 4.75V 0 X 1 (or floating) 0 (or floating) 1 X HIGH 0.5VCC 0.5VCC LOW 0.5VCC 0.5VCC Dominant Recessive Recessive 0 1 1 X >2V X X 0V < VCANH <VCC 0V < VCANH <VCC 0V <VCANL <VCC 0V <VCANL <VCC Recessive Recessive 1 1 AMI Semiconductor www.amis.com 5 RXD AMIS-30660 High Speed CAN Transceiver Data Sheet 8.0 Electrical Characteristics 8.1 Definitions All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means that the current is flowing into the pin. Sourcing current means that the current is flowing out of the pin. 8.2 Absolute maximum ratings Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for extended periods may effect device reliability. Table 2 : Absolute maximum ratings Symbol VCC VCANH Parameter Supply voltage DC voltage at pin CANH VCANL DC voltage at pin CANL VTXD VRXD Vref VS Vtran(CANH) Vtran(CANL) Vesd DC voltage at pin TXD DC voltage at pin RXD DC voltage at pin Vref DC voltage at pin S Transient voltage at pin CANH Transient voltage at pin CANL Electrostatic discharge voltage at all pins Static latch-up at all pins Storage temperature Ambient temperature Maximum junction temperature Latch-up Tstg Tamb Tjunc Conditions 0 < VCC < 5.25V; no time limit 0 < VCC < 5.25V; no time limit Note 1 Note 1 Note 2 Note 4 Note 3 Min -0.3 -45* Max +7 +45* Unit V V -45* +45* V -0.3 -0.3 -0.3 -0.3 -150 -150 -4000 -500 VCC+ 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 +150 +150 +4000 +500 100 +150 +125 °C -55 -40 +150 -40 V V V V V V V V mA °C °C * -85V min & +60V max also possible, please contact your local sales representative for details. Notes Note 1) Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and 3b (see Fig.4). Note 2) Standardized Human Body Model ESD pulses in accordance to MIL883 method 3015. Note 3) Static latch-up immunity: Static latch-up protection level when tested according to EIA/JESD78. Note 4) Standardized Charged Device Model ESD pulses when tested according to EOS/ESD DS5.3-1993. Thermal Characteristcs Symbol Rth(vj-a) Rth(vj-s) AMI Semiconductor www.amis.com Parameter Thermal resistance from junction to ambient in SO8 package (2 layer PCB) Thermal resistance from junction to substrate of bare die Conditions In free air In free air 6 Value 150 Unit K/W 45 K/W AMIS-30660 High Speed CAN Transceiver Data Sheet Characteristics VCC = 4.75 to 5.25 V; Tjunc = -40 to +150 °C; RLT =60Ω unless specified otherwise. Symbol Supply (pin VCC) ICC Parameter Conditions Supply current Dominant; VTXD =0V Recessive; VTXD =VCC Transmitter data input (pin TXD) VIH HIGH-level input voltage VIL LOW-level input voltage IIH HIGH-level input current IIL LOW-level input current Ci Input capacitance Mode select input (pin S) VIH HIGH-level input voltage VIL LOW-level input voltage IIH HIGH-level input current IIL LOW-level input current Receiver data output (pin RXD) VOH HIGH-level output voltage VOL LOW-level output voltage Reference voltage output (pin Vref) Vref Reference output voltage at pin Vref Vref_CM Reference output voltage at pin Vref for full CM range Bus lines (pins CANH and CANL) Vo(reces) Recessive bus voltage (CANH) at pin CANH Vo(reces) Recessive bus voltage (CANL) at pin CANL Io(reces) Recessive output current (CANH) at pin CANH Io(reces) Recessive output current (CANL) at pin CANL Vo(dom) Dominant output voltage (CANH) at pin CANH Vo(dom) Dominant output voltage (CANL) at pin CANL Vi(dif) (bus) Differential bus input voltage (VCANH - VCANL) Io(sc) (CANH) Io(sc) (CANL) Vi(dif)(th) Short-circuit output current at pin CANH Short-circuit output current at pin CANL Differential receiver threshold voltage Vihcm(dif)(th) Differential receiver threshold voltage for high common-mode Vi(dif) (hys) Differential receiver input voltage hysteresis Ri(cm) (CANH) Ri(cm) (CANL) Common mode input resistance at pin CANH Common mode input resistance at pin CANL AMI Semiconductor www.amis.com Min Type Max Unit 44 5 65 8 mA mA Output recessive Output dominant VTXD =VCC VTXD =0V Not tested 2.0 -0.3 -5 -75 - 0 -200 5 VCC + 0.3 +0.8 +5 -350 10 V V µA µA pF Silent mode High-speed mode VS = 2V VS =0.8V 2.0 -0.3 20 15 30 30 VCC + 0.3 +0.8 50 45 V V µA µA IRXD = - 10mA IRXD = 6mA 0.6 0.75 0.25 0.45 VCC V -50µA <IVref < +50µA 0.45 0.5 0.55 VCC -35V < VCANH < +35V -35V < VCANL < +35V 0.4 0.5 0.6 VCC VTXD =VCC; no load 2.0 2.5 3.0 V VTXD =VCC; no load 2.0 2.5 3.0 V -35V <VCANH< +35V; 0 V <VCC < 5.25V -35V <VCANL < +35V; 0 V <VCC < 5.25V VTXD = 0V -2.5 - +2.5 mA -2.5 - +2.5 mA 3.0 3.6 4.25 V VTXD = 0V 0. 5 1.4 1.75 V VTXD = 0V; dominant; 42.5 Ω < RLT <60 Ω VTXD =VCC; recessive; no load VCANH =0V;VTXD =0V 1.5 2.25 3.0 V -120 0 +50 mV -45 -70 -95 mA 45 70 120 mA 0.5 0.7 0.9 V 0.30 0.7 1.05 V 50 70 100 mV 15 25 37 KΩ 15 25 37 KΩ VCANL =36V; VTXD =0V -5V <VCANL < +12V; -5V <VCANH < +12V; see Fig.5 -35V <VCANL < +35V; -35V <VCANH < +35V; see Fig.5 -5V <VCANL < +12V; -5V <VCANH < +12V; see Fig.5 7 AMIS-30660 High Speed CAN Transceiver Symbol Ri(cm)(m) Ri(dif) Ci(CANH) Ci(CANL) Ci(dif) ILI(CANH) ILI(CANL) VCM-peak VCM-step Power On Reset PORL Parameter Matching between pin CANH and pin CANL common mode input resistance Differential input resistance Input capacitance at pin CANH Input capacitance at pin CANL Differential input capacitance Input leakage current at pin CANH Input leakage current at pin CANL Common-mode peak during transition from dom ➔ rec or rec ➔ dom Difference in common-mode between dom and recessive state Conditions VCANH =VCANL POR level Thermal shutdown Tj(sd) Shutdown junction temperature Timing characteristics (see Figs.6 and 7) td(TXD-BUSon) Delay TXD to bus active td(TXD-BUSoff) Delay TXD to bus inactive td(BUSon-RXD) Delay bus active to RXD td(BUSoff-RXD) Delay bus inactive to RXD tpd(rec-dom) Propagation delay TXD to RXD from recessive to dominant td(dom-rec) Propagation delay TXD to RXD from dominant to recessive Data Sheet Min -3 Type 0 Max +3 Unit % 25 VTXD =VCC; not tested 50 7.5 75 20 KΩ pF VTXD =VCC; not tested 7.5 20 pF VTXD =VCC; not tested VCC =0V; VCANH = 5V 10 3.75 170 10 250 pF µA VCC =0V; VCANL = 5V 10 170 250 µA See Fig. 8 & Fig. 9 -500 500 mV See Fig. 8 & Fig. 9 -150 150 mV CANH, CANL, Vref in tri-state below POR level 2.2 3.5 4.7 V 150 160 180 °C VS = 0V VS = 0V VS = 0V VS = 0V VS = 0V 40 30 25 65 100 85 60 55 110 110 110 110 135 230 ns ns ns ns ns VS = 0V 100 245 ns AMIS30660 Hysteresis Figure 4 – Test circuit for automotive transients AMI Semiconductor www.amis.com Figure 5 – Hysteresis of the receiver 8 AMIS-30660 High Speed CAN Transceiver AMIS30660 Figure 6 – Test circuit for timing characteristics Figure 7 – Timing diagram for AC characteristics AMIS30660 Figure 8 – Basic test set-up for electromagnetic measurement AMI Semiconductor www.amis.com 9 Data Sheet AMIS-30660 High Speed CAN Transceiver Data Sheet Figure 9 – Common-mode voltage peaks (see measurement setup Fig. 8.) If wave soldering is used the following conditions must be observed for optimal results: • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; – smaller than 1.27mm, the footprint longitudinal axis must be parallel to the transport direction of the printedcircuit board.The footprint must incorporate solder thieves at the downstream end. • For packages with leads on four sides, the footprint must be placed at a 45º angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Soldering Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical dwell time is 4 seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Typical reflow peak temperatures range from 215 to 250°C. The top-surface temperature of the packages should preferably be kept below 230 °C. Manual soldering Fix the component by first soldering two diagonallyopposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300°C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320°C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and nonwetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. AMI Semiconductor www.amis.com 10 AMIS-30660 High Speed CAN Transceiver Data Sheet Suitability of surface mount IC packages for wave and reflow soldering methods Package BGA, SQFP HLQFP, HSQFP, HSOP, HTSSOP, SMS PLCC (3) , SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Soldering Method Wave Not suitable Not suitable (2) Reflow (1) Suitable Suitable Suitable Not recommended (3)(4) Not recommended (5) Suitable Suitable Suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 3. If wave soldering is considered, then the package must be placed at a 45º angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5mm. Revision Number Version 1 Revision 1.1 Revision 1.2 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65mm. Changes on page 1 and 6 8 AMI Semiconductor www.amis.com © Copyright 2003 AMI Semiconductor – All rights reserved. Information furnished is believed to be accurate and reliable. However, AMI Semiconductor assumes no responsibility for errors or omissions in the information and for the consequences of use of such information. AMI Semiconductor reserves the right to change the information contained herein at any time without notice. This information is provided “AS IS” without warranty of any kind, either expressed or implied, including, but not limited to, the implied warranties of merchantability, fitness for a particular purpose, or non-infringement of intellectual property. All title and intellectual property rights including, without limitation, copyrights, trademarks, in and to this information and products are owned by AMI Semiconductor, and are protected by applicable laws. No license under any patent or other intellectual property of AMI Semiconductor is granted, by implication, estoppel or otherwise.